Carbon Nanotube-Based Vacuum Microelectronic Gated Cathode
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AbstractA vacuum microelectronic device containing carbon nanotube electron field-emitters was developed and tested. The gated cathode was fabricated using conventional microelectronics fabrication techniques and a final, self-aligned, in situ carbon nanotube growth step. To our knowledge, this is the first vacuum microelectronics device with carbon nanotube field-emitters grown in situ with a catalytic growth process. The turn-on voltage of the cathode was less than 20 volts and the emission current density at 50 volts was as high as 9 mA-cm−2. The fabrication process, device performance, manufacturing issues and cathode applications will be discussed.
2010 ◽
Vol 19
(5-6)
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pp. 581-585
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2004 ◽
Vol 10
(S02)
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pp. 368-369
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2006 ◽
Vol 38
(12-13)
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pp. 1743-1746
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