A Quantitative Study of Void Nucleation Times in Passivated Aluminum Interconnects

1998 ◽  
Vol 516 ◽  
Author(s):  
Jonathan C. Doan ◽  
John C. Bravman ◽  
Paul A. Flinn ◽  
Thomas N. Marieb
Keyword(s):  
Quantitative Study ◽  
High Voltage ◽  
Void Nucleation ◽  
Normal Distributions ◽  
Failure Times ◽  
Interconnect Test ◽  
Entire Structure ◽  
Simultaneous Testing ◽  
Aluminum Interconnects ◽  
A Current

AbstractAccelerated electromigration tests were performed in a High Voltage SEM (HVSEM). These experiments were conducted on 10 identical, passivated Al interconnect test structures at a temperature of 237°C and a current density of 30mA/µm2. Simultaneous testing and observation of the entire structure allowed the void nucleation times to be measured. Two normal distributions fit the nucleation times. The second of these distributions coincides roughly with the distribution of failure times of the test structures. Fracture of the passivation is hypothesized as the mechanism that causes the concurrent late nucleation and failure processes.

Experimental Investigation of High-Speed/High-Voltage SMA Actuation

2017 ◽  
Author(s):  
Paul Motzki ◽  
Tom Gorges ◽  
Thomas Würtz ◽  
Stefan Seelecke
Keyword(s):  
Shape Memory ◽  
High Voltage ◽  
Supply Voltage ◽  
High Energy ◽  
Wire Diameter ◽  
High Current ◽  
Sma Actuator ◽  
The Wire ◽  
Supply Voltages ◽  
A Current

The thermal shape memory effect describes the ability of a deformed material to return to its original shape when heated. This effect is found in shape memory alloys (SMAs) such as nickel-titanium (NiTi). SMA actuator wire is known for its high energy density and allows for the construction of compact systems. An additional advantage is the so-called “self-sensing” effect, which can be used for sensor tasks within an actuator-sensor-system. In most applications, a current is used to heat the SMA wires through joule heating. Usually a current between zero and four ampere is recommended by the SMA wire manufacturers depending on the wire diameter. Therefore, supply voltage is adjusted to the SMA wire’s electrical resistance to reach the recommended current. The focus of this work is to use supply voltages of magnitudes higher than the recommended supply voltages on SMA actuator wires. This actuation method has the advantage of being able to use industry standard voltage supplies for SMA actuators. Additionally, depending on the application, faster actuation and higher strokes can be achieved. The high voltage results in a high current in the SMA wire. To prevent the wire from being destroyed by the high current, short pulses in the micro- and millisecond range are used. As part of the presented work, a test setup has been constructed to examine the effects of the crucial parameters such as supply voltage amplitude, pulse duration, wire diameter and wire pre-tension. The monitored parameters in this setup are the wire displacement, wire current and force generated by the SMA wire. All sensors in this setup and their timing is validated through several experiments. Additionally, a highspeed optical camera system is used to record qualitative videos of the SMA wire’s behavior under there extreme conditions. This optical feedback is necessary to fully understand and interpret the measured force and displacement signals.

A current-comparator-based system for on-site calibrations of high voltage PMU systems

2012 ◽  
Author(s):  
Eddy So ◽  
Rejean Arseneau ◽  
Yi-hua Tang ◽  
Gerard Stenbakken ◽  
Tom Nelson
Keyword(s):  
High Voltage ◽  
Current Comparator ◽  
A Current

Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 758-761 ◽  
Author(s):  
Luigia Lanni ◽  
Reza Ghandi ◽  
Martin Domeij ◽  
Carl Mikael Zetterling ◽  
Bengt Gunnar Malm ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
High Voltage ◽  
Current Gain ◽  
A Current

In this work, a 4H-SiC lateral PNP transistor fabricated in a high voltage NPN technology has been simulated and characterized. The possibility of fabricating a lateral PNP with a current gain larger than 1 has been investigated. Device and circuit level solutions have been performed.

