Diluted Magnetic Semiconductor Magneto-Optic Waveguides for Monolithic-Integration with Semiconductor Optic Devices

1998 ◽  
Vol 517 ◽  
Author(s):  
K. Ando ◽  
W. Zaets ◽  
K. Watanabe
Keyword(s):  
Molecular Beam ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Core Layer ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxy Method ◽  
Clad Layer ◽  
Diluted Magnetic ◽  
Mn Concentration ◽  
Magneto Optic

AbstractWe propose to use a paramagnetic diluted magnetic semiconductor Cd1-xMnxTe for magneto-optic waveguides, which can be integrated with semiconductor optic devices. Single crystal Cd1-xMnxTe films are epitaxially grown on GaAs substrates by molecular beam epitaxy method. A good optical confinement is obtained in the waveguide by using a Cd1-yMnyTe clad layer with Mn concentration higher than that of the waveguide core layer.

Group-IV-diluted magnetic semiconductor FexSi1−x thin films grown by molecular beam epitaxy

2009 ◽  
Vol 311 (7) ◽  
pp. 2139-2142 ◽  
Author(s):  
W.F. Su ◽  
L. Gong ◽  
J.L. Wang ◽  
S. Chen ◽  
Y.L. Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Group Iv ◽  
Diluted Magnetic

scholarly journals InGaAs Quantum Dots on Cross-Hatch Patterns as a Host for Diluted Magnetic Semiconductor Medium

2013 ◽  
Vol 2013 ◽  
pp. 1-5
Author(s):  
Teeravat Limwongse ◽  
Supachok Thainoi ◽  
Somsak Panyakeow ◽  
Songphol Kanjanachuchai
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Magnetic Medium ◽  
Magnetic Region ◽  
Diluted Magnetic ◽  
Mismatched Heteroepitaxy ◽  
Quantum Dimensions ◽  
Magnetic Quantum Dots

Storage density on magnetic medium is increasing at an exponential rate. The magnetic region that stores one bit of information is correspondingly decreasing in size and will ultimately reach quantum dimensions. Magnetic quantum dots (QDs) can be grown using semiconductor as a host and magnetic constituents added to give them magnetic properties. Our results show how molecular beam epitaxy and, particularly, lattice-mismatched heteroepitaxy can be used to form laterally aligned, high-density semiconducting host in a single growth run without any use of lithography or etching. Representative results of how semiconductor QD hosts arrange themselves on various stripes and cross-hatch patterns are reported.

GaFeAs: a diluted magnetic semiconductor grown by molecular beam epitaxy

2000 ◽  
Vol 371 (1-2) ◽  
pp. 272-277 ◽  
Author(s):  
Shingo Hirose ◽  
Masaaki Yamaura ◽  
Shigeru Haneda ◽  
Kazuhiko Hara ◽  
Hiro Munekata
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Diluted Magnetic

Diluted magnetic semiconductor Ge1−xMnxTe films prepared by molecular beam epitaxy

2006 ◽  
Vol 505 (1-2) ◽  
pp. 145-147 ◽  
Author(s):  
W.Q. Chen ◽  
K.L. Teo ◽  
M.B.A. Jalil ◽  
Y.F. Liew ◽  
T.C. Chong
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Diluted Magnetic

Magnetic and Transport Properties of Ga1-xMnxAs, a New III-V Diluted Magnetic Semiconductor

1997 ◽  
Vol 475 ◽  
Author(s):  
A. Van Esch ◽  
L. Van Bocksta ◽  
J. De Boeck ◽  
G. Verbanck ◽  
A. Van Steenbergen ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Magnetic Ordering ◽  
Strongly Correlated ◽  
Metal Insulator ◽  
Transport Behaviour ◽  
Diluted Magnetic ◽  
Mn Concentration ◽  
Mn Concentrations ◽  
Strong Antiferromagnetic Interaction

ABSTRACTGa1-xMnxAs is a new III-V diluted magnetic semiconductor that can be grown by MBE with Mn concentrations up to x ∼ 0.09. Below a critical temperature Tc, determined by the Mn concentration (about 50 K for x = 0.05) the material becomes ferromagnetic. This is attributed to the magnetic long-range order of Mn-hole complexes, the latter being the result of the strong antiferromagnetic interaction between the holes and Mn 3d spins. Transport and magnetic properties of the Ga1-xMnxAs system are strongly correlated. Above Tc, all samples show transport behaviour characteristic for materials near the metal insulator transition. Below Tc, resistivity decreases as the magnetic ordering sets in. When the magnetisation has reached its saturation value (below ∼ 20 K), variable range hopping is the main transport mechanism. Also, a negative magnetoresistance is observed below Tc.

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