Chemical Stability of Advanced Metal Gate and Ultra-thin Gate Dielectric Interface During Rapid Thermal Annealing

1998 ◽  
Vol 525 ◽  
Author(s):  
B. Claflin ◽  
M. Binger ◽  
G. Lucovsky
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Stability ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Elevated Temperatures ◽  
Gate Dielectric ◽  
Metal Gate ◽  
Dielectric Interface ◽  
On Line

ABSTRACTThe chemical stability of the compound metals TiNx and WNx on SiO2 and SiO2/Si3N4 (ON) dielectric stacks is studied by on-line Auger electron spectroscopy (AES) following sequential rapid thermal annealing treatments of 15 - 180 s up to 850 °C. The TiNx/SiO2 interface reacts at 850 °C and the reaction is kinetics driven. The TiNx/Si3N4 interface is more stable than TiNx/SiO2 even after a 180 s anneal at 850 °C. WNx is stable below 650 °C both on SiO2 and Si3N4, but above this temperature the film changes, possibly due to crystallization or interdiffusion. The changes in the WNx film are not controlled by kinetics. The compound metals are chemically more stable at elevated temperatures than pure Ti or W on SiO2.

Influence of Oxygen on the Iridium Silicide Formation by Rapid Thermal Annealing

1994 ◽  
Vol 299 ◽  
Author(s):  
M. Fernandez ◽  
T. Rodriguez ◽  
A. Almendra ◽  
J. Jimenez-Leube ◽  
H. Wolters
Keyword(s):  
Auger Electron Spectroscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Oxygen Effect ◽  
Silicide Formation

AbstractIridium silicide formation by rapid thermal annealing (RTA) in an Ar atmosphere or under vacuum has been investigated. The evolution of the silicide front and the identification of the phases were monitored by Auger Electron Spectroscopy (AES) and Rutherford Backscattering Spectrometry (RBS). Oxygen was incorporated during the RTA process in an Ar atmosphere. The oxygen effect is to slow down the silicide formation and eventually to stop it. In all the cases, the oxygen piled-up at the iridium-iridium silicide interface. No distinguishable phase was formed by RTA in an Ar atmosphere. No oxygen contarsi'nation was detected when the RTA was performed under a vacuum lower than 2×10−5 Torr. In this case Ir1Si1 and Ir1Si1.75 phases were formed.

Reaction Kinetics of Sputter-Deposited Ti On SiO2 Substrates during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
E.J. Yun ◽  
H.G. Chun ◽  
K. Jung ◽  
D.L. Kwong ◽  
S. Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Kinetics Of

ABSTRACTIn this paper, the interactions of sputter-deposited Ti on SiO2 substrates during rapid thermal annealing in nitrogen at 550°C - 900°C for 10 - 60 s have been systematically studied using X-ray diffraction, Auger electron spectroscopy, transmission electron diffraction, TEM & cross-sectional TEM, and sheet resistance measurements.

Iridium Silicide Formation by Rapid Thermal Annealing

1994 ◽  
Vol 299 ◽  
Author(s):  
T. Rodriguez ◽  
H. Wolters ◽  
A. Almendra ◽  
J. Sanz-Maudes ◽  
M.F. Da Silva ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Time ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Processing Time ◽  
Rutherford Backscattering Spectrometry ◽  
Silicide Formation ◽  
Furnace Annealing ◽  
Short Processing Time

AbstractIridium silicides formation by rapid thermal annealing (RTA) under vacuum at several temperatures in the range of 350 to 650°C has been investigated. The substrates and the silicide films were analyzed by Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES). At 350°C, no distinguishable phase was detected for 240 seconds of annealing time. At 400°C, for processing time up to 45 seconds only Ir1Si1 was formed, for longer processing time Ir1Si1.75 was formed too. At higher temperatures even for very short processing time, Ir1Si1.75 was formed. Ir, Ir1Si1 and Ir1Si1.75 were present simultaneously if the iridium film was thick enough and the processing time was long enough too. For thin iridium layers, the Ir1Si1 formed was totally converted to Ir1Si1.75, if the annealing time was long enough. Formation rates were observed to be three to five orders of magnitude faster than the reported for furnace annealing.

