Computer Simulation of Channeling Profile Analysis of Implantation Damage

1998 ◽  
Vol 532 ◽  
Author(s):  
Matthias Posselt
Keyword(s):  
Experimental Data ◽  
Computer Simulation ◽  
Depth Profile ◽  
Profile Analysis ◽  
Binary Collision ◽  
Comparison Of Results ◽  
Implantation Damage ◽  
Good Agreement

ABSTRACTChanneling profile analysis is simulated using the dynamic binary collision code Crystal- TRIM. A good agreement between theoretical and experimental data is found for silicon targets which were predamaged by Si+ ions of different energies and analyzed by 140 keV B+ ions. For each example the depth profile of the defects relevant for the dechanneling of the analyzing ions is given. An estimate of the annealing of such defects is obtained by comparison of results for as-implanted and annealed samples.

Study of point defects in alkaline-earth sulfides

1988 ◽  
Vol 3 (6) ◽  
pp. 1362-1366 ◽  
Author(s):  
Ravindra Pandey ◽  
A. Barry Kunz ◽  
John M. Vail
Keyword(s):  
Experimental Data ◽  
Computer Simulation ◽  
Point Defects ◽  
Simulation Study ◽  
Alkaline Earth ◽  
Computer Simulation Study ◽  
Vacancy Migration ◽  
Absorption Energy ◽  
Good Agreement

The results of a computer simulation study of point defects including vacancy, interstitial, and F+ center in alkaline-earth sulfides are presented. The study is based on ICECAP/HADES simulation procedures and uses empirical interionic potentials obtained from the analysis of macroscopic data for these materials. The results predict the dominance of Schottky disorder and suggest that vacancy migration predominates in alkaline-earth sulfides. Furthermore, the calculated F+ center absorption energy is in good agreement with the experimental data deduced from the optical stimulated studies in these materials.

scholarly journals TO THE PROBLEM OF DETERMINING THE COEFFICIENT OF THERMAL EXPANSION OF MATERIALS

2020 ◽  
pp. 284-292
Author(s):  
Денис Васильевич Пьянзин ◽  
Николай Александрович Панькин ◽  
Александр Николаевич Чалдышкин ◽  
Николай Иванович Чистяков
Keyword(s):  
Experimental Data ◽  
Experimental Study ◽  
Computer Simulation ◽  
Thermal Expansion ◽  
Software Package ◽  
Coefficient Of Thermal Expansion ◽  
Metallic Materials ◽  
Ansys Software ◽  
Simulation Results ◽  
Good Agreement

Проведено экспериментальное исследование и компьютерное моделирование в программном комплексе ANSYS термического воздействия на металлический материал. Отмечается уменьшение значений коэффициента теплового расширения при увеличении скорости нагрева образца. Показано, что данное поведение обусловлено наличием градиента температур между его центральной и поверхностью частями. Отмечается хорошее согласие результатов компьютерного моделирования с соответствующими экспериментальными данными. Значения коэффициента теплового расширения близки к истинным, которые были определены при малых скоростях нагрева/охлаждения или при длительной выдержке образца при конечной и начальной температурах. Результаты моделирования в ANSYS могут быть использованы при интерпретации и прогнозировании тепловых свойств металлических материалов. An experimental study and computer modeling in the ANSYS software package of the thermal effect on a metal material was carried out. A decrease in the values of the coefficient of the thermal expansion is noted with an increase in the heating rate of the sample. It is shown that this behavior is due to the presence of the temperature gradient between its central and surface parts. Good agreement of the results of computer simulation with the corresponding experimental data is found. The values of the coefficient of thermal expansion are close to true ones determined at low heating / cooling rates or with long exposure of the sample at the final and initial temperatures. The simulation results in ANSYS can be used to interpret and predict thermal properties of metallic materials.

Dynamic Simulation of Ultra-Shallow Implantation Profiles in Single-Crystalline Silicon

1995 ◽  
Vol 389 ◽  
Author(s):  
Matthias Posselt
Keyword(s):  
Experimental Data ◽  
Damage Accumulation ◽  
Crystalline Silicon ◽  
Critical Value ◽  
Binary Collision ◽  
Single Crystalline Silicon ◽  
Depth Profiles ◽  
High Doses ◽  
Different Doses ◽  
Good Agreement

ABSTRACTThe binary collision code Crystal-TRIM is applied to simulate 15 keV BF+2 and As+ implantations into channeling and "random" directions, at different doses. The buildup of radiation damage is described by assuming statistical creation of local amorphous regions and formation of amorphous zones if the density and/or size of the local amorphous regions exceeds a critical value. Damage accumulation during ion bombardment causes enhanced dechanneling and, therefore, the alteration of the shape of range and damage profiles. The depth profiles calculated by Crystal-TRIM show a good agreement with experimental data. The thickness of the amorphous layers formed at high doses is also in accordance with measurements.

scholarly journals The Spectral Features of Polyatomic Molecules Multiphoton Excitation in a Strong IR-Laser Field

1992 ◽  
Vol 12 (3-4) ◽  
pp. 147-172 ◽  
Author(s):  
S. S. Alimpiev ◽  
B. G. Sartakov
Keyword(s):  
Experimental Data ◽  
Computer Simulation ◽  
High Pressure ◽  
Laser Field ◽  
Polyatomic Molecules ◽  
Spectral Features ◽  
Multiphoton Excitation ◽  
Excitation Spectra ◽  
Ir Laser ◽  
Good Agreement

The experimental data on multiphoton excitation of polyatomic molecules in strong fields of high pressure continuously tunable CO2 lasers are presented. The program package for computer simulation of multiphoton excitation spectra and excitation dynamics is developed. Good agreement between computer simulation and experimental data is observed.

