Comparison of Isothermal Anneal Techniques for be or Si Implanted S.I. InP

1985 ◽  
Vol 52 ◽  
Author(s):  
B. Molnar ◽  
H. B. Dietrich

ABSTRACTThis paper presents a study of the annealing of Be and Si implants into InP. It compares rapid thermal anneal (RTA) and furnace anneal (FA) techniques over a temperature range of 600-;900° C. The results demonstrate that RTA results in activation and mobilities as good as those obtained by FA for both Si and Be implant. The background Fe concentration of S.I. InP substrates lead to substantial differences in activation. Arrhenius fit of optimal activation data of Si indicates an activation energy of 1.8 eV. The Si implants display no redistribution during either type of annealing, while the Be implants display more than one type of redistribution. Moreover, the complete description of the Be redistribution requires the knowledge of both the atomic and the electronic profiles. Capless annealing eliminates the additional processing steps of capping but it also sets a limit on the maximum temperature and time of the annealing.

2016 ◽  
Vol 71 (7) ◽  
pp. 673-675 ◽  
Author(s):  
Alexander B. Salyulev ◽  
Alexei M. Potapov

AbstractThe electrical conductivity of molten CdCl2 was measured across a wide temperature range (ΔT=628 K), from 846 K to as high as 1474 K, i.e. 241° above the normal boiling point of the salt. In previous studies, a maximum temperature of 1201 K was reached, this being 273° lower than in the present work. The activation energy of electrical conductivity was calculated.


Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 581
Author(s):  
Abdulhakim A. Almajid

This study is focused on the deformation mechanism and behavior of naturally aged 7010 aluminum alloy at elevated temperatures. The specimens were naturally aged for 60 days to reach a saturated hardness state. High-temperature tensile tests for the naturally aged sample were conducted at different temperatures of 573, 623, 673, and 723 K at various strain rates ranging from 5 × 10−5 to 10−2 s−1. The dependency of stress on the strain rate showed a stress exponent, n, of ~6.5 for the low two temperatures and ~4.5 for the high two temperatures. The apparent activation energies of 290 and 165 kJ/mol are observed at the low, and high-temperature range, respectively. These values of activation energies are greater than those of solute/solvent self-diffusion. The stress exponents, n, and activation energy observed are rather high and this indicates the presence of threshold stress. This behavior occurred as a result of the dislocation interaction with the second phase particles that are existed in the alloy at the testing temperatures. The threshold stress decreases in an exponential manner as temperature increases. The true activation energy was computed by incorporating the threshold stress in the power-law relation between the stress and the strain. The magnitude of the true activation energy, Qt dropped to 234 and 102 kJ/mol at the low and high-temperature range, respectively. These values are close to that of diffusion of Zinc in Aluminum and diffusion of Magnesium in Aluminum, respectively. The Zener–Hollomon parameter for the alloy was developed as a function of effective stress. The data in each region (low and high-temperature region) coalescence in a segment line in each region.


2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.


2019 ◽  
Vol 85 (5) ◽  
pp. 60-68
Author(s):  
Yuliay Pogorenko ◽  
Anatoliy Omel’chuk ◽  
Roman Pshenichny ◽  
Anton Nagornyi

In the system RbF–PbF2–SnF2 are formed solid solutions of the heterovalent substitution RbxPb0,86‑xSn1,14F4-x (0 < x ≤ 0,2) with structure of β–PbSnF4. At x > 0,2 on the X-ray diffractograms, in addition to the basic structure, additional peaks are recorded that do not correspond to the reflexes of the individual fluorides and can indicate the formation of a mixture of solid solutions of different composition. For single-phase solid solutions, the calculated parameters of the crystal lattice are satisfactorily described by the Vegard rule. The introduction of ions of Rb+ into the initial structure leads to an increase in the parameter a of the elementary cell from 5.967 for x = 0 to 5.970 for x = 0.20. The replacement of a part of leads ions to rubium ions an increase in electrical conductivity compared with β–PbSnF4 and Pb0.86Sn1.14F4. Insignificant substitution (up to 3.0 mol%) of ions Pb2+ at Rb+ at T<500 K per order of magnitude reduces the conductivity of the samples obtained, while the nature of its temperature dependence is similar to the temperature dependence of the conductivity of the sample β-PbSnF4. By replacing 5 mol. % of ions with Pb2+ on Rb+, the fluoride ion conductivity at T> 450 K is higher than the conductivity of the initial sample Pb0,86Sn1,14F4 and at temperatures below 450 K by an order of magnitude smaller. With further increase in the content of RbF the electrical conductivity of the samples increases throughout the temperature range, reaching the maximum values at x≥0.15 (σ573 = 0.34–0.41 S/cm, Ea = 0.16 eV and σ373 = (5.34–8.16)•10-2 S/cm, Ea = 0.48–0.51 eV, respectively). In the general case, the replacement of a part of the ions of Pb2+ with Rb+ to an increase in the electrical conductivity of the samples throughout the temperature range. The activation energy of conductivity with an increase in the content of RbF in the low-temperature region in the general case increases, and at temperatures above 400 K is inversely proportional decreasing. The nature of the dependence of the activation energy on the concentration of the heterovalent substituent and its value indicate that the conductivity of the samples obtained increases with an increase in the vacancies of fluoride ions in the structure of the solid solutions.


