Evaporated Polycrystalline Germanium for Near Infrared Photodetection

1998 ◽  
Vol 536 ◽  
Author(s):  
L. Colace ◽  
G. Masini ◽  
F. Galluzzi ◽  
G. Assanto
Keyword(s):  
Response Time ◽  
Silicon Substrate ◽  
Near Infrared ◽  
Low Cost ◽  
Proper Choice ◽  
Detector Array ◽  
Infrared Photodetectors ◽  
Linear Detector ◽  
Infrared Photodetection ◽  
Deposition Conditions

AbstractWe present low cost near infrared photodetectors based on polycrystalline Ge film thermally evaporated on a silicon substrate. We demonstrate that, by proper choice of deposition conditions and device configuration, a responsivity of 16mA/W and a response time of a few nanoseconds can be achieved at the wavelength of 1.3micron. The device can operate up to 1.55micron. We also describe the fabrication and the operation of a 16 pixel linear detector array, with pitch of about 100 micron.

scholarly journals Ultra-low-cost near-infrared photodetectors on silicon

2015 ◽  
Author(s):  
M. A. Nazirzadeh ◽  
Fatih B. Atar ◽  
B. Berkan Turgut ◽  
Ali K. Okyay
Keyword(s):  
Near Infrared ◽  
Low Cost ◽  
Infrared Photodetectors

scholarly journals Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Mohammad Amin Nazirzadeh ◽  
Fatih Bilge Atar ◽  
Berk Berkan Turgut ◽  
Ali Kemal Okyay
Keyword(s):  
Near Infrared ◽  
Low Cost ◽  
Broad Band ◽  
Plasmonic Nanoantennas ◽  
Infrared Photodetection

scholarly journals Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 750
Author(s):  
Emma P. Mukhokosi ◽  
Gollakota V.S. Manohar ◽  
Tadaaki Nagao ◽  
Saluru B. Krupanidhi ◽  
Karuna K. Nanda
Keyword(s):  
Response Time ◽  
Band Gap ◽  
Near Infrared ◽  
Response Times ◽  
Hole Mobility ◽  
Infrared Photodetectors ◽  
Two Dimensional ◽  
Alternative Materials ◽  
Recovery Times ◽  
Recent Developments

While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 104 A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe2 and MoS2 materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.

scholarly journals Fast and Low-Cost Synthesis of MoS2 Nanostructures on Paper Substrates for Near-Infrared Photodetectors

2021 ◽  
Vol 11 (3) ◽  
pp. 1234
Author(s):  
Neusmar J. A. Cordeiro ◽  
Cristina Gaspar ◽  
Maria J. de Oliveira ◽  
Daniela Nunes ◽  
Pedro Barquinha ◽  
...  
Keyword(s):  
Near Infrared ◽  
Low Cost ◽  
Transition Metal Dichalcogenides ◽  
Synthesis Method ◽  
Infrared Photodetectors ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Synthesis Time ◽  
Metal Dichalcogenides ◽  
Paper Substrates

Recent advances in the production and development of two-dimensional transition metal dichalcogenides (2D TMDs) allow applications of these materials, with a structure similar to that of graphene, in a series of devices as promising technologies for optoelectronic applications. In this work, molybdenum disulfide (MoS2) nanostructures were grown directly on paper substrates through a microwave-assisted hydrothermal synthesis. The synthesized samples were subjected to morphological, structural, and optical analysis, using techniques such as scanning electron microscopy (SEM), X-ray diffraction (XRD), and Raman. The variation of synthesis parameters, as temperature and synthesis time, allowed the manipulation of these nanostructures during the growth process, with alteration of the metallic (1T) and semiconductor (2H) phases. By using this synthesis method, two-dimensional MoS2 nanostructures were directly grown on paper substrates. The MoS2 nanostructures were used as the active layer, to produce low-cost near-infrared photodetectors. The set of results indicates that the interdigital MoS2 photodetector with the best characteristics (responsivity of 290 mA/W, detectivity of 1.8 × 109 Jones and external quantum efficiency of 37%) was obtained using photoactive MoS2 nanosheets synthesized at 200 °C for 120 min.

