Effect of Plasma Treatment on Crystallization Behavior of Amorphous Silicon Films

1998 ◽  
Vol 507 ◽  
Author(s):  
K. Pangal ◽  
J.C. Sturm ◽  
S. Wagner
Keyword(s):  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Parallel Plate ◽  
Room Temperature ◽  
Crystallization Behavior ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Silicon On Insulator ◽  
Crystallization Time ◽  
Plasma Exposure

ABSTRACTThe crystallization of amorphous silicon (a-Si:H) deposited by plasma enhanced chemical vapor deposition (PECVD) by thermal annealing is of great interest for display and silicon-on-insulator (SOI) technologies, though long anneal times (about 20 hrs) at 600 °C are typically required. We report that a room temperature hydrogen plasma exposure in a parallel plate diode type Reactive Ion Etcher (RIE) can reduce this crystallization time by a factor of five. This plasma enhanced crystallization can be spatially controlled by masking with patterned oxide, so that both amorphous and polycrystalline areas can be realized simultaneously at desired locations. This effect is due to the creation of seed nuclei at the surface, which enhance crystallization rates.

Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires

2005 ◽  
Vol 23 ◽  
pp. 137-140
Author(s):  
X.B. Zeng ◽  
X.B. Liao ◽  
S.T. Dai ◽  
B. Wang ◽  
Y.Y. Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Boron Doped ◽  
Doped Silicon ◽  
81.15 Gh

Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm-1,which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev,1.42ev,1.47ev. Possible reason for these is suggested. PACS: 36.40._c; 81.15.Gh; 81.20._n

Nitride-Based Thin-Film Cold Cathode Emitters

1996 ◽  
Vol 449 ◽  
Author(s):  
James A Christman ◽  
Andrew T Sowers ◽  
Michael D Bremser ◽  
Brandon L Ward ◽  
Robert F Davis ◽  
...  
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Cold Cathode ◽  
Plasma Exposure ◽  
Cold Cathodes ◽  
Metalorganic Chemical

ABSTRACTCold cathodes have been fabricated using two different nitride structures as a thin film emitting layer. The A1N and graded AlGaN structures are prepared by metalorganic chemical vapor deposition (MOCVD) on an n-type 6H-SiC substrate. Individual aluminum grids are perforated with an array of either 1, 3, or 5μm holes through which the emitting surface is exposed. After device fabrication, a hydrogen plasma exposure was found to be necessary to activate the cathode. The devices have displayed a limited lifetime and a small percentage of the devices operate, although half of the devices with 5μm holes functioned. The highest measured collector currents are 0.1μA for A1N and l0nA for AlGaN at grid voltages of 110V and 20V, respectively. The grid currents are typically 10 to 104 times the collector currents.

Light-Induced Increase in Two-Level Tunneling States in Hydrogenated Amorphous Silicon

1999 ◽  
Vol 557 ◽  
Author(s):  
Xiao Liu ◽  
R.O. Pohl ◽  
R.S. Crandall
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Internal Friction ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Hydrogenated Amorphous

AbstractWe observe an increase of the low-temperature internal friction of hydrogenated amorphous silicon prepared by both hot-wire and plasma-enhanced chemical-vapor deposition after extended light-soaking at room temperature. This increase, and the associated change in sound velocity, can be explained by an increase of the density of two-level tunneling states, which serves as a measure of the lattice disorder. The amount of increase in internal friction is remarkably similar in both types of films although the amount and the microstructure of hydrogen are very different. Experiments conducted on a sample prepared by hot-wire chemical-vapor deposition show that this change anneals out gradually at room temperature in about 70 days. Possible relation of the light-induced changes in the low-temperature elastic properties to the Staebler-Wronski effect is discussed.

Room Temperature Process for Chemical Vapor Deposition of Amorphous Silicon Carbide Thin Film Using Monomethylsilane Gas

2012 ◽  
Vol 1433 ◽  
Author(s):  
Hitoshi Habuka ◽  
Yusuke Ando ◽  
Masaki Tsuji
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Argon Plasma ◽  
Chemical Vapor ◽  
Amorphous Silicon Carbide

ABSTRACTThe silicon carbide thin film formation process, completely performed at room temperature, was developed by argon plasma and a chemical vapor deposition using monomethylsilane gas. Time-of-flight secondary ion mass spectrometry showed that siliconcarbon bonds existed in the obtained film, the surface of which could remain specular after the exposure to hydrogen chloride gas at 800 °C. The silicon dangling bonds formed at the silicon surface by the argon plasma are considered to easily accept the monomethylsilane molecules at room temperature to produce the amorphous silicon carbide film.

Inert Gas Dilution and Ion Bombardment Effects in Room Temperature (35°C) Plasma Deposition of a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
Easwar Srinivasan ◽  
Daniel A. Lloyd ◽  
Ming Fang ◽  
Gregory N. Parsons
Keyword(s):  
Vapor Deposition ◽  
Parallel Plate ◽  
Room Temperature ◽  
Defect Density ◽  
Plasma Deposition ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Inert Gas ◽  
High Defect Density ◽  
Gas Dilution

AbstractPlasma enhanced chemical vapor deposition (PECVD) of a-Si:H with silane or silane and hydrogen at temperatures lower than 200°C commonly results in films with significant dihydride bonding and a high defect density. In this paper, we demonstrate the formation of monohydride dominant a-Si:H films using rf parallel plate PECVD at 35°C at deposition rates greater than 100 Å/min. In the as-deposited state, these films have low dark conductivity (∼10−9 S/cm) and low photoconductivity. Annealing the films at 150°C caused the monohydride dominant films to show photo to dark conductivity ratio near 105. Our results also indicate that an increase in monohydride fraction is not linked with a decrease in deposition rate.

Control of Amorphous Silicon Crystallization Using Germanium Deposited by Low Pressure Chemical Vapor Deposition

2000 ◽  
Vol 609 ◽  
Author(s):  
Masato Toita ◽  
Pranav Kalavade ◽  