1967 ◽  
Vol 6 (48) ◽  
pp. 911-915 ◽  
Author(s):  
M. P. Hochstein ◽  
G. F. Risk

The activation energy ϵe1 of polar firn samples determined by D.C. resistivity measurements is a function of temperature and density. In the temperature range −2° C. to −10° C. ϵe1 decreases with decreasing temperature reaching a nearly constant value for temperatures colder than −10°C.; in the temperature range −10°C. to −21°C. ϵe1 was found to decrease with increasing density and to lie between 0.7 eV. and 0.4 eV.


1988 ◽  
Vol 126 ◽  
Author(s):  
P. Mel ◽  
S. A. Schwarz ◽  
T. Venkatesan ◽  
C. L. Schwartz ◽  
E. Colas

ABSTRACTTe enhanced mixing of AlAs/GaAs superlattice has been observed by secondary ion mass spectrometry. The superlattice sample was grown by organometallic chemical vapor deposition and doped with Te at concentrations of 2×1017 to 5×1018 cm−.3 In the temperature range from 700 to 1000 C, a single activation energy for the Al diffusion of 2.9 eV was observed. Furthermore, it has been found that the relationship between the Al diffusion coefficient and Te concentration is linear. Comparisons have been made between Si and Te induced superlattice mixing.


2018 ◽  
Vol 26 (2) ◽  
pp. 169-175
Author(s):  
Yaoqi Shi ◽  
Liang Wen ◽  
Zhong Xin

The crystallization activation energy (Δ E) of a polymer comprises the nucleation activation energy Δ F and the transport activation energy Δ E*. In this paper, the Δ E of poly (L-lactic acid) (PLLA) nucleated with nucleating agent p- tert-butylcalix[8]arene (tBC8) was calculated. The results showed that the Δ E of nucleated PLLA was 165.97 kJ/mol, which is higher than that of pure PLLA. The reason why Δ E of PLLA increased when incorporating nucleating agent was studied. The increment of glass transition temperature ( Tg) for nucleated PLLA revealed that the polymer chain mobility was restricted by tBC8, which was considered as the reason for the increase of Δ E*. Further, polyethylene glycol (PEG) was added to improve the chain mobility, thus eliminated the variation of the transport activation energy Δ E* caused by tBC8. Then the effect of the increment of crystallization temperature range on the increase of Δ F was also taken into consideration. It was concluded that both decreasing the mobility of chain segments and increasing the crystallization temperature range caused an increase of Δ E for PLLA/tBC8.


1967 ◽  
Vol 6 (48) ◽  
pp. 911-915 ◽  
Author(s):  
M. P. Hochstein ◽  
G. F. Risk

The activation energyϵe1of polar firn samples determined by D.C. resistivity measurements is a function of temperature and density. In the temperature range −2° C. to −10° C.ϵe1decreases with decreasing temperature reaching a nearly constant value for temperatures colder than −10°C.; in the temperature range −10°C. to −21°C.ϵe1was found to decrease with increasing density and to lie between 0.7 eV. and 0.4 eV.


2018 ◽  
Vol 281 ◽  
pp. 34-39
Author(s):  
Fa Liang Li ◽  
Fang Fu ◽  
Li Lin Lu ◽  
Hai Jun Zhang ◽  
Shao Wei Zhang

Ultrafine powders of β-Sialon were prepared by the combined sol-gel and microwave carbothermal reduction nitridation method, and their oxidation process was studied by a non-isothermal thermogravimetry method. The results indicated that two different mechanism functions respectively corresponded to the initial and final oxidation stages. The reverse Jander equation with activation energy of 240.5 kJ/mol and the Avrami-Erofeev equation with activation energy of 410.7 kJ/mol were respectively identified as the most probable mechanism function for the initial and final oxidation stages in the temperature range of 1423-1623 K.


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