Pulsed Laser Deposition of High Coercivity Barium Ferrite Films

1998 ◽  
Vol 526 ◽  
Author(s):  
W. D. Song ◽  
Y.F. Lu ◽  
J.P. Wang ◽  
X.T. Zeng ◽  
L. Lu ◽  
...  
Keyword(s):  
Deposition Temperature ◽  
Barium Ferrite ◽  
Film Plane ◽  
High Coercivity ◽  
Axis Orientation ◽  
X Ray ◽  
Atomic Force ◽  
In Situ Deposition ◽  
Ferrite Films ◽  
Single Crystal Sapphire

AbstractBarium ferrite films with high coercivity (>2000 Oe) have been prepared on single crystal sapphire substrates by laser in-situ deposition. The structures of these films were characterized by x-ray diffractometry. X-ray diffraction pattern shows a preferential c-axis orientation normal to the film plane at a high deposition temperature and a random orientation at a lower deposition temperature. The magnetic properties of the films were analysed by a Vibrating Sample Magnetometer (VSM) and surface morphology was analysed by an Atomic Force Microscope (AFM).

C-Axis Perpendicularly Oriented Barium Ferrite Thin Film Media On Silicon Substrate

1999 ◽  
Vol 577 ◽  
Author(s):  
Zailong Zhuang ◽  
Mark H. Kryder ◽  
Robert M. White ◽  
David E. Laughlin
Keyword(s):  
Barium Ferrite ◽  
Oxygen Deficiency ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Annealing Conditions ◽  
Hexagonal Barium Ferrite ◽  
Rapid Thermal Annealer ◽  
Oxygen Gas ◽  
Ferrite Films

ABSTRACTBarium ferrite thin films with excellent perpendicular c-axis orientation were successfully fabricated on Si substrate without any buffer layer. To compensate for possible barium deficiency due to the inter-diffusion between films and substrate, a barium-rich target was used. For a 900 Å-thick film, the perpendicular remanent squareness is about 0.9, while the in-plane remanent squareness is about 0.3. The saturation magnetization (Ms) is about 220 emu/cc, while the coercivity is around 3500 Oe. X-ray diffraction (XRD) results show the (001) perpendicular c-axis texture in the films. It was also found that the rapid thermal annealing conditions greatly affect the magnetic properties of barium ferrite films. With a certain flow rate of oxygen gas in the rapid thermal annealer (RTA), barium ferrite films generally crystallize with good perpendicular c-axis texture. Without oxygen gas, the hexagonal barium ferrite phase fails to develop; instead spinel Fe 30 4 phase forms. The reason for the collapsing of hexagonal barium ferrite texture is thought to be an oxygen deficiency in the barium ferrite films due to the reduction of oxygen in the films during the high temperature annealing.

C-Axis Perpendicularly Oriented Barium Ferrite Thin Film Media on Silicon Substrate

1999 ◽  
Vol 562 ◽  
Author(s):  
Zailong Zhuang ◽  
Mark H. Kryder ◽  
Robert M. White ◽  
David E. Laughlin
Keyword(s):  
Barium Ferrite ◽  
Oxygen Deficiency ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Annealing Conditions ◽  
Hexagonal Barium Ferrite ◽  
Rapid Thermal Annealer ◽  
Oxygen Gas ◽  
Ferrite Films

ABSTRACTBarium ferrite thin films with excellent perpendicular c-axis orientation were successfully fabricated on Si substrate without any buffer layer. To compensate for possible barium deficiency due to the inter-diffusion between films and substrate, a barium-rich target was used. For a 900 Å-thick film, the perpendicular remanent squareness is about 0.9, while the in-plane remanent squareness is about 0.3. The saturation magnetization (Ms) is about 220 emu/cc, while the coercivity is around 3500 Oe. X-ray diffraction (XRD) results show the (001) perpendicular c-axis texture in the films. It was also found that the rapid thermal annealing conditions greatly affect the magnetic properties of barium ferrite films. With a certain flow rate of oxygen gas in the rapid thermal annealer (RTA), barium ferrite films generally crystallize with good perpendicular c-axis texture. Without oxygen gas, the hexagonal barium ferrite phase fails to develop; instead spinel Fe3O4 phase forms. The reason for the collapsing of hexagonal barium ferrite texture is thought to be an oxygen deficiency in the barium ferrite films due to the reduction of oxygen in the films during the high temperature annealing.