RECONSTRUCTION OF PRESSURE–COMPOSITION–TEMPERATURE CURVES OFRNi5(R = La, Pr, Nd, and Sm) HYDROGEN STORAGE MATERIALS BY COMPUTER SIMULATION

2009 ◽  
Vol 08 (04n05) ◽  
pp. 409-413
Author(s):  
VASILEIOS TSEROLAS ◽  
MASAHIKO KATAGIRI ◽  
HIDEHIRO ONODERA ◽  
HIROSHI OGAWA
Keyword(s):  
Experimental Data ◽  
Computer Simulation ◽  
Simple Model ◽  
Hydrogen Storage ◽  
Electrochemical Performance ◽  
Plateau Pressure ◽  
Hydrogen Storage Materials ◽  
Hydrogen Atoms ◽  
Storage Materials ◽  
Good Agreement

RNi5-type metal hydride materials have been simulated by using a simple model. These materials have been thoroughly studied with respect to their physical and electrochemical performance. Examples of simulated P–C–T curves are drawn. The simulations demonstrate good agreement with the experimental data reported for various RNi5-type hydrogen storage materials. As expected, the plateau pressure increases with increasing temperatures. It also becomes more difficult to insert hydrogen atoms at higher temperatures, which is generally accepted to occur. Finally, limitations of the model are discussed and possible solutions to overcome these limitations are proposed.

Energy Levels and Electromagnetic Transition of 90-94mo Nuclei Using Ibm-1

2020 ◽  
pp. 149-152
Keyword(s):  
Experimental Data ◽  
Transition Probability ◽  
Energy Levels ◽  
Dynamical Symmetry ◽  
Interacting Boson Model ◽  
Excitation Energies ◽  
Electromagnetic Transition ◽  
Boson Model ◽  
Energy States ◽  
Good Agreement

The energy states for the J , b , ɤ bands and electromagnetic transitions B (E2) values for even – even molybdenum 90 – 94 Mo nuclei are calculated in the present work of "the interacting boson model (IBM-1)" . The parameters of the equation of IBM-1 Hamiltonian are determined which yield the best excellent suit the experimental energy states . The positive parity of energy states are obtained by using IBS1. for program for even 90 – 94 Mo isotopes with bosons number 5 , 4 and 5 respectively. The" reduced transition probability B(E2)" of these neuclei are calculated and compared with the experimental data . The ratio of the excitation energies of the 41+ to 21+ states ( R4/2) are also calculated . The calculated and experimental (R4/2) values showed that the 90 – 94 Mo nuclei have the vibrational dynamical symmetry U(5). Good agreement was found from comparison between the calculated energy states and electric quadruple probabilities B(E2) transition of the 90–94Mo isotopes with the experimental data .

Predicting the Effect of Tire Tread Pattern Design on Thick Film Wet Traction

1977 ◽  
Vol 5 (1) ◽  
pp. 6-28 ◽  
Author(s):  
A. L. Browne
Keyword(s):  
Experimental Data ◽  
Network Design ◽  
Thick Film ◽  
Digital Computer ◽  
Analytical Tool ◽  
Design Practice ◽  
Pattern Design ◽  
Performance Results ◽  
Good Agreement

Abstract An analytical tool is presented for the prediction of the effects of changes in tread pattern design on thick film wet traction performance. Results are reported for studies in which the analysis, implemented on a digital computer, was used to determine the effect of different tread geometry features, among these being the number, width, and lateral spacing of longitudinal grooves and the angle of zigzags in longitudinal grooves, on thick film wet traction. These results are shown to be in good agreement with experimental data appearing in the literature and are used to formulate guidelines for tread groove network design practice.

A New Condition of Formation and Stablity of All Crystalline Systems in a Good Agreement with Experimental Data

2015 ◽  
Vol 11 (3) ◽  
pp. 3224-3228
Author(s):  
Tarek El-Ashram
Keyword(s):  
Experimental Data ◽  
Brillouin Zone ◽  
Electron Concentration ◽  
Free Electron ◽  
Lattice Point ◽  
Valence Electron ◽  
Fermi Gas ◽  
Valence Electron Concentration ◽  
Fermi Sphere ◽  
Good Agreement

In this paper we derived a new condition of formation and stability of all crystalline systems and we checked its validity andit is found to be in a good agreement with experimental data. This condition is derived directly from the quantum conditionson the free electron Fermi gas inside the crystal. The new condition relates both the volume of Fermi sphere VF andvolume of Brillouin zone VB by the valence electron concentration VEC as ;𝑽𝑭𝑽𝑩= 𝒏𝑽𝑬𝑪𝟐for all crystalline systems (wheren is the number of atoms per lattice point).

Virus Removal by Filtration

1982 ◽  
Vol 14 (4-5) ◽  
pp. 253-256
Author(s):  
N Sriramula ◽  
M Chaudhuri
Keyword(s):  
Experimental Data ◽  
Escherichia Coli ◽  
Cationic Polyelectrolyte ◽  
Electrokinetic Phenomena ◽  
Virus Removal ◽  
Bacterial Virus ◽  
Gravity Settling ◽  
And Diffusion ◽  
Model Virus ◽  
Good Agreement

An investigation was undertaken on the removal of a model virus, bacterial virus MS2 against Escherichia coli, by sand filtration using untreated, and alum or cationic polyelectrolyte treated media, and uncoagulated as well as alum coagulated influent. Data on discrete virus removal were satisfactorily accounted for by electrokinetic phenomena and diffusion. For virus in association with turbidity, filter coefficients computed from experimental data were in good agreement with those predicted by mechanical straining and gravity settling which were the dominant mechanisms for removal of the turbidity particles to which the viruses attached.

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

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