Microstructure and Lifetime Study of Al/Y Films

1998 ◽  
Vol 514 ◽  
Author(s):  
L. Vedula ◽  
V. Pillai ◽  
V. S. Nimmagadda ◽  
R. Singh ◽  
K. F. Poole ◽  
...  
Keyword(s):  
Grain Size ◽  
Magnetron Sputtering ◽  
Current Density ◽  
Size Variation ◽  
Residual Resistivity ◽  
Time To Failure ◽  
Furnace Annealing ◽  
Mean Time ◽  
A Current ◽  
Si Wafer

ABSTRACTThin Al films alloyed with three different compositions (0.1%, 1%, 5% by weight) of Yttrium were deposited by D.C. Magnetron Sputtering onto oxidized Si wafer substrates. The samples were furnace annealed at 425 °C for 30 minutes. Resistivity measured for the as-deposited and annealed Al(0. lwt% Y) were 3.07 and 2.57+/−0.25 μΩcm respectively. Al(0. lwt% Y) was also annealed by furnace annealing (FA), rapid thermal annealing (RTA) and rapid photothermal annealing (RPA). RPA gave a residual resistivity of 2.67μΩcm in 5 minutes and at a temperature of 350 C for Al(0. lwt% Y). Mean time to failure for AI(0. lwt% Y) samples at a current density of 3.2+/−0.5×106A/cm2 at 30 C was 50 hours. TEM results showed grain size variation from 0.5 to 2 μm.

Effect of Bump Shape on Current Density and Temperature Distributions in Solder Bump Joints under Electromigration

2012 ◽  
Vol 569 ◽  
pp. 82-87
Author(s):  
Yi Li ◽  
Xiu Chen Zhao ◽  
Ying Liu ◽  
Hong Li
Keyword(s):  
Current Density ◽  
Solder Bump ◽  
Three Dimensional ◽  
Maximum Temperature ◽  
Time To Failure ◽  
Element Analysis ◽  
Temperature Distributions ◽  
Maximum Current ◽  
Mean Time ◽  
Waist Radius

Three dimensional thermo-electrical finite element analysis was employed to simulate the current density and temperature distributions for solder bump joints with different bump shapes. Mean-time-to-failure (MTTF) of electromigration was discussed. It was found that as the bump volume increased from hourglass bump to barrel bump, the maximum current density increased but the maximum temperature decreased. Hourglass bump with waist radius of 240 μm has the longest MTTF.

Lead-Free and PbSn Bump Electromigration Testing

2005 ◽  
Author(s):  
Stephen Gee ◽  
Nikhil Kelkar ◽  
Joanne Huang ◽  
King-Ning Tu
Keyword(s):  
Cross Sections ◽  
Current Density ◽  
Critical Issue ◽  
Electronics Industry ◽  
Limiting Factor ◽  
Time To Failure ◽  
Solder Bumps ◽  
Free Solder ◽  
Mean Time ◽  
Eutectic Snpb

As the electronics industry continues to push for miniaturization, several reliability factors become vital issues. The demand for a high population of smaller and smaller solder bumps, while also increasing the current, have resulted in a significant increase in the current density. As outlined in the International Technology of Roadmap for Semiconductors (ITRS), this trend makes electromigration the limiting factor in high density packages. The heightened current density and correspondingly elevated operating temperatures are a critical issue in reliability since these factors facilitate the effects of electromigration. Therefore, as bump sizes continue to decrease, the study of electromigration reliability becomes crucial in order to understand and possibly prevent the causes of failure. A systematic study of electromigration in eutectic SnPb and Pb-free solder bumps was conducted in order to characterize the reliability of the Micro SMD package family. The testing includes both eutectic 63Sn-37Pb and 95.5Sn4.0Ag-0.5Cu solder bumps on an Al/Ni(V)/Cu under-bump-metallization. Mean-time-to-failure results are compared to Black’s Equation and cross-sections of the solder bumps are shown to analyze the mechanisms that led to failure.

