Mocvd of Copper from the Solution of New and Liquid Precursor (hfac)Cu(1-pentene)

1998 ◽  
Vol 514 ◽  
Author(s):  
H.-K. Shin ◽  
Y.-H. Cho ◽  
D.-J. Yoo ◽  
H.-J. Shin ◽  
E.-S. Lee
Keyword(s):  
Surface Morphology ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Pure Copper ◽  
Copper Films ◽  
Vapor Pressures ◽  
Dynamic Vacuum ◽  
Liquid Precursor ◽  
Temperature Range

ABSTRACTIn an attempt to increase the deposition rate, new Cu (I) compounds, (hfac)Cu(1-pentene)(1) and (hfac)Cu(VTMOS)(2) have been synthesized. These species are chartreuse liquids and exhibit sufficient vapor pressures to allow high transport rates.In order to avoid the premature decomposition of the copper precursors during CVD processes, the 50% of free 1-pentene, and VTMOS was added to the compounds 1 and 2 respectively. These mixtures 1 and 2 were used in this study. Approximately 2gm of precursor was used for each experiment. No premature decomposition of the precursor in the source reservoir was observed during CVD processes. It is a sufficiently important result to expect the use of these mixtures in copper CVD to achieve the reproducible deposition.The copper films using these mixtures were deposited in a hot-wall pyrex reactor at a pressure of approximately 10–2 torr under dynamic vacuum. The films deposited at 100°C, 150°C and 200°C from the mixture 1. Pure copper films were deposited from these species. The resistivities 1.8 ∼ 2.1 μΩcm were obtained in the deposition temperature range. SEM revealed that the surface morphology of the films grown in these depositon temperature range was composed of dense film and grains were well connected. The deposition rate at 200°C was 3,500 Å/min.

High-Speed Deposition of SiC Thick Film by Halide Precursor

2014 ◽  
Vol 616 ◽  
pp. 37-42 ◽  
Author(s):  
Ming Xu Han ◽  
Wei Zhou ◽  
Ding Heng Zheng ◽  
Rong Tu ◽  
Song Zhang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Thick Film ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
High Speed ◽  
Gaseous Mixture ◽  
Chemical Vapor ◽  
Preferred Orientation ◽  
Graphite Substrate ◽  
Deposition Effect

Polycrystalline ڂ˽SiC thick film with mm-scaled thickness was deposited on a graphite substrate using a gaseous mixture of SiCl4 + CH4 and H2 at temperatures ranging from 1573 to 1823 K by chemical vapor deposition. Effect of deposition temperature (Tdep) on deposition rate, surface morphology and preferred orientation has been studied. The preferred orientation changed from <111> to <110> with increasing Tdep. The maximum deposition rate (Rdep) of 1125 ڌ̽˰̸−1 has been obtained. The surface morphology has changed from six-fold pyramid to five-fold facet with increasing Tdep.

Effect of Substrate Orientation on CdTe Film Growth by OMVPE

1990 ◽  
Vol 216 ◽  
Author(s):  
D.W. Snyder ◽  
E.I. Ko ◽  
S. Mahajan ◽  
P.J. Sides
Keyword(s):  
Surface Morphology ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Film Growth ◽  
Cdte Film ◽  
Structural Quality ◽  
Substrate Orientation

ABSTRACTMost CdTe epilayers grown by OMVPE have been deposited on two low index orientations: {111}Te and {100}. In this study we have examined the OMVPE of CdTe as a function of deposition temperature on CdTe substrates having the four low index orientations ({111}Te, P111}Cd, {110}, and {100}) and on the {211}Te and {211}Cd orientations. Results are presented for deposition rate, surface morphology, and structural quality of the epilayers.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

An anomaly in the specific heat below 3 °K of copper containing hydrogen

1969 ◽  
Vol 47 (14) ◽  
pp. 1485-1491 ◽  
Author(s):  
Neil Waterhouse
Keyword(s):  
Specific Heat ◽  
Molecular Hydrogen ◽  
Pure Copper ◽  
Solid Hydrogen ◽  
Rotational State ◽  
Experimental Results ◽  
Ortho Hydrogen ◽  
Temperature Range ◽  
A Value ◽  
Heat Curve

The specific heat of copper heated in hydrogen at 1040 °C has been measured over the temperature range 0.4 to 3.0 °K and found to be anomalous. The anomaly occurs in the same temperature range as the solid hydrogen λ anomaly which, in conjunction with evidence of ortho to para conversion of hydrogen in the sample, suggests the presence of molecular hydrogen in the copper. The anomaly reported by Martin for "as-received" American Smelting and Refining Company (ASARCO) 99.999+ % pure copper has been briefly compared with the present results. The form of the anomaly produced by the copper-hydrogen specimen has been compared with Schottky curves using the simplest possible model, that for two level splitting of the degenerate J = 1 rotational state of the ortho-hydrogen molecule.Maintenance of the copper-hydrogen sample at ~20 °K for approximately 1 week removed the "hump" in the specific heat curve. An equation of the form Cp = γT + (464.34/(θ0c)3)T3 was found to fit these experimental results and produced a value for γ which had increased over that for vacuumannealed pure copper by ~2%.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Stress development and relaxation in copper films during thermal cycling

