Homogenization of the Bilayers of Cu-Al Alloy and Pure Copper to Produce CU-0.3 at.% Al Alloy Films

1998 ◽  
Vol 514 ◽  
Author(s):  
Pei-I Wang ◽  
S. P. Murarka ◽  
S. Bedell ◽  
W. A. Lanford
Keyword(s):  
Diffusion Barrier ◽  
Pure Copper ◽  
Al Alloy ◽  
Electrical Stability ◽  
Copper Metal ◽  
Adhesion Promoter ◽  
Mos Capacitors ◽  
Alloy Films ◽  
Depth Profiles ◽  
Bilayer Films

ABSTRACTPreparation of Cu-0.3 at.% Al alloy films by homogenization anneals of metallic bilayers consisting of Cu/Cu-AI on SiO2 is studied to produce advanced copper based metallization for future ICs. The bilayer films were annealed at temperature in the range of 200°C- 400°C and the depth profiles were obtained using Rutherford Backscattering technique. It is found that Al diffuses through the undoped copper layer to surface - leading to lower Al concentration in the original Al doped Cu layer and apparently increased concentration of Al in undoped Cu (not detectable by RBS). The resistivity of these annealed films ranged from 2.1 to 2.4 μΩ-cm depending on final Al concentration achieved. Electrical stability of such MOS capacitors was also investigated. All these results will be presented and discussed showing that Al-doped copper layers can be used as diffusion barrier/adhesion promoter between the oxide ILD and copper metal.

Stability of Sputter Deposited Al-Cu Bilayers on SiO2.

1992 ◽  
Vol 260 ◽  
Author(s):  
R. Nandan ◽  
S. P. Murarka ◽  
A. Pant ◽  
C. Shepard ◽  
W. A. Lanford
Keyword(s):  
Electrical Performance ◽  
X Ray Diffraction ◽  
Adhesion Promoter ◽  
Mos Capacitors ◽  
Rutherford Back Scattering ◽  
Cu Metallization ◽  
Bilayer Films ◽  
Sputter Deposited ◽  
The Stability ◽  
And Diffusion

ABSTRACTAn investigation of the stability and electrical characteristics of Aluminum-Copper bilayer films on SiO2 has been carried out. In this investigation, a thin layer of sputtered aluminum is used as a diffusion barrier/adhesion promoter between the copper and SiO2. The electrical performance of these structures when subjected to thermal cycles and applied biases is determined. The interactions and diffusion of copper through aluminum into SiO2 was investigated using both blanket films and MOS capacitors. Results are compared with those obtained from structures of Al and Cu metallization on SiO2. Samples were annealed at various temperatures in the range of 200°C to 500°C. Analysis using four-point probe resistivity measurements, X-ray diffraction, and Rutherford Back Scattering were carried out. MOS capacitors are used to establish performance under applied bias. Capacitance-Voltage characteristics of formed alloys are discussed. These results will be presented and discussed in view of the applicability of aluminum as the adhesion promoter for copper interconnections on SiO2.

Morphology and crystallography of single crystal precipitates on Al alloy films grown by the sputtering method

1993 ◽  
Vol 73 (12) ◽  
pp. 8575-8579 ◽  
Author(s):  
Hideo Niwa ◽  
Ichiro Yamaguchi ◽  
Haruyoshi Yagi ◽  
Masaharu Kato
Keyword(s):  
Single Crystal ◽  
Al Alloy ◽  
Alloy Films

scholarly journals Friction Stir Welding with Low-Medium-High Tool Travel Speed of 0.95 Mg-Al-Alloy and Pure Copper: Electrochemical and Surface Studies

2018 ◽  
Author(s):  
Neetesh Soni ◽  
Ambrish Singh
Keyword(s):  
Friction Stir Welding ◽  
Process Parameters ◽  
Pure Copper ◽  
Travel Speed ◽  
Localized Corrosion ◽  
Al Alloy ◽  
Kelvin Probe ◽  
Friction Stir ◽  
Surface Optical ◽  
Joining Process

The aim of this work is to assess the influence of Friction Stir Welding (FSW), process parameters, optimized tool traveling speed, and corrosion resistance of the 0.95 Mg-Al-alloy and pure copper weldment. Samples of aluminum-copper with and without deformation were characterized to investigate the metallurgical effects created during the welding deformation process. Effect of process parameters on microstructure and corrosion rate have been investigated for all the samples. All the electrochemical and polarization tests were done in 3.5 wt.% NaCl solution. Scanning Kelvin Probe (SKP) was done to detect the localized corrosion on the surface. Optical micrography observation indicated that the primary α-Al phase, which was formed during solidification can effectively limit the growth of Cu9Al4 phase. Finer acicular α-Al precipitates were observed in CuAl matrix during joining process that tends to coarser with the increase in tools travel speed. The electrochemical and polarization results showed that among all the tool travelling speed the specimen joined at tool travelling speed of 40 mm/min shows the best non-corrosive property.