Electromigration in Submicron Wide Copper Lines

1996 ◽  
Vol 427 ◽  
Author(s):  
O. V. Kononenko ◽  
V. N. Matveev ◽  
Yu. I. Koval ◽  
S. V. Dubonos ◽  
V. T. Volkov
Keyword(s):  
Activation Energy ◽  
Current Density ◽  
Silicon Oxide ◽  
Parallel Line ◽  
Silicon Wafers ◽  
The Self ◽  
Copper Films ◽  
Time To Failure ◽  
Electron Lithography ◽  
A Current

AbstractCopper films were deposited onto oxidized silicon wafers by the self-ion assisted technique. A 0 and 6 kV bias was applied to the substrate during the deposition. The films were patterned into parallel line arrays of 20 lines 0.5 mm long, using electron lithography and dry etching. After patterning, the lines were covered by silicon oxide and annealed in vacuum for 1 hour at the temperature 450° C. Electromigration testing was performed in air in the temperature range from 280° to 350° C and at a current density 3.106 A/cm2.It was found that the resistivities of the films deposited at 6 kV and without bias were 1.7 and 2.0 μΩcm, respectively. The median times to failure are 398.6 and 240 h and the deviations in the time to failure are 0.8 and 0.54 for 6 kV lines and 0 kV lines, respectively. An electromigration activation energy of 0.89 eV was found for 0 kV films.

Hierarchical three-dimensional MnO nanorods/carbon anodes for ultralong-life lithium-ion batteries

2016 ◽  
Vol 4 (43) ◽  
pp. 16936-16945 ◽  
Author(s):  
Wei Zhang ◽  
Jinzhi Sheng ◽  
Jie Zhang ◽  
Ting He ◽  
Lin Hu ◽  
...  
Keyword(s):  
Lithium Ion Batteries ◽  
Current Density ◽  
Three Dimensional ◽  
Size Variation ◽  
Lithium Ion ◽  
Capacity Retention ◽  
Carbon Anodes ◽  
Carbon Network ◽  
A Current

N-Doped carbon network encapsulated MnO nanorods demonstrate 95% capacity retention at a current density of 4000 mA g−1for 3000 cycles. In this case, almost no pulverization or size variation of the nanorods can be observed.

Electromigration in Gold Line of GaAs IC

1998 ◽  
Author(s):  
A. Ohta ◽  
K. Yajima ◽  
N. Higashisaka ◽  
T. Heima ◽  
T. Hisaka ◽  
...  
Keyword(s):  
Activation Energy ◽  
Current Density ◽  
Electron Flow ◽  
Failure Mechanisms ◽  
Cathode Side ◽  
Time To Failure ◽  
Dc Bias ◽  
Molybdenum Surfaces ◽  
Mean Time ◽  
Test Current

Abstract This paper describes voids in a gold line, which is a new failure mechanisms of GaAs IC using gold line as interconnection. We have found voids in both first and second metal under DC bias test, current density of 0.67 to 1.27 106 A/cm2 in high temperature range of 230 °C to 260 °C. We have observed carefully the movement of voids during the test and found that voids moved toward a cathode, in the opposite direction of electron flow. The velocity of voids increased with the current density almost proportionally. The moving mechanisms of a void can be explained by assuming that gold atoms move toward an anode by electromigration. The activation energy of the void velocity was 0.84 eV at the cathode side. This was nearly equal to 0.6 eV - 0.9 eV reported on the velocity of the gold island on molybdenum surfaces [1]. The GaAs IC failed at the almost same time as the voids appeared. The activation energy of mean time to failure of the IC was 0.89 eV, which was nearly equal to that of the void velocity at the cathode edge of 0.84 eV.

Electromigration In Submicron Wide Copper Lines

1996 ◽  
Vol 428 ◽  
Author(s):  
O. V. Kononenko ◽  
V. N. Matveev ◽  
Yu. I. Koval ◽  
S. V. Dubonos ◽  
V. T. Volkov
Keyword(s):  
Activation Energy ◽  
Current Density ◽  
Silicon Oxide ◽  
Parallel Line ◽  
Silicon Wafers ◽  
The Self ◽  
Copper Films ◽  
Time To Failure ◽  
Electron Lithography ◽  
A Current

