Trapping of Interstitials During Ion Implantation In Silicon

1985 ◽  
Vol 51 ◽  
Author(s):  
R.J. Culbertson ◽  
S.J. Pennycook
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficient ◽  
Solid Phase ◽  
Tracer Diffusion ◽  
Dislocation Loops ◽  
Loop Formation ◽  
Group V ◽  
Interstitial Concentration ◽  
Implantation Process ◽  
Dopant Atoms

ABSTRACTThe solid phase epitaxial regrowth of silicon implanted with a group V dopant, such as antimony, results in excellent incorporation of the dopant atoms into silicon lattice sites. However, annealing at higher temperatures or longer times results in transient dopant precipitation with a diffusion coefficient up to five orders of magnitude above that of tracer diffusion and with a reduced activation energy.This precipitation is accompanied by the nucleation of dislocation loops that are interstitial in nature, and the transient ceases as the dislocation loops develop. It is believed that Si interstitials are trapped in a stable defect complex during the implantation process.Although they survive SPE these complexes dissolve at higher temperatures and release a large supply of interstitials which serve to promote dopant migration via an interstitialcy mechanism until they condense to form the observed dislocation loops. By following the Sb implantation with an implantation of B to an equivalent concentration profile the loop formation is efficiently suppressed. For higher B concentrations the Sb precipitation is no longer observed. Results for As implantation are similar to Sb except that As precipitates can not be directly observed. Calculations of the dopant and interstitial concentration depth distributions were also performed.

Fe tracer diffusion in L10 ordered FePt

2002 ◽  
Vol 753 ◽  
Author(s):  
Y. Nosé ◽  
T. Ikeda ◽  
H. Nakajima ◽  
K. Tanaka ◽  
H. Numakura
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficient ◽  
Single Crystal ◽  
Diffusion Coefficients ◽  
Ion Beam ◽  
Tracer Diffusion ◽  
Ordered Structure ◽  
Tracer Diffusion Coefficient ◽  
Exponential Factor ◽  
Axis Direction

ABSTRACTTracer diffusion coefficient of 59Fe in FePt with the tetragonal L10 ordered structure has been measured by an ion-beam sputter-sectioning technique in the temperature range from 1173 to 1374 K. Anisotropy in diffusion has been studied using single-variant single-crystal specimens. The diffusion coefficient in the direction perpendicular to [001] axis (in the a-axis direction), Da, is larger than that in the [001] (c-axis) direction, Dc, as expected from the atomic arrangement of the L10 ordered structure. The ratio of the diffusion coefficients, Da/Dc, is 1.33.6 for Fe42Pt58 and smaller at higher temperatures. The activation energy for the diffusion is 259 ± 1 kJ/mol for Da and 309 ± 18 kJ/mol for Dc, while the pre-exponential factor is and , respectively in Fe42Pt58.

Diffusion of 57Co in amorphous Fe–RE (RE = Dy, Tb, and Ce) and Fe–Si–B alloys

1993 ◽  
Vol 8 (9) ◽  
pp. 2231-2238 ◽  
Author(s):  
Kazumasa Yamada ◽  
Yoshiaki Iijima ◽  
Kazuaki Fukamichi
Keyword(s):  
Activation Energy ◽  
Diffusion Coefficient ◽  
Temperature Dependence ◽  
Tracer Diffusion ◽  
Atomic Size ◽  
Exponential Factor ◽  
Dc Sputtering ◽  
The Matrix ◽  
Diffusion Temperature ◽  
Order Of Magnitude

Tracer diffusion of 57Co in amorphous Fe100−xDyx (x = 20–40), Fe75Tb25, Fe67Ce33, and Fe80Si6B14 alloys prepared by dc sputtering has been studied at temperatures of 523 and 573 K. In the Fe–Dy alloys the diffusion coefficient of 57Co shows a maximum at 33 at.% Dy. The magnitude of the diffusion coefficient of 57Co in Fe75Tb25 is nearly equal to that in Fe75Dy25, while those in Fe67Ce33 and Fe80Si6B14 are about one order of magnitude less than the values in Fe67Dy33 and Fe80Dy20. This suggests that the atomic size of the diffusant and the density of the matrix are dominant in the diffusion. Temperature dependence of the diffusion coefficient D of 57Co in the amorphous Fe75Dy25 alloy has been determined in the range from 493–673 K. It shows a linear Arrhenius relationship expressed by D = 5.7 × 10−2 exp(−199 kJ mol−1/RT) m2 s−1. The magnitudes of the pre-exponential factor and the activation energy suggest that the cobalt tracer atoms in the amorphous Fe75Dy25 alloy diffuse by an interstitial-like mechanism.

scholarly journals Transient Enhanced Diffusion and Gettering of Dopants in Ion Implanted Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
R. J. Culbertson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Subsequent Annealing ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Profile ◽  
Dopant Atoms ◽  
Ion Implanted

ABSTRACTWe have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As+ implanted Si.

