Low Temperature Gate Dielectrics for Tft Applications

1985 ◽  
Vol 53 ◽  
Author(s):  
B L Jones ◽  
D B Meakin
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Gate Dielectrics ◽  
Stability Parameters ◽  
Yield Information ◽  
Mis Capacitor

ABSTRACTA series of low temperature CVD films of oxide (VAPOX and LTO) and nitride (PECVD ∝-SixNy:H) have been compared and optimised for use as gate dielectrics for TFT on insulator technology. The method of investigation involves the fabrication of MIS capacitor structures using the deposited insulator on single crystal n+ Si. I-V and C-V analyses yield information of the interested electronic stability parameters which are compared for the various insulators.

ФОРМИРОВАНИЕ ПЕРЕХОДНОГО СЛОЯ ALN НА ТЕМПЛЕЙТАХ 3С-SIC/SI(111) МЕТОДОМ АММИАЧНОЙ МОЛЕКУЛЯРНО-ЛУЧЕВОЙ ЭПИТАКСИИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 148-153
Author(s):  
С.Д. Федотов ◽  
А.В. Бабаев ◽  
В.Н. Стаценко ◽  
К.А. Царик ◽  
В.К. Неволин
Keyword(s):  
Crystal Structure ◽  
Growth Rate ◽  
Low Temperature ◽  
Surface Morphology ◽  
Single Crystal ◽  
Root Mean Square Roughness ◽  
Rate Variation ◽  
Mean Square ◽  
Nucleation Layer ◽  
Low Temperature Epitaxy

Представлены результаты изучения морфологии поверхности и структуры слоев AlN, сформированных аммиачной МЛЭ на темплейтах 3C-SiC/Si(111) on-axis- и 4° off-axis-разориентации. Опробован технологический режим низкотемпературной эпитаксии зародышевого слоя AlN на поверхности 3C-SiC(111). Среднеквадратичная шероховатость поверхности (5 х 5 мкм) слоев AlN толщиной 150 ± 50 нм составила 2,5-3,5 нм на темплейтах 3C-SiC/Si(111) on-axis и 3,3-3,5 нм на 4° off-axis. Показано уменьшение шероховатости смачивающего слоя AlN при изменении скорости роста. Получены монокристаллические слои AlN(0002) со значениями FWHM (ω-геометрия) 1,4-1,6°. The paper presents the surface morphology and crystal structure of AlN layers formed by ammonia MBE on 3C-SiC/Si(111) on-axis and 4° off-axis disorientation. It offers the technological approach of low-temperature epitaxy of the AlN nucleation layer on the 3C-SiC (111) surface. Root mean square roughness (5 х 5 |xm) of AlN layers with thickness of 150 ± 50 nm was 2,5-3,5 nm onto on-axis templates and 3.3-3.5 nm onto 4° off-axis. It appears that the RMS roughness of the AlN surface is changing with the growth rate variation. Single-crystal AlN(0002) layers with FWHM values (ω-geometry) of 1.4-1.6° have been obtained.

Low temperature acoustic characterization of PMN single crystal

2017 ◽  
Vol 122 (8) ◽  
pp. 084103 ◽  
Author(s):  
E. Smirnova ◽  
A. Sotnikov ◽  
S. Ktitorov ◽  
H. Schmidt
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Acoustic Characterization

Spin-crossover iron(II) long-chain complex with slow spin equilibrium at low temperature

2021 ◽  
Author(s):  
Qi Zhao ◽  
Jin-Peng Xue ◽  
Zhi-Kun Liu ◽  
Zi-Shuo Yao ◽  
Jun Tao
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Spin Crossover ◽  
Chain Complex ◽  
Mononuclear Complex ◽  
X Ray ◽  
Alkyl Chains ◽  
Long Chain

A mononuclear complex with long alkyl chains, [FeII(H2Bpz2)2(C9bpy)] (1; H2Bpz2 = dihydrobis(1-pyrazolyl)borate, C9bpy = 4,4'-dinonyl-2,2'-bipyridine), was synthesized. Single-crystal X-ray crystallographic studies revealed that - and - forms of the complex...

Low-temperature magnetic and transport properties of single-crystal CeCoGe

2008 ◽  
Vol 20 (46) ◽  
pp. 465223 ◽  
Author(s):  
M ElMassalami ◽  
R E Rapp ◽  
J P Sinnecker ◽  
A V Andreev ◽  
J Prokleska
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Transport Properties

Low temperature-high pressure grown thin gate dielectrics for MOS applications

1999 ◽  
Vol 48 (1-4) ◽  
pp. 223-226
Author(s):  
V. Ramgopal Rao ◽  
W. Hansch ◽  
S. Mahapatra ◽  
D.K. Sharma ◽  
J. Vasi ◽  
...  
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Gate Dielectrics

Low-temperature magnetization and flux creep studies of a DyBa2Cu3O7 single crystal with a vibrating reed

1995 ◽  
Vol 246 (1-2) ◽  
pp. 123-132 ◽  
Author(s):  
K. Rogacki ◽  
P. Esquinazi ◽  
E. Faulhaber ◽  
W. Sadowski
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Flux Creep ◽  
Vibrating Reed

Low-Temperature Physical Properties of Polycrystal and Single Crystal ofCePt2Sn2

1996 ◽  
Vol 65 (5) ◽  
pp. 1186-1188 ◽  
Author(s):  
Naoya Takeda ◽  
Masayasu Ishikawa ◽  
Toshiro Takabatake ◽  
Toru Shigeoka
Keyword(s):  
Low Temperature ◽  
Physical Properties ◽  
Single Crystal
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