Sequence Of Phase Formation In Ni/Ai Contrasted With Ni/Si

1985 ◽  
Vol 54 ◽  
Author(s):  
E. G. Colgan ◽  
J. W. Mayer
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Intermetallic Phases ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition

ABSTRACTWe have investigated the interactions of Al/Ni, NiAl3/Ni, and Ni2Al3/Ni thin films between 350 and 500°C. Sequential layer deposition and coevaporation were used to prepare the films which were then vacuum annealed and analyzed by Rutherford backseat tering and X-ray diffraction. Initially, NiAl3 is formed, followed by the more Ni-rich phases. All four intermetallic phases were formed.

scholarly journals Scanning X-Ray Diffraction: A Technique With High Compositional Resolution for Studying Phase Formation in Co-Deposited Thin Films

1994 ◽  
Vol 343 ◽  
Author(s):  
T.I. Selinder ◽  
D.J. Miller ◽  
K.E. Gray ◽  
M.A. Beno ◽  
G.S. Knapp
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Structural Information ◽  
Metastable Phase ◽  
Ternary Systems ◽  
Composition Gradient ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analysis Technique ◽  
Position Sensitive

ABSTRACTInvestigation of the formation of new metastable phases in alloy thin films requires ways of quickly determining the crystalline structure of samples with different compositions. We report a novel technique for acquiring structural information from films intentionally grown with a composition gradient. For example, binary metal alloy films were deposited using a phase-spread sputtering method. In this way essentially the entire composition range could be grown in a single deposition. By using a narrow incident x-ray beam and a translating sample stage combined with a position sensitive x-ray detector technique, detailed information of the metastable phase diagram can be obtained rapidly. Compositional resolution of the order of ±0.2% can be achieved, and is limited by the brightness of the x-ray source. Initial results from studies of phase formation in Zr-Ta alloys will be presented. Extensions of the analysis technique to ternary systems will be discussed.

TiNi/GaAs Thin Film Structures for Gate Metallizations

2000 ◽  
Vol 648 ◽  
Author(s):  
Chichang Zhang ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Sheet Resistance ◽  
Intermetallic Phase ◽  
Intermetallic Phases ◽  
Schottky Barriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alloy Tini

AbstractShape memory alloy TiNi thin films on GaAs have been investigated. A series of TiNi compositions were electron beam deposited on GaAs initially as thin multilayers of Ti and Ni. The intermetallic phase of TiNi was formed by annealing and complete intermixing of the multilayers at 370oC. The intermetallic phases were investigated with X-ray diffraction techniques. The annealing kinetics and resistivity investigations were carried out in order to minimize the sheet resistance of the intermetallic phase. TiNi Schottky barriers on GaAs have been fabricated and their performance will be reported. Additional investigations on surface morphology using the energy dispersive spectroscopy as well as TEM investigations show the correlation between microstructure, intermetallic phase formation and sheet resistance.

Enhancement of Aurivillius Phase Formation Kinetics in SBT Thin Films using Nanoparticle Seeding

2003 ◽  
Vol 784 ◽  
Author(s):  
Yun-Mo Sung ◽  
Woo-Chul Kwak ◽  
Se-Yon Jung ◽  
Seung-Joon Hwang
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Phase Transformation ◽  
Phase Formation ◽  
X Ray Diffraction ◽  
Aurivillius Phase ◽  
X Ray ◽  
Si Substrates ◽  
Formation Kinetics ◽  
Kinetics Of

ABSTRACTPt/Ti/SiO2/Si substrates seeded by SBT nanoparticles (∼60–80 nm) were used to enhance the phase formation kinetics of Sr0.7Bi2.4Ta2O9 (SBT) thin films. The volume fractions of Aurivillius phase formation obtained through quantitative x-ray diffraction (Q-XRD) analyses showed highly enhanced kinetics in seeded SBT thin films. The Avrami exponents were determined as ∼1.4 and ∼0.9 for unseeded and seeded SBT films, respectively, which reveals different nucleation modes. By using Arrhenius–type plots the activation energy values for the phase transformation of unseeded and seeded SBT thin films were determined to be ∼264 and ∼168 kJ/mol, respectively. This gives a key reason to the enhanced kinetics in seeded films. Microstructural analyses on unseeded SBT thin films showed formation of randomly oriented needle-like crystals, while those on seeded ones showed formation of domains comprised of directionally grown worm-like crystals.