Formation of stable dopant interstitials during ion implantation of silicon

1986 ◽  
Vol 1 (3) ◽  
pp. 476-492 ◽  
Author(s):  
S.J. Pennycook ◽  
R.J. Culbertson ◽  
J. Narayan
Keyword(s):  
Ion Implantation ◽  
Direct Evidence ◽  
Solid Phase ◽  
Diffusion Mechanism ◽  
Transient Effects ◽  
Group V ◽  
Group Iii ◽  
Enhanced Diffusion ◽  
High Concentrations ◽  
Dopant Atoms

High concentrations of self-interstitials are trapped by dopant atoms during ion implantation into Si. For group V dopants, these complexes are sufficiently stable to survive solid-phase-epitaxial (SPE) growth but break up on subsequent thermal processing and cause a transientenhanced diffusion. Dopant diffusion coefficients are enhanced by up to five orders of magnitude over tracer values and are characterized by an activation energy of approximately one half of the tracer values. In the case of group III dopants, any complexes formed during implantation do not survive SPE growth but a second source of self-interstitials becomes significant and leads to similar transient effects. This is the damaged layer underlying the original amorphous/crystalline interface. These observations provide direct evidence for longrange self-interstitial migration in Si, and we believe these are the first observations of the interstitialcy diffusion mechanism with no vacancy contribution. We propose that the complexes are simply interstitial dopant atoms (in a split <100> interstitialcy configuration) that are particularly stable in the case of group V dopants. As they decay self-interstitials are released and cause the transient-enhanced diffusion.

Point Defect Absorption and Dislocation Loop Formation at Grain Boundaries in Hvem-Irradiated Zr and Its Alloys:1. Influence of Solute Addition

1985 ◽  
Vol 43 ◽  
pp. 350-351
Author(s):  
R.A. Herring ◽  
M. Griffiths ◽  
M.H Loretto ◽  
R.E. Smallman
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Point Defect ◽  
Reactor Core ◽  
Solute Concentration ◽  
Nuclear Industry ◽  
Dislocation Loops ◽  
Loop Formation ◽  
Component Material ◽  
Impurity Interaction

Because Zr is used in the nuclear industry to sheath fuel and as structural component material within the reactor core, it is important to understand Zr's point defect properties. In the present work point defect-impurity interaction has been assessed by measuring the influence of grain boundaries on the width of the zone denuded of dislocation loops in a series of irradiated Zr alloys. Electropolished Zr and its alloys have been irradiated using an AEI EM7 HVEM at 1 MeV, ∼675 K and ∼10-6 torr vacuum pressure. During some HVEM irradiations it has been seen that there is a difference in the loop nucleation and growth behaviour adjacent to the grain boundary as compared with the mid-grain region. The width of the region influenced by the presence of the grain boundary should be a function of the irradiation temperature, dose rate, solute concentration and crystallographic orientation.

Lithium tracer diffusion in LiNi0.33Mn0.33Co0.33O2 cathode material for lithium-ion batteries

2021 ◽  
Vol 23 (10) ◽  
pp. 5992-5998
Author(s):  
Daniel Uxa ◽  
Helen J. Holmes ◽  
Kevin Meyer ◽  
Lars Dörrer ◽  
Harald Schmidt
Keyword(s):  
Activation Energy ◽  
Cathode Material ◽  
Lithium Ion Batteries ◽  
Lithium Ion ◽  
Tracer Diffusion ◽  
Arrhenius Law

Lithium tracer diffusivities in LiNi0.33Mn0.33Co0.33O2 cathode material for lithium-ion batteries follows the Arrhenius law with an activation energy of 0.85 eV.

scholarly journals Surface Thermodynamics, Viscosity, Activation Energy of N-Methyldiethanolamine Aqueous Solutions Promoted by Tetramethylammonium Arginate