Investigation Of Nucleation And Initial Stage Of Gan Growth By Atomic Force Microscopy And X-Ray Diffraction

1997 ◽  
Vol 482 ◽  
Author(s):  
P. W. Yip ◽  
S.-Q. Wang ◽  
A. J. Drehman ◽  
L. D. Zhu ◽  
P. E. Norris
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Deposition Temperature ◽  
Yellow Luminescence ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Initial Stage

AbstractThe nucleation and initial stage of GaN growth on sapphire was investigated by atomic force microscopy, X-ray diffraction and photoluminescence. A 15 to 30 nm thick GaN buffer layer deposited at proper conditions was extremely smooth and nearly amorphous. Proper post deposition annealing resulted in the buffer crystallized. The buffer layer deposition temperature, thickness and annealing time and temperature must be coordinated. Low deposition temperature and/or insufficient annealing of the buffer results in a GaN wafer which has fine spiking surface morphology with an RMS of 3.4 nm for 1.4 μm wafer, strong yellow luminescence and wide xray rocking curve FWHM. High deposition temperature, longer crystallization time, and a low growth rate results in a wafer which exhibits strong band edge luminescence without noticeable yellow luminescence, and a narrow (002) diffraction rocking curve. However, the surface morphology exhibits well developed hexagonal feature with RMS roughness of 14.3 nm for a 570 nm thick layer. X-ray rocking curve analysis revealed buffer crystallization, domain coalescence and alignment process. The FWHM of the ω–scan of GaN (101) diffraction was 1700–2000 arc seconds for 200–1400 nm wafers which indicates that the twist of the domains is not changing much with the growth.

GROWTH CONTROL OF ZnO FILMS ON GLASS BY CHEMICAL BATH DEPOSITION

2006 ◽  
Vol 13 (04) ◽  
pp. 369-373 ◽  
Author(s):  
MUNAN YU ◽  
HAIYAN XU ◽  
HAO WANG ◽  
HUI YAN ◽  
ZHILIANG PEI ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Chemical Bath Deposition ◽  
Deposition Temperature ◽  
Growth Control ◽  
Solution Concentration ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Scanning Electron

The effects of substrate-placing manner, deposition temperature and solution concentration on the preparation of ZnO films by chemical bath deposition were investigated in this work. The structures and the morphologies of as-deposited ZnO films were characterized by X-ray diffraction and scanning electron microscope, respectively. The results show that compared with vertically insertion, floating the substrates on the solutions could greatly improve the c-axis orientation of the films. The growth of ZnO films with orientation would also be favored at lower precursor concentrations and temperatures. When the concentration of Zn ( CH 3 COO )2·2 H 2 O is 0.033 M/L and the deposited temperature is 60°C, ZnO films which are well crystallized and highly c-axis orientated were obtained.

Characterization of single-crystal sapphire substrates by X-ray methods and atomic force microscopy

2011 ◽  
Vol 56 (3) ◽  
pp. 456-462 ◽  
Author(s):  
I. A. Prokhorov ◽  
B. G. Zakharov ◽  
V. E. Asadchikov ◽  
A. V. Butashin ◽  
B. S. Roshchin ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Single Crystal ◽  
X Ray ◽  
Force Microscopy ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Single Crystal Sapphire ◽  
Ray Methods

Research on the Experiment of ZnO Thin Film by Pulsed Laser Deposition

2012 ◽  
Vol 476-478 ◽  
pp. 2379-2383
Author(s):  
Qiang Ke ◽  
Yi Fan Wang ◽  
Ju Ju Hu
Keyword(s):  
Laser Deposition ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Axis Orientation ◽  
X Ray ◽  
Atomic Force ◽  
Experiment Method ◽  
Optimized Conditions ◽  
Substrate Temperatures

Using experiment method, ZnO films are prepared at various substrate temperatures, annealing temperatures and oxygen pressures. The films are examined by X-ray diffraction, atomic force microscope. Through researching the structural and optical properties of ZnO films, optimized conditions for growing ZnO films are obtained. The results suggest that high quality ZnO films with high c-axis orientation can be prepared by pulse laser deposition.

