Enhancement in Efficiency and Stability of Oxide-Free Blue Emission from Porous Silicon by Surface Passivation

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Mizuno ◽  
N. Koshida

AbstractThe establishment of tuning techniques of visible emission from porous silicon (PS) is very important from both physical and technological viewpoints. As previously reported that the photoluminescence (PL) spectra of PS can continuously be controlled from red to blue simply by postanodization illumination method without any growth of the surface oxide. Details of this oxide-free blue emission have been studied in terms of the PL decay dynamics and surface chemistry. We report here that post-preparation exposure of PS to hydrogen gas is very useful for improvement in efficiency and stability of blue PL. Based on this technique, it has become possible to get blue electroluminescence even at low bias voltages.

1996 ◽  
Vol 452 ◽  
Author(s):  
Gildardo R. Delgado ◽  
Howard W.H. Lee ◽  
Susan M. Kauzlarich ◽  
Richard A. Bley

AbstractWe studied the optical and electronic properties of silicon nanocrystals derived from two distinct fabrication procedures. One technique uses a controlled chemical reaction. In the other case, silicon nanocrystals are produced by ultrasonic fracturing of porous silicon layers. We report on the photoluminescence, photoluminescence excitation, and absorption spectroscopy of various size distributions derived from these techniques. We compare the different optical properties of silicon nanocrystals made this way and contrast them with that observed in porous silicon. Our results emphasize the dominant role of surface states in these systems as manifested by the different surface passivation layers present in these different fabrication techniques. Experimental absorption measurements are compared to theoretical calculations with good agreement. Our results provide compelling evidence for quantum confinement in both types of Si nanocrystals. Our results also indicate that the blue emission from very small Si nanocrystals corresponds to the bandedge emission, while the red emission arises from traps.


2012 ◽  
Vol 1416 ◽  
Author(s):  
Adi Tzur-Balter ◽  
Naama Massad-Ivanir ◽  
Ester Segal

ABSTRACTIn this work, nanostructured porous silicon (PSi) hosts, synthesized by electrochemical etching of Si, are designed to carry and release the anti cancer drug, mitoxantrone dihydrochloride (MTX). We study the effect of surface chemistry of the Si scaffold on its properties as a drug carrier. The freshly-etched PSi is modified by surface alkylation using thermal hydrosilylation with 1-dodecene. Fourier-transform infrared spectroscopy and nitrogen adsorption-desorption measurements are employed to characterize the PSi carriers after chemical modification. Both, drug loading efficiency and release kinetics are found to be significantly affected by surface chemistry of the PSi. In vitro cytotoxicity studies on human breast carcinoma (MDA-MB-231) cells show that the MTX released from the PSi hosts maintains its cytotoxic functionality.


2000 ◽  
Vol 182 (1) ◽  
pp. 547-553 ◽  
Author(s):  
A.M. Tinsley-Bown ◽  
L.T. Canham ◽  
M. Hollings ◽  
M.H. Anderson ◽  
C.L. Reeves ◽  
...  

2014 ◽  
Vol 1052 ◽  
pp. 181-187
Author(s):  
Yan Li Ding ◽  
Yue Zhao ◽  
Yue Feng ◽  
Xiao Yan Liang ◽  
Lin Jun Wang ◽  
...  

Photoluminescence of porous silicon (PS) prepared by different etched time was studied. The photoluminescence might originate from the recombination of carriers and surface states, which was proved by FTIR, Raman spectroscopy and SEM. Furthermore, the hydrogen-related groups on the PS surface could eliminate the surface states for the blue emission, but the quantities of surface states for the green emission were depended on the uncovered area on the PS surface. Moreover, the shape of photoconductivity curve was depended on the quantities of the surface states, which also was related to the uncovered area on the PS surface. In addition, the results of the microwave-detected photoconductivity decay measurement indicated thatthe defects on the PS surface increased with the increase of the etched time, which would be related to the increase of the depth of pores.


1994 ◽  
Vol 49 (11) ◽  
pp. 7821-7824 ◽  
Author(s):  
L. Tsybeskov ◽  
Ju. V. Vandyshev ◽  
P. M. Fauchet

2005 ◽  
Vol 40 (18) ◽  
pp. 5071-5073 ◽  
Author(s):  
Yue Zhao ◽  
Dongsheng Li ◽  
Deren Yang ◽  
Minghua Jiang
Keyword(s):  

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