Time-Resolved Imaging and Photoluminescence of Gas-Suspended Nanoparticles Synthesized by Laser Ablation: Dynamics, Transport, Collection, and Ex Situ Analysis

1998 ◽  
Vol 526 ◽  
Author(s):  
D. B. Geohegan ◽  
A. A. Puretzky ◽  
G. Duscher ◽  
S. J. Pennycook

AbstractThe dynamics of gas phase nanoparticle formation by pulsed laser ablation into background gases are revealed by imaging photoluminescence and Rayleigh-scattered light from gas-suspended SiOx nanoparticles following ablation of c-Si targets into 1-10 Torr He and Ar. Two sets of dynamic phenomena are presented for times up to 15 s after KrF-laser ablation. Ablation of Si into heavier Ar results in a uniform, stationary plume of nanoparticles while Si ablation into lighter He results in a turbulent ring of particles which propagates forward at 10 m/s. The effects of gas flow on nanoparticle formation, photoluminescence, and collection are described. The first in situ time-resolved photoluminescence spectra from 1-10 nm diameter silicon particles were measured as the nanoparticles were formed and transported. Three spectral bands (1.8, 2.5 and 3.2 eV) similar to photoluminescence from oxidized porous silicon were measured, but with a pronounced vibronic structure. The size and composition of individual gas-condensed nanoparticles were determined by scanning transmission electron microscopy and correlated with the gas-phase photoluminescence. Weblike-aggregate nanoparticle films were collected at room temperature and 77K on c-Si substrates. After standard passivation anneals, the films exhibited strong room temperature photo-luminescence consisting of 3 spectral bands in agreement with the gas-phase measurements, however lacking the vibronic structure. These techniques demonstrate new ways to study and optimize the luminescence of novel optoelectronic nanomaterials during synthesis in the gas phase, prior to deposition.

1998 ◽  
Vol 72 (23) ◽  
pp. 2987-2989 ◽  
Author(s):  
David B. Geohegan ◽  
Alex A. Puretzky ◽  
Gerd Duscher ◽  
Stephen J. Pennycook

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Zechao Deng ◽  
Lizhi Chu ◽  
Xuecheng Ding ◽  
Aili Qin ◽  
Guangsheng Fu ◽  
...  

We have calculated the nucleation region (NR) location of Si nanocrystal grains prepared by pulsed laser ablation (PLA) with fluence of 4 J/cm2 in 10 Pa gas at room temperature, and ambient gases were He, Ne, and Ar, respectively. Results of calculation indicated that NR width in Ne gas was narrowest, while it was widest in He gas. Maximum mean size of grains deposited on substrates under ablated spot, which were placed horizontally, was the smallest in Ne gas. It would be attribute to more effective energy transfer during the process of collision when atomic mass of Si and ambient gas Ne are more close to each other. In this work, an additional gas flow with the same element as ambient gas was introduced, which is vertical to the plume axis at different lateral positions above ablated spot.


1995 ◽  
Vol 397 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Christopher M. Rouleau ◽  
D. B. Geohegan ◽  
A. A. Puretzky ◽  
M. A. Strauss ◽  
...  

ABSTRACTPulsed laser ablation (PLA) has several characteristics that are potentially attractive for the growth and doping of chemically complex compound semiconductors including (1) stoichiometric (congruent) transfer of composition from target to film, (2) the use of reactive gases to control film composition and/or doping via energetic-beam-induced reactions, and (3) low-temperature nonequilibrium phase formation in the laser-generated plasma “plume.” However, the electrical properties of compound semiconductors are far more sensitive to low concentrations of defects than are the oxide metals/ceramics for which PLA has been so successful. Only recently have doped epitaxial compound semiconductor films been grown by PLA. Fundamental studies are being carried out to relate film electrical and microstructural properties to the energy distribution of ablated species, to the temporal evolution of the ablation pulse in ambient gases, and to beam-assisted surface and/or gas-phase reactions. In this paper we describe results of ex situ Hall effect, high-resolution x-ray diffraction, transmission electron microscopy, and Rutherford backscattering measurements that are being used in combination with in situ RHEED and time-resolved ion probe measurements to evaluate PLA for growth of doped epitaxial compound semiconductor films and heterostructures. Examples are presented and results analyzed for doped II–VI, I–III–VI, and column-Ill nitride materials grown recently in this and other laboratories.


2001 ◽  
Vol 66 (6) ◽  
pp. 973-982 ◽  
Author(s):  
Čestmír Koňák ◽  
Jaroslav Holoubek ◽  
Petr Štěpánek

A time-resolved small-angle light scattering apparatus equipped with azimuthal integration by means of a conical lens or software analysis of scattering patterns detected with a CCD camera was developed. Averaging allows a significant reduction of the signal-to-noise ratio of scattered light and makes this technique suitable for investigation of phase separation kinetics. Examples of applications to time evolution of phase separation in concentrated statistical copolymer solutions and dissolution of phase-separated domains in polymer blends are given.


2021 ◽  
Vol 768 ◽  
pp. 138403
Author(s):  
Kendall D. Hughey ◽  
Russell G. Tonkyn ◽  
Warren W. Harper ◽  
Valerie L. Young ◽  
Tanya L. Myers ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document