Rapid Annealing of GaAs: Uniformity and Temperature Dependence of Activation

1985 ◽  
Vol 52 ◽  
Author(s):  
K. D. Cummings ◽  
S. J. Pearton ◽  
G. P. Vella-Coleiro
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Low Dose ◽  
High Dose ◽  
Electrical Measurements ◽  
Carrier Lifetimes ◽  
Gaas Substrates ◽  
Rapid Annealing ◽  
Capacitance Voltage ◽  
Hall Effect Measurements

ABSTRACTScanning microwave photoconductance, capacitance-voltage profiling and Hall effect measurements were used to investigate the uniformity of activation of Si, Be and Mg implanted 2″ and 3″ diameter, semi-insulating GaAs substrates after rapid thermal annealing in a commercial furnace. The results indicate that carrier lifetimes and mobilities for low dose (3−4 × 1012 cm−2) implants and carrier densities for high dose (1× 1015 cm−2) implants are comparable or superior in rapidly annealed substrates to those obtained in thermally annealed implanted layers. The uniformity of these parameters is not significantly different for wafers annealed by either method. The temperature dependence of damage removal and carrier activation in the implanted regions during both furnace and transient annealing was also investigated, and demonstrates that the microwave photoconductance technique gives results for donor implantation correlating well with conventional backscattering and electrical measurements respectively.

Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide

2000 ◽  
Vol 622 ◽  
Author(s):  
J. Senzaki ◽  
K. Fukuda ◽  
Y. Ishida ◽  
Y. Tanaka ◽  
H. Tanoue ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Hall Effect ◽  
Low Dose ◽  
Dose Dependence ◽  
Activation Energies ◽  
High Dose ◽  
Charge Neutrality ◽  
Least Squares Fit ◽  
Metallic Conduction ◽  
Hall Effect Measurements

ABSTRACTThe arsenic dose dependence of electrical properties for implanted samples at 500°C and subsequently annealed at 1600°C for 30min has been investigated to derivate the activation energies of the arsenic donors in silicon carbide. Hall effect measurements were performed between 20K and 773K. Hall carrier concentration of implanted sample with high dose of 7×1015 cm−2 is independence of temperature, which indicates the formation of implanted layer with metallic conduction. For the sample with low dose of 1×1014 cm−2, the experimental Hall mobility varies directly as T3/2 below 80K and as T−3/2 above 150K. The activation energies of arsenic donors determined from the implanted sample with low dose using a least-squares fit of the charge neutrality equation are 66.8 meV for hexagonal site and 127.0 meV for cubic site, respectively.

The Nature of Electrically Inactive Implanted Arsenic in Silicon after Rapid Thermal Annealing

1991 ◽  
Vol 224 ◽  
Author(s):  
John L. Altrip ◽  
Alan G.R. Evans ◽  
Nigel D. Young ◽  
John R. Logan
Keyword(s):  
Hall Effect ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Low Dose ◽  
Solubility Limit ◽  
High Dose ◽  
Temperature Dependent ◽  
Spreading Resistance ◽  
Hall Effect Measurements

AbstractThe electrical activation of As implanted Si has been investigated on rapid thermal annealing timescales using sheet resistance, spreading resistance and Hall Effect techniques. For high dose implants (>1015 As cm-2) differential Hall Effect and spreading resistance profiles confirm the existence of a temperature dependent electrical solubility limit. However for low dose implants, annealing schedules chosen such that the electrical solubility limit is not exceeded reveal electrical deactivation which is not accounted for in the clustering theory. Hall Effect measurements performed as a function of temperature have enabled us to reveal directly electrically inactive As which is not observable at room temperature using standard electrical techniques. The results indicate that As atoms in Si introduce deep trapping levels within the bandgap which are responsible forremoving As from the conduction process at room temperature. This temperature activated process is characterized with an activation energy of 0.4eV.

TEMPERATURE DEPENDENCE OF THE HALL EFFECT IN La2−xSrxCuO4 AND ABa2Cu3O7 (A=Y, Gd) HIGH TEMPERATURE SUPERCONDUCTORS

1987 ◽  
Vol 01 (03n04) ◽  
pp. 1067-1070 ◽  
Author(s):  
M. Petravić ◽  
A. Hamzić ◽  
B. Leontić ◽  
L. Forró
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Normal State ◽  
High Temperature Superconductors ◽  
The Other ◽  
Hall Constant ◽  
High Temperature Superconducting ◽  
Superconducting Ceramics ◽  
Hall Effect Measurements

We present Hall effect measurements in the normal state of the high temperature superconducting ceramics La2−xSrxCuO4 (x=0, 0.1, 0.15, 0.2, 0.25, 0.3), YBa2Cu3o7 and GdBa2Cu3O7 . The first family has temperature independent Hall constant for x>0, while in the other two systems RH is proportional to 1/T. From the Hall effect it follows that the transport in these compounds is hole-like.

