Island-Size Distributions for Submonolayer Epitaxy: Rate Equations and Beyond

1998 ◽  
Vol 528 ◽  
Author(s):  
D.D. Vvedensky ◽  
R.E. Caflisch ◽  
M.F. Gyure ◽  
B. Merriman ◽  
S. Osher ◽  
...  

AbstractThe scanning tunnelling microscope has revolutionized the quantitative analysis of epitaxial phenomena. This, in turn, has spawned a huge theoretical effort aimed at analyzing various aspects of the morphology of growing surfaces. One of the most important general approaches to have emerged from this effort is based on the application of scaling concepts to epitaxial island-size distributions in the regime of submonolayer coverage prior to coalescence. We first discuss the analytical basis for scaling solutions to rate equations. In the limit of irreversible aggregation, a solution is obtained in terms of the capture numbers which agrees with previous work. For reversible aggregation, we identify a new quantity that may be regarded as a continuous analogue of a critical island size. We then examine the influence of spatial correlations by introducing a method for modeling epitaxial phenomena in terms of the motion of island boundaries, which is implemented numerically using the level set method. This island dynamics model is continuous in the lateral directions, but retains atomic scale discreteness in the growth direction. Several choices for the island boundary velocity are discussed and computations of the island dynamics model using the level set method are presented.

1995 ◽  
Vol 399 ◽  
Author(s):  
P. E. Quesenberry ◽  
P. N. First

ABSTRACTIsland size distributions have been derived from scanning tunneling microscope (STM) images of Ni deposited on cleaved GaAs(110) at room temperature and above. For submonolayer coverages, this system forms 3-dimensional (3-D) reacted islands with the degree of reaction dependent upon the growth temperature. As has been found for other systems, the average island size (sαυ) increases with temperature. The high temperature data (∼ 150° C) shows two distinct island types, each with substantially different average size. The island size distributions have maxima at the smallest island sizes. For different coverages, plots of the area-normalized island size distributions versus the scaled variable s/sαυ show significant differences. However, above a cutoff value for s/sαυ the distributions can be renormalized to fall on a common curve. These characteristics and direct atomic-scale evidence are consistent with nucleation of islands via adatom-substrate exchange, but the temperature dependence of the total island density appears to be inconsistent with this being the only first-order rate process taking place.


1999 ◽  
Vol 12 (4) ◽  
pp. 13-22 ◽  
Author(s):  
R.E. Caflisch ◽  
M.F. Gyure ◽  
B. Merriman ◽  
S.J. Osher ◽  
C. Ratsch ◽  
...  

2012 ◽  
Vol 1429 ◽  
Author(s):  
Ashish Kumar ◽  
Mark E. Law

ABSTRACTLevel set methods have been used for Solid phase epitaxial regrowth, etching and deposition.This study is to model the growth of nickel silicide accurately using the level set method. NiSi growth has been observed to follow a linear-parabolic law which takes into account both diffusion and interfacial reaction. This linear-parabolic system is very similar to the Deal and Grove model of SiO2 growth. This model uses similar diffusion transport and reaction rate equations. This simulation models the growth of silicide coupling diffusion solutions to level-set techniques. Dual level sets have been used for top and bottom interface propagation of silicide; velocities were estimated based on nickel concentrations at both interfaces as well as diffusivity and reaction rate of nickel. This is important to predict precise shape of silicide that will allow current crowding and field focusing effects to be modeled in transport out of the intrinsic device into the contacting layers. These simulation models can be used for latest technology nodes at 45, 32, 22nm and special devices such as FinFET’s etc. The level set method is successfully implemented and verified in Florida Object Oriented Process Simulator and growth shapes matches well with the literature Transmission Electron Microscopy data.


2002 ◽  
Vol 65 (19) ◽  
Author(s):  
C. Ratsch ◽  
M. F. Gyure ◽  
R. E. Caflisch ◽  
F. Gibou ◽  
M. Petersen ◽  
...  

Author(s):  
Luis Fernando Segalla ◽  
Alexandre Zabot ◽  
Diogo Nardelli Siebert ◽  
Fabiano Wolf

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