scholarly journals Diffusion Barrier Performance of AlCrTaTiZr/AlCrTaTiZr-N High-Entropy Alloy Films for Cu/Si Connect System

Entropy ◽  
2020 ◽  
Vol 22 (2) ◽  
pp. 234
Author(s):  
Chunxia Jiang ◽  
Rongbin Li ◽  
Xin Wang ◽  
Hailong Shang ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Intermetallic Compounds ◽  
Diffusion Barrier ◽  
Lattice Mismatch ◽  
Copper Film ◽  
Amorphous Structure ◽  
High Entropy Alloy ◽  
Alloy Films ◽  
High Entropy ◽  
Atom Diffusion ◽  
Barrier Performance

In this study, high-entropy alloy films, namely, AlCrTaTiZr/AlCrTaTiZr-N, were deposited on the n-type (100) silicon substrate. Then, a copper film was deposited on the high-entropy alloy films. The diffusion barrier performance of AlCrTaTiZr/AlCrTaTiZr-N for Cu/Si connect system was investigated after thermal annealing for an hour at 600 °C, 700 °C, 800 °C, and 900 °C. There were no Cu-Si intermetallic compounds generated in the Cu/AlCrTaTiZr/AlCrTaTiZr-N/Si film stacks after annealing even at 900 °C through transmission electron microscopy (TEM) and atomic probe tomography (APT) analysis. The results indicated that AlCrTaTiZr/AlCrTaTiZr-N alloy films can prevent copper diffusion at 900 °C. The reason was investigated in this work. The amorphous structure of the AlCrTaTiZr layer has lower driving force to form intermetallic compounds; the lattice mismatch between the AlCrTaTiZr and AlCrTaTiZ-rN layers increased the diffusion distance of the Cu atoms and the difficulty of the Cu atom diffusion to the Si substrate.

Homogeneous Al-Ti and Al-Ti-Si Thin Alloy Films

1985 ◽  
Vol 54 ◽  
Author(s):  
Albertus G. Dirks ◽  
Tien Tien ◽  
Janet M. Towner
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Grain Size ◽  
Electrical Resistivity ◽  
Phase Formation ◽  
Alloy Composition ◽  
Al Alloy ◽  
Second Phase ◽  
Alloy Films ◽  
Microstructure And Properties

ABSTRACTThe microstructure and properties of thin films depends strongly upon the alloy composition. A study was made of the metallurgical aspects of homogeneous Al alloy films, particularly the binary Al-Ti and the ternary Al-Ti-Si systems. Electrical resistivity, grain size morphology, second phase formation and electromigration have been studied as a function of the alloy composition and its heat treatment.

Effects of Annealing and Ion Bombardment on Structure and Composition of Ti-Al Alloy Films

1994 ◽  
Vol 1-2 ◽  
pp. 391-398 ◽  
Author(s):  
M. Fahoume ◽  
M. El Khamlichi ◽  
C. Baltzinger ◽  
C. Burggraf
Keyword(s):  
Ion Bombardment ◽  
Al Alloy ◽  
Alloy Films

Stress evolution during and after sputter deposition of thin Cu–Al alloy films

2008 ◽  
Vol 20 (25) ◽  
pp. 255215 ◽  
Author(s):  
M Pletea ◽  
H Wendrock ◽  
R Kaltofen ◽  
O G Schmidt ◽  
R Koch
Keyword(s):  
Sputter Deposition ◽  
Al Alloy ◽  
Stress Evolution ◽  
Alloy Films

Residual Gas Phase Contamination of Al-Cu Alloy Films and its Effect on Electromigration Behavior

1996 ◽  
Vol 428 ◽  
Author(s):  
Imran Hashim ◽  
Ivo J. Raaijmakers ◽  
Glen Adler ◽  
Ardy Sidhwa ◽  
Sudhir Chopra
Keyword(s):  
Gas Phase ◽  
Physical Vapor Deposition ◽  
Target Material ◽  
Vacuum System ◽  
Al Alloy ◽  
Alloy Films ◽  
Cu Alloy ◽  
Effect Of Impurities ◽  
Residual Gas ◽  
Vacuum Systems

AbstractThe major sources of impurities in sputtered Al alloy films for interconnects, prepared by physical vapor deposition include those originating from the target material, residual gases present in the vacuum system, and those introduced through the gas delivery system. In this study, we report the effect of impurities incorporated from residual gases present in vacuum systems on the electromigration performance of 0.6 μm wide Al-l%Cu lines. Controlled leaks of isotope gases H2O18, N215, O218, and C13H4, in 10−6 10−9 Torr range, were introduced into a PVD tool during the sputtering process. Using these isotope gases, the impurities originating from residual gases were distinguished from those originating from other sources of impurities. The sputtering target was found to be the major source of H and O impurities in the film, whereas N atoms are introduced in the film mainly through the gas phase. Furthermore, N atoms in the film were found to affect its electromigration behaviour to a larger extent than O and H.

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