Monitoring the Phase Formation of Coevaporated Lead Halide Perovskite Thin Films by in Situ X-ray Diffraction

2014 ◽  
Vol 5 (19) ◽  
pp. 3308-3312 ◽  
Author(s):  
Paul Pistor ◽  
Juliane Borchert ◽  
Wolfgang Fränzel ◽  
René Csuk ◽  
Roland Scheer
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Halide Perovskite ◽  
Lead Halide

The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties

2002 ◽  
Vol 716 ◽  
Author(s):  
H. Kim ◽  
C. Cabral ◽  
C. Lavoie ◽  
S.M. Rossnagel
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Growth Parameters ◽  
Atomic Layer ◽  
Barrier Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition

AbstractTa films were grown by plasma-enhanced atomic layer deposition (PE-ALD) at temperatures from room temperature up to 300 °C using TaCl5 as source gas and RF plasma-produced atomic H as the reducing agent. Post-deposition ex situ chemical analyses showed that the main impurity is oxygen, incorporated during the air exposure prior to analysis with typically low Cl concentration below 1 at %. The X-ray diffraction indicates that ALD Ta films are amorphous or composed of nano-grains. The typical resistivity of ALD Ta films was 150-180 μΩ cm, which corresponds to that of β-Ta phase, at a wide range of growth parameters. The conformality of the film is 100 % up to an aspect ratio of 15:1 and 40 % for aspect ratio of 40:1. The thickness per cycle, corresponding to the growth rate, was measured by Rutherford back scattering as a function of various key growth parameters, including TaCl5 and H exposure time and growth temperature. The maximum thickness per cycle values were below 0.1 ML, probably due to the steric hindrance for TaCl5 adsorption. Bilayer structures consisting of Cu films deposited by sputtering and ALD Ta films with various thicknesses were prepared and the diffusion barrier properties of ALD Ta films were investigated by various analysis techniques consisting of X-ray diffraction, elastic light scattering, and resistance analysis. The results were compared with Ta thin films deposited by sputtering with comparable thicknesses. Also, the growth of TaN films by PE-ALD using consecutive exposures of atomic H and activated N2 is presented.

High Resolution X-Ray Microanalysis of Nb/Al Multilayer Thin Films

1997 ◽  
Vol 3 (S2) ◽  
pp. 967-968
Author(s):  
G. Lucadamo ◽  
M. Watanabe ◽  
K. Barmak ◽  
D. B. Williams
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Driving Forces ◽  
Interfacial Region ◽  
Specimen Preparation ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Growth Step ◽  
X Ray ◽  
Deposition Processes

A study of reactive phase formation in thin films requires the understanding of the thermodynamics and kinetics of the reactions. Previous investigations of phase formation in Nb/Al multilayers using calorimetry and x-ray diffraction have observed that despite the presence of rather large driving forces for phase formation, a pronounced nucleation event occurs. This behavior has been reported in other systems including Ti/Al and Ni/Al. The initial nature of the interface can affect the nucleation, therefore careful studies of the structure and composition of the initial interfacial region may explain the reason for a kinetically separated nucleation and lateral growth step preceding normal phase growth. In addition, examination of the interface may also lend insight into the effects of different deposition processes and can provide evidence for the formation of solid solutions or compounds that can lower driving forces available for phase formation. Finally, the cross-sectional multilayer sample provides a means of characterizing spatial resolution and isolating specimen preparation artifacts.

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