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
G. Lucovsky ◽  
Y. Ma ◽  
S. S. He ◽  
T. Yasuda ◽  
D. J. Stephens ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Remote Plasma ◽  
Silicon Nitride Films ◽  
On Line

ABSTRACTConditions for depositing quasi-stoichiometric silicon nitride films by low-temperature, remote plasma-enhanced chemical-vapor deposition, RPECVD, have been identified using on-line Auger electron spectroscopy, AES, and off-line optical and infrared, IR, spectroscopies. Quasi-stoichiometric films, by the definition propose in this paper, do not display spectroscopic evidence for Si-Si bonds, but contain bonded-H in Si-H and Si-NH arrangements. Incorporation of RPECVD nitrides into transistor devices has demonstrated that electrical performance is optimized when the films are quasi-stoichiometric with relatively low Si-NH concentrations.

scholarly journals Bridging Electrical and Structural Interface Properties: a Combined DFT-GW Approach

2007 ◽  
Vol 2 (2) ◽  
pp. 94-103
Author(s):  
L. R. C. Fonseca ◽  
PY. Prodhomme ◽  
P. Blaise
Keyword(s):  
Density Functional ◽  
Gate Dielectric ◽  
Oxygen Affinity ◽  
Future Generation ◽  
Metal Gate ◽  
Interface Composition ◽  
Dielectric Interface ◽  
Structural Interface ◽  
Interface Structures ◽  
Normal Processing

The selection of a proper metal for replacement of polycrystalline silicon as the metal gate in future generation transistors has been hampered by pinning of the metal Fermi level at the metal/dielectric interface. Using monoclinic hafnia and zirconia as the gate dielectric we compare three different metal gate/gate dielectric interface structures where the oxygen affinity of the metal gate varies from low to high under normal processing conditions. For each of the metal gate/gate dielectric combination we considered a number of interface stoichiometries and tried to identify the most likely interface composition by comparing the calculated and measured valence band offsets (VBO). Because density functional theory (DFT) underestimates the dielectric band gap, it also underestimates the VBO thus requiring a correction to the band edges, which we accomplished using GW for cubic and monoclinic hafnia. Our GW shift value for monoclinic hafnia (0.3 eV) indicates mostly reduced interfaces in all metal/dielectric combinations considered.

Heteroepitaxial System of h-BN/Monolayer Graphene on Ni(111)

2003 ◽  
Vol 10 (04) ◽  
pp. 697-703 ◽  
Author(s):  
T. Tanaka ◽  
A. Itoh ◽  
K. Yamashita ◽  
E. Rokuta ◽  
C. Oshima
Keyword(s):  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Elevated Temperatures ◽  
Chemical Vapor ◽  
Low Energy ◽  
Monolayer Graphene ◽  
Low Energy Electron Diffraction ◽  
Ni Substrate ◽  
Low Energy Electron

A heteroepitaxial system of h-BN/monolayer graphene on Ni(111) has been investigated by means of vibrational spectroscopy, accompanied by low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The system was prepared in an epitaxial manner on a Ni(111) surface by chemical vapor deposition (CVD). We found that phonon peaks in observed spectra showed typical features of Fuchs–Kliewer (FK) phonons. The vibrational spectra of h-BN films ranging in thickness from 0 to 8.7 monolayers have been compared with theoretical spectra based on a dielectric theory. Detailed analysis has revealed new types of phonons, of which the vibrational amplitudes are localized at edges of h-BN nanocrystals. In addition, we have observed subsidence phenomena of the graphene and h-BN layers into Ni substrate at elevated temperatures.

Growth Kinetics Of SiO2 On (001)Si Catalyzed By Cu3Si At Elevated Temperatures

1999 ◽  
Vol 564 ◽  
Author(s):  
H. Y. Huang ◽  
L. J. Chen
Keyword(s):  
Growth Rate ◽  
Growth Kinetics ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Linear Growth ◽  
Elevated Temperatures ◽  
The Other ◽  
Wet Oxidation ◽  
Transmission Electron ◽  
Kinetics Of

AbstractThe oxidation of Si catalyzed by 170-nm-thick Cu3Si at elevated temperatures has been investigated by transmission electron microscopy and Auger electron spectroscopy. For wet oxidation at 140–180 °C, the growth rate of the oxide layer was increased with the temperature. On the other hand, as the temperature was increased above 200 °C, the growth rate slowed down. The growth kinetics of oxide was investigated. Controlling mechanisms for the growth of oxide owing to the grain growth of Cu3Si are discussed. The activation energy for the linear growth of oxide was measured to be 0. 19 ± 0.1 eV.

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