AbstractCopper films were deposited onto oxidized silicon wafers by the self-ion assisted technique. A 0 and 6 kV bias was applied to the substrate during the deposition. The films were patterned into parallel line arrays of 20 lines 0.5 mm long, using electron lithography and dry etching. After patterning, the lines were covered by silicon oxide and annealed in vacuum for 1 hour at the temperature 450° C. Electromigration testing was performed in air in the temperature range from 280° to 350° C and at a current density 3.106 A/cm2.It was found that the resistivities of the films deposited at 6 kV and without bias were 1.7 and 2.0 μΩ-cm, respectively. The median times to failure are 398.6 and 240 h and the deviations in the time to failure are 0.8 and 0.54 for 6 kV lines and 0 kV lines, respectively. An electromigration activation energy of 0.89 eV was found for 0 kV films.

Novel magneto-optical recording materials: Bi-substituted garnet films

1991 ◽  
Vol 49 ◽  
pp. 776-777
Author(s):  
Takao Suzuki ◽  
Hossein Nuri
Keyword(s):  
Grain Size ◽  
Amorphous Film ◽  
Nitrogen Atmosphere ◽  
Optical Recording ◽  
Garnet Film ◽  
Media Noise ◽  
Garnet Films ◽  
Order Of Magnitude ◽  
A New Technique ◽  
A Current

For future high density magneto-optical recording materials, a Bi-substituted garnet film ((BiDy)3(FeGa)5O12) is an attractive candidate since it has strong magneto-optic effect at short wavelengths less than 600 nm. The signal in read back performance at 500 nm using a garnet film can be an order of magnitude higher than a current rare earth-transition metal amorphous film. However, the granularity and surface roughness of such crystalline garnet films are the key to control for minimizing media noise.We have demonstrated a new technique to fabricate a garnet film which has much smaller grain size and smoother surfaces than those annealed in a conventional oven. This method employs a high ramp-up rate annealing (Γ = 50 ~ 100 C/s) in nitrogen atmosphere. Fig.1 shows a typical microstruture of a Bi-susbtituted garnet film deposited by r.f. sputtering and then subsequently crystallized by a rapid thermal annealing technique at Γ = 50 C/s at 650 °C for 2 min. The structure is a single phase of garnet, and a grain size is about 300A.

Facet Topography and Dislocation Structure as a Possible Source for Electrical Heterogeneity in [001] TILT Bicrystals of YBa2Cu3O7-δ

1996 ◽  
Vol 54 ◽  
pp. 338-339
Author(s):  
I-Fei Tsu ◽  
D.L. Kaiser ◽  
S.E. Babcock
Keyword(s):  
Grain Boundary ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Electromagnetic Properties ◽  
Length Scale ◽  
Density Values ◽  
Current Densities ◽  
Applied Fields ◽  
A Current

A current theme in the study of the critical current density behavior of YBa2Cu3O7-δ (YBCO) grain boundaries is that their electromagnetic properties are heterogeneous on various length scales ranging from 10s of microns to ˜ 1 Å. Recently, combined electromagnetic and TEM studies on four flux-grown bicrystals have demonstrated a direct correlation between the length scale of the boundaries’ saw-tooth facet configurations and the apparent length scale of the electrical heterogeneity. In that work, enhanced critical current densities are observed at applied fields where the facet period is commensurate with the spacing of the Abrikosov flux vortices which must be pinned if higher critical current density values are recorded. To understand the microstructural origin of the flux pinning, the grain boundary topography and grain boundary dislocation (GBD) network structure of [001] tilt YBCO bicrystals were studied by TEM and HRTEM.

A highly stable CoMo2S4/Ni3S2 heterojunction electrocatalyst for efficient hydrogen evolution

2021 ◽  
Author(s):  
Minmin Wang ◽  
Mengke Zhang ◽  
Wenwu Song ◽  
Weiting Zhong ◽  
Xunyue Wang ◽  
...  
Keyword(s):  
Hydrogen Evolution ◽  
Current Density ◽  
A Current

A CoMo2S4/Ni3S2 heterojunction is prepared with an overpotential of only 51 mV to drive a current density of 10 mA cm−2 in 1 M KOH solution and ∼100% of the potential remains in the ∼50 h chronopotentiometric curve at 10 mA cm−2.

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