Entropy ◽  
2020 ◽  
Vol 22 (12) ◽  
pp. 1337
Author(s):  
Xiangfeng Tian ◽  
Lemeng Wang ◽  
Pan Zhang ◽  
Dong Fu
Keyword(s):  
Activation Energy ◽  
Surface Tension ◽  
Diffusion Coefficient ◽  
Aqueous Solutions ◽  
Quantitative Relationship ◽  
Viscosity Data ◽  
Surface Thermodynamics ◽  
Surface Entropy ◽  
Operation Conditions ◽  
Surface Enthalpy

The surface tension and viscosity values of N-methyldiethanolamine (MDEA) aqueous solutions promoted by tetramethylammonium arginate ([N1111][Arg]) were measured and modeled. The experimental temperatures were 303.2 to 323.2 K. The mass fractions of MDEA (wMDEA) and [N1111][Arg] (w[N1111][Arg]) were 0.300 to 0.500 and 0.025 to 0.075, respectively. The measured surface tension and viscosity values were satisfactorily fitted to thermodynamic models. With the aid of experimentally viscosity data, the activation energy (Ea) and H2S diffusion coefficient (DH2S) of MDEA-[N1111][Arg] aqueous solution were deduced. The surface entropy and surface enthalpy of the solutions were calculated using the fitted model of the surface tension. The quantitative relationship between the calculated values (surface tension, surface entropy, surface enthalpy, viscosity, activation energy, and H2S diffusion coefficient) and the operation conditions (mass fraction and temperature) was demonstrated.

scholarly journals A Study of the Impact of Graphite on the Kinetics of SPS in Nano- and Submicron WC-10%Co Powder Compositions

Ceramics ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 331-363
Author(s):  
Eugeniy Lantcev ◽  
Aleksey Nokhrin ◽  
Nataliya Malekhonova ◽  
Maksim Boldin ◽  
Vladimir Chuvil'deev ◽  
...  
Keyword(s):  
Activation Energy ◽  
Solid Phase ◽  
Continuous Heating ◽  
Diffusion Creep ◽  
Hard Alloys ◽  
Fine Grained ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
The Impact ◽  
Kinetics Of

This study investigates the impact of carbon on the kinetics of the spark plasma sintering (SPS) of nano- and submicron powders WC-10wt.%Co. Carbon, in the form of graphite, was introduced into powders by mixing. The activation energy of solid-phase sintering was determined for the conditions of isothermal and continuous heating. It has been demonstrated that increasing the carbon content leads to a decrease in the fraction of η-phase particles and a shift of the shrinkage curve towards lower heating temperatures. It has been established that increasing the graphite content in nano- and submicron powders has no significant effect on the SPS activation energy for “mid-range” heating temperatures, QS(I). The value of QS(I) is close to the activation energy of grain-boundary diffusion in cobalt. It has been demonstrated that increasing the content of graphite leads to a significant decrease in the SPS activation energy, QS(II), for “higher-range” heating temperatures due to lower concentration of tungsten atoms in cobalt-based γ-phase. It has been established that the sintering kinetics of fine-grained WC-Co hard alloys is limited by the intensity of diffusion creep of cobalt (Coble creep).

Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan ◽  
G. L. Olson ◽  
O. W. Holland
Keyword(s):  
Laser Power ◽  
Solid Phase ◽  
Solute Segregation ◽  
Dislocation Loops ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Plan View ◽  
Ion Channeling ◽  
Retrograde Solubility ◽  
Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

Electrical Conductivity of Magnesium Oxide/Molten Carbonate Eutectic Coexisting System

2019 ◽  
Vol 74 (9) ◽  
pp. 739-742
Author(s):  
Elena V. Nikolaeva ◽  
Andrey L. Bovet ◽  
Irina D. Zakiryanova
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Magnesium Oxide ◽  
Solid Phase ◽  
Specific Conductivity ◽  
Maxwell Model ◽  
Impedance Method ◽  
Molten Carbonate ◽  
Carbonate Ions ◽  
Alkali Carbonate

AbstractThe electrical conductivity of molten ternary alkali carbonate eutectic, coexisting with MgO particles, has been investigated. The conductivity was measured by the AC impedance method. The apparent activation energy ΔEa increased with the MgO content. This fact can be attributed to the effect of the solid phase. The specific conductivity of those systems could not be described using the Maxwell model over the solvation process of the carbonate ions on the particles of the magnesium oxide.

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