scholarly journals Feasibility of Using VIS/NIR Spectroscopy and Multivariate Analysis for Pesticide Residue Detection in Tomatoes

Processes ◽  
2021 ◽  
Vol 9 (2) ◽  
pp. 196
Author(s):  
Araz Soltani Nazarloo ◽  
Vali Rasooli Sharabiani ◽  
Yousef Abbaspour Gilandeh ◽  
Ebrahim Taghinezhad ◽  
Mariusz Szymanek ◽  
...  
Keyword(s):  
Near Infrared ◽  
Cross Validation ◽  
Low Cost ◽  
Moving Average ◽  
Nir Spectroscopy ◽  
Control Treatment ◽  
Residue Detection ◽  
Non Destructive ◽  
Reflective Spectroscopy

The purpose of this work was to investigate the detection of the pesticide residual (profenofos) in tomatoes by using visible/near-infrared spectroscopy. Therefore, the experiments were performed on 180 tomato samples with different percentages of profenofos pesticide (higher and lower values than the maximum residual limit (MRL)) as compared to the control (no pesticide). VIS/near infrared (NIR) spectral data from pesticide solution and non-pesticide tomato samples (used as control treatment) impregnated with different concentrations of pesticide in the range of 400 to 1050 nm were recorded by a spectrometer. For classification of tomatoes with pesticide content at lower and higher levels of MRL as healthy and unhealthy samples, we used different spectral pre-processing methods with partial least squares discriminant analysis (PLS-DA) models. The Smoothing Moving Average pre-processing method with the standard error of cross validation (SECV) = 4.2767 was selected as the best model for this study. In addition, in the calibration and prediction sets, the percentages of total correctly classified samples were 90 and 91.66%, respectively. Therefore, it can be concluded that reflective spectroscopy (VIS/NIR) can be used as a non-destructive, low-cost, and rapid technique to control the health of tomatoes impregnated with profenofos pesticide.

scholarly journals 2D MoS2 Encapsulated Silicon Nanopillar Array with High-Performance Light Trapping Obtained by Direct CVD Process

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 267
Author(s):  
Minyu Bai ◽  
Zhuoman Wang ◽  
Jijie Zhao ◽  
Shuai Wen ◽  
Peiru Zhang ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
High Performance ◽  
Low Cost ◽  
Light Trapping ◽  
Incident Light ◽  
Single Layer ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Planar Silicon ◽  
Shortwave Infrared

Weak absorption remains a vital factor that limits the application of two-dimensional (2D) materials due to the atomic thickness of those materials. In this work, a direct chemical vapor deposition (CVD) process was applied to achieve 2D MoS2 encapsulation onto the silicon nanopillar array substrate (NPAS). Single-layer 2D MoS2 monocrystal sheets were obtained, and the percentage of the encapsulated surface of NPAS was up to 80%. The reflection and transmittance of incident light of our 2D MoS2-encapsulated silicon substrate within visible to shortwave infrared were significantly reduced compared with the counterpart planar silicon substrate, leading to effective light trapping in NPAS. The proposed method provides a method of conformal deposition upon NPAS that combines the advantages of both 2D MoS2 and its substrate. Furthermore, the method is feasible and low-cost, providing a promising process for high-performance optoelectronic device development.

High-performance near-infrared photodetectors based on C3N quantum dots integrated with single-crystal graphene

2021 ◽  
Author(s):  
Yun Zhao ◽  
Xiaoqiang Feng ◽  
Menghan Zhao ◽  
Xiaohu Zheng ◽  
Zhiduo Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Single Crystal ◽  
High Performance ◽  
Near Infrared ◽  
Fast Response ◽  
Local Electric Field ◽  
Infrared Photodetectors ◽  
Photocurrent Response

Employing C3N QD-integrated single-crystal graphene, photodetectors exhibited a distinct photocurrent response at 1550 nm. The photocurrent map revealed that the fast response derive from C3N QDs that enhanced the local electric field near graphene.

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