Bipolar SiC-Diodes – Challenges Arising from Physical and Technological Aspects

2007 ◽  
Vol 556-557 ◽  
pp. 889-894 ◽  
Author(s):  
Wolfgang Bartsch ◽  
Heinz Mitlehner ◽  
S. Gediga
Keyword(s):  
High Voltage ◽  
Basal Plane ◽  
Current Level ◽  
Experimental Results ◽  
Junction Temperature ◽  
Base Thickness ◽  
Switching Behaviour ◽  
A Current

In this contribution we summarize measurements on bipolar high voltage SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4° off the [0001] basal plane, whereas the p-emitter thickness was varied in predetermined ratios to the n-base thickness. The switching behaviour of optimized 6.5 kV-Diodes at a current level of 25 A is shown at DC link voltages up to 4 kV and at a junction temperature of 125°C. Experimental results are discussed in terms of snappiness.

scholarly journals Bullying homofobikoari buruzko aurrezagutzak

Tantak ◽  
2019 ◽  
Vol 30 (2) ◽  
pp. 177-200
Author(s):  
Amets Zarraga ◽  
Eneko Tejada ◽  
Arantzazu López de la Serna ◽  
Naiara Bilbao
Keyword(s):  
Sexual Orientation ◽  
Quantitative Study ◽  
Current Problem ◽  
Research Work ◽  
General Idea ◽  
Negative Behaviors ◽  
Education Professionals ◽  
Homophobic Bullying ◽  
The Subject ◽  
A Current

ABSTRACTBullying is a current problem that occurs in education and has recently become extremely important for society. However, homophobic bullying has not been given the importance it should have. This one, refers to the harassment that is suffered by sexual orientation or condition, sometimes being the reason for such negative behaviors. Therefore, with this research work, by quantitative study, it has been analyzed the knowledge that primary education teachers have on this matter. The inormation received shows that education professionals have a general idea of the subject, but exposes the lack of precision about homophobic bullying.KEYWORDS: bullying, homophobic bullying, preconceptions.LABURPENABullying-a eskolan errepikatua izan den eta azken aldian gizartearentzat garrantzia duen arazoa da. Eskola jazarpena duen aldaeretako bati, hots, bullying homofobikoari oraindik ez zaio behar besteko garrantzia eman. Azkeneko honek, ikasle batzuek bullying-a orientazio edo baldintza sexualarengatik sufritzen duten erasoei erreferentzia egiten dio, jokaera negatiboen arrazoia delarik. Hortaz, ikerketa lan honen bitartez, Lehen Hezkuntzako bost ikastetxeetako irakasleriak problematika honen inguruan duen ezagutza maila aztertu da. Ikerketan jasotako datuek, hezkuntzako profesionalek gaiaren inguruan ideia orokor bat dutela adierazi duten arren, bullying homofobiko kontzeptuaren inguruko zehaztapenak falta zaizkiela jaso da emaitzetan.GAKO-HITZAK: eskola jazarpena, bullying homofobikoa, aurreiritziak.

scholarly journals Impact Transient Characteristics and Selection Method of Voltage Transformer Fuse

Energies ◽  
2019 ◽  
Vol 12 (4) ◽  
pp. 737
Author(s):  
Ke Wang ◽  
Hongwen Liu ◽  
Qing Yang ◽  
Lu Yin ◽  
Jisheng Huang
Keyword(s):  
High Voltage ◽  
Selection Method ◽  
Impact Testing ◽  
Electrical Performance ◽  
Voltage Transformer ◽  
X Ray ◽  
Electromagnetic Transient ◽  
Current Testing ◽  
Steady State Current ◽  
A Current

In a neutral ungrounded system, the high voltage fuses used to protect voltage transformers (VTs) often abnormally blow out, causing unbalanced VT operation. Fuses also fail to blow out in time, resulting in further damage to the VT. This paper reported the results of steady-state current testing, breaking characteristics, X-ray measurements, fuse corona testing, and electromagnetic transient impact testing for VT fuses. This paper comprehensively examines and analyzes the quality and electrical performance of VT fuses and provides new guidance for the use of high voltage fuses in voltage transformers. This paper recommends that 35 and 10 kV systems use fuses rated for a current of 1 A based on a single fuse, which is not easily oxidized and has a wound skeleton composed of an Ag or Ni melt.

Loop and Void Formation in Copper During High Voltage Electron Microscope Irradiation

1973 ◽  
Vol 31 ◽  
pp. 22-23
Author(s):  
E. A. Kenik ◽  
T. E. Mitchell
Keyword(s):  
Electron Microscope ◽  
High Voltage ◽  
Void Nucleation ◽  
Cold Work ◽  
Void Formation ◽  
Dislocation Loops ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Set Up

The formation of dislocation loops and voids under neutron, ion, and electron irradiation is well documented. Since irradiation produces Frenkel pairs, the presence of biased interstitial sinks is required for void formation to procede. It is generally accepted that dislocations, generated either by cold-work or irradiation, act as the preferential sinks.During irradiation in the high voltage electron microscope, both interstitials and vacancies are lost to foil surfaces and corresponding denuded zones are set up. As a result of image forces, dislocation loops formed upon irradiation tend to unfault and glide out of the foil. Thus, below a given thickness, the foil is unable to maintain a sufficiently high dislocation density to support void nucleation and growth.

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