1993 ◽  
Vol 8 (8) ◽  
pp. 1845-1852 ◽  
Author(s):  
M.D. Thouless ◽  
J. Gupta ◽  
J.M.E. Harper
Keyword(s):  
Thermal Cycling ◽  
Integrated Circuit ◽  
Temperature Hysteresis ◽  
Copper Films ◽  
Cu Films ◽  
Dislocation Glide ◽  
Temperature Range ◽  
Cu Film ◽  
Relaxation Of Stresses ◽  
Power Law Creep

The reliability of integrated-circuit wiring depends strongly on the development and relaxation of stresses that promote void and hillock formation. In this paper an analysis based on existing models of creep is presented that predicts the stresses developed in thin blanket films of copper on Si wafers subjected to thermal cycling. The results are portrayed on deformation-mechanism maps that identify the dominant mechanisms expected to operate during thermal cycling. These predictions are compared with temperature-ramped and isothermal stress measurements for a 1 μm-thick sputtered Cu film in the temperature range 25–450 °C. The models successfully predict both the rate of stress relaxation when the film is held at a constant temperature and the stress-temperature hysteresis generated during thermal cycling. For 1 μm-thick Cu films cycled in the temperature range 25–450 °C, the deformation maps indicate that grain-boundary diffusion controls the stress relief at higher temperatures (>300 °C) when only a low stress can be sustained in the films, power-law creep is important at intermediate temperatures and determines the maximum compressive stress, and that if yield by dislocation glide (low-temperature plasticity) occurs, it will do so only at the lowest temperatures (<100 °C). This last mechanism did not appear to be operating in the film studied for this project.

Single Wafer Amorphous Silicon Process Evaluation

1997 ◽  
Vol 467 ◽  
Author(s):  
David O'Meara ◽  
Chow Ling Chang ◽  
Roc Blumenthal ◽  
Rama I. Hegde ◽  
Lata Prabhu ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Morphology ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Cross Sections ◽  
Growth Conditions ◽  
Degree Of Crystallinity ◽  
Deposition Parameters ◽  
Before And After ◽  
Production Requirement

ABSTRACTSingle wafer amorphous silicon deposition was characterized through process modeling and film characterization for application in semiconductor production. DOE methodology was used to determine the main deposition parameters, and the responses were limited to device production requirement properties of surface roughness, deposition rate and degree of crystallinity of the as-deposited film. The data trends and models show that deposition temperature and silane flow are the main factors. Increasing either or both factor increases the deposition rate and the surface roughness. The surface morphology, evaluated by AFM, SEM and TEM, was found to be rougher at extreme growth conditions than the poly crystalline film formed after anneal. The as-deposited surface morphology was not a result of pre-anneal crystal formations as determined by TEM cross sections of samples before and after anneal. Lack of crystalinity is important for impurity diffusion considerations. Device application of the single wafer a-Si process will be a compromise between growth rate (and associated throughput) and surface roughness that can be tolerated.

Influence of Nano-Refrigeration-Oil on Saturated Vapor Pressure of R22

2011 ◽  
Vol 694 ◽  
pp. 309-314 ◽  
Author(s):  
Jiang Feng Lou ◽  
Rui Xiang Wang ◽  
Min Zhang
Keyword(s):  
Experimental Data ◽  
Vapor Pressure ◽  
Mass Fraction ◽  
Saturated Vapor Pressure ◽  
Saturated Vapor ◽  
Experimental Results ◽  
Vapor Pressures ◽  
Temperature Range ◽  
Mass Fractions

The saturated vapor pressures of R22 uniformly mixed with refrigeration oil and nano- refrigeration-oil were measured experimentally at a temperature range from 263 to 333K and mass fractions from 1 to 5%. The experimental results showed that the saturated vapor pressure of R22/KT56 mixture was lower than that of pure R22; the pressure deviation between them increased with a raising mass fraction of refrigeration oil and temperature. After adding nano-NiFe2O4 and nano-fullerene into KT56, the pressure deviation increased at the same mass fraction and temperature. A saturated vapor pressure correlation for R22 and refrigeration oil/nano-refrigeration-oil mixture was proposed, and the calculated values agreed with the experimental data within the deviation of ± 0.77%.

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