Imaging of piezoelectric activity in laser-ablated c-axis-oriented LiNbO3/ZnO thin film multilayer on glass using atomic force microscopy

2003 ◽  
Vol 18 (9) ◽  
pp. 2025-2028 ◽  
Author(s):  
Parmanand Sharma ◽  
K. Sreenivas ◽  
L. M. Belova ◽  
K. V. Rao
Keyword(s):  
Low Frequency ◽  
Film Plane ◽  
Piezoelectric Response ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Si Substrates ◽  
Piezoelectric Activity ◽  
Atomic Force ◽  
Novel Approach ◽  
Current Electric Field

A LiNbO3/ZnO multilayer with a preferred c-axis orientation normal to the plane of the substrate was grown on glass and SiO2/Si substrates by laser ablation. The piezoelectric activity in as-deposited films was demonstrated using a novel approach to the atomic force microscope. In the presence of an in-plane, low-frequency (0.1–5 Hz) alternating current electric field, we monitored and imaged the induced piezoelectric response normal to the film plane between two electrodes.

MAGNETIC FIELD ALIGNMENT OF BARIUM FERRITE THICK FILMS FOR MICROWAVE CIRCULATOR APPLICATIONS

2012 ◽  
Vol 26 (26) ◽  
pp. 1250168 ◽  
Author(s):  
BIN PENG ◽  
YUANCHAO WANG ◽  
WANLI ZHANG ◽  
WENXU ZHANG ◽  
KE TAN
Keyword(s):  
Magnetic Field ◽  
Barium Ferrite ◽  
Screen Printing ◽  
Thick Films ◽  
Film Plane ◽  
Screen Printing Method ◽  
Remanence Ratio ◽  
Ferrite Films ◽  
The Magnetic Field ◽  
Microstructure And Magnetic Properties

Barium ferrite films were prepared using screen printing method for their applications in self-biased microwave integrated circulators. The influences of alignment magnetic field on the microstructure and magnetic properties of the barium ferrite thick films were investigated. The results show that the (00l) peaks of the barium ferrite films are enhanced with the increase of alignment magnetic field. Hexagonal BaFe 12 O 19 platelets rotate and orient with c-axis perpendicular to the film plane after the magnetic field aligning. The remanence ratio of the barium ferrite films is improved from 0.52 to 0.78 with the increase of alignment magnetic field from 0 to 8 kOe. By magnetic field aligning, barium ferrite thick films with the remanence ratio of 0.8 have been prepared. A prototype of microwave integrated circulator is developed with the prepared barium ferrite films.

Structural Characterization of PLD-grown Nanometer Size Ferromagnetic NiFeMo Films

2009 ◽  
Vol 1200 ◽  
Author(s):  
Mitali Banerjee ◽  
Alak Kumar Majumdar ◽  
R J Choudhary ◽  
D M Phase ◽  
S Rai ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Structural Characterization ◽  
Middle Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
High Roughness ◽  
Ferromagnetic Bulk ◽  
Single Crystal Sapphire

AbstractThin films of 3 different thicknesses each of Ni83.2Fe3.3Mo13.5 and Ni83.1Fe6.0Mo10.9alloys have been grown using Pulsed Laser Deposition (PLD) technique. Our motivation is to investigate the magnetic properties of a few nm thick Ni alloys with mostly Mo (4d element) addition since the corresponding soft ferromagnetic bulk alloys have shown very small coercivity of ˜ 0.1 Oe. Detailed structural characterization has been undertaken before probing the magnetic properties. Arc melted alloy buttons after homogenization are used directly as targets for the deposition. Films were deposited on single crystal Sapphire (0001) substrates using excimer laser. The structural characterization has been done by X-ray diffraction (XRD), X-ray reflectivity (XRR), Energy dispersive x-ray spectroscopy (EDS), and Atomic force microscopy (AFM). The X-ray diffraction pattern shows that the films are highly textured and grown along [111] direction of the alloys. They have high lattice strain which makes the films highly resistive and the resistance decreases with increasing thickness. The EDS measurements, using Scanning electron microscope (SEM), indicate that the compositions of the films are almost the same as those of the targets. Thickness, roughness, and density gradients are estimated using XRR measurements. The thinner films have higher roughness compared to the thicker ones for both the compositions. The films have density gradient across their thickness. The bottommost low density layer has high roughness which is supposed to be the result of initial non uniform coverage of the substrate. The density of the middle layer, having the lowest roughness, is approximately near the bulk value and it increases with increasing film thickness. The change in density is not due to the variation of composition; instead it is due to the variation of void densities in the layers. The topmost layer, having the lowest density and the highest roughness, is interpreted as a porous layer which is also evident from the AFM images.

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