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

2006 ◽  
Vol 527-529 ◽  
pp. 633-636 ◽  
Author(s):  
Sylvie Contreras ◽  
Marcin Zielinski ◽  
Leszek Konczewicz ◽  
Caroline Blanc ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Temperature Dependent ◽  
Large N ◽  
Hall Effect Measurements ◽  
Van Der Pauw ◽  
P Type ◽  
Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes

1987 ◽  
Vol 97 ◽  
Author(s):  
Gerhard Pensl ◽  
Reinhard Helbig ◽  
Hong Zhang ◽  
Gonther Ziegler ◽  
Peter Lanig
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Quantum Efficiency ◽  
Isothermal Annealing ◽  
Furnace Annealing ◽  
Hall Effect Measurements

ABSTRACTIon implantation of 14N and Rapid Isothermal Annealing (RIA) were employed to achieve n-type doping in epitaxial-grown 6H-SiC layers. The electrical properties of the implanted films were investigated by Hall effect measurements in order to optimize the annealing parameters. In comparison with standard furnace annealing (1470°C/7min), the annealing parameters for the RIA process could be considerably reduced (1050°C/4min). Based on planar technique, implanted p-n junctions were fabricated. The temperature dependence of I-V characteristics and of the quantum efficiency of photodiodes were studied. The maximum of the quantum efficiency at γ=330 nm reaches values of 35% at 400°C.

Formation of buried α- and β- FeSi2 in (100) Si by high dose ion implantation

1992 ◽  
Vol 279 ◽  
Author(s):  
K. Maex ◽  
A. Lauwers ◽  
M. Van Hove ◽  
W. Vandervorst ◽  
M. Van Rossum
Keyword(s):  
Ion Implantation ◽  
Hall Effect ◽  
Phase Formation ◽  
Ion Beam ◽  
High Dose ◽  
Spreading Resistance ◽  
Orientation Effects ◽  
Transport Measurements ◽  
Hall Effect Measurements ◽  
Anneal Temperature

ABSTRACTA study on ion beam synthesis of buried α- and β-FeSi2 in >100< Si is presented. Phase formation has been investigated as a function of implant and anneal temperature. Layer characterization was performed by RBS, XRD, resistivity, spreading resistance and Hall effect measurements. Orientation effects in the layers have been observed depending on the implant temperature. Transport measurements show that die holes are the majority carriers in the semiconducting layers.

Mbe-Growth of InAs and GaSb Epitaxial Layers on GaAs Substrates

1989 ◽  
Vol 145 ◽  
Author(s):  
J. R. Söderström ◽  
D.H. Chow ◽  
T.C. McGill ◽  
T.J. Watson
Keyword(s):  
Hall Effect ◽  
Carrier Concentration ◽  
Growth Parameters ◽  
Hole Mobility ◽  
Extensive Study ◽  
Semiconductor Films ◽  
Mbe Growth ◽  
Gaas Substrates ◽  
Hall Effect Measurements ◽  
P Type

AbstractWe have grown a number of InAs and GaSb bulk layers on GaAs substrates and studied the properties of the semiconductor films as a function of the various growth parameters. Preliminary results from GaSb growth are presented in addition to an extensive study of InAs growth. The films were characterized during growth by RHEED. RHEED-oscillations were observed during both InAs and GaSb growths. Hall effect measurements yielded peak electron mobilities for InAs of 18,900 cm2/Vs at 300 K and 35,000 cm2/Vs at 77 K. For GaSb the as grown layers were found to be p-type with a carrier concentration of 9x1015cm-3 and a hole mobility of 910 cm2 /Vs at 300 K.

P-6H-SiC Conductivity Compensation after Irradiation of 8MeV Protons

2013 ◽  
Vol 740-742 ◽  
pp. 353-356
Author(s):  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
Sergey V. Belov ◽  
Elena V. Bogdanova ◽  
Gagik A. Oganesyan
Keyword(s):  
Hall Effect ◽  
Irradiation Dose ◽  
Removal Rate ◽  
Initial Value ◽  
Capacitance Voltage ◽  
Full Compensation ◽  
Hall Effect Measurements ◽  
Mev Protons

Carrier removal rate (Vd) in p-6H-SiC in its irradiation with 8 MeV protons has been studied. p-6H-SiC samples were produced by sublimation in a vacuum. Vd was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that full compensation of samples with initial value of Na-Nd 1.5 x1018 cm-3 occurs at an irradiation dose of ~1.1 1016 cm-2. In this case, the carrier removal rate was ~130 cm-1

Photoluminescence, Capacitance-Voltage, and Variable Field Hall Effect Measurements of Mg-Doped InN

2006 ◽  
Vol 955 ◽  
Author(s):  
Craig Hartley Swartz ◽  
Steven M. Durbin ◽  
Roger J. Reeves ◽  
Katherine Prince ◽  
John V. Kennedy ◽  
...  
Keyword(s):  
Hall Effect ◽  
Molecular Beam ◽  
Variable Magnetic Field ◽  
Surface Electron ◽  
Type Layer ◽  
Capacitance Voltage ◽  
Hall Effect Measurements ◽  
P Type ◽  
Lattice Matched ◽  
Mg Doped

ABSTRACTVariable magnetic field Hall effect, photoluminescence (PL) and capacitance-voltage (CV) analysis have been used to study InN layers grown by plasma assisted molecular beam epitaxy. All three techniques reveal evidence of a buried p-type layer beneath a surface electron accumulation layer in heavily Mg-doped samples. The use of lattice-matched Yttria-stablized Zirconia substrates also provides evidence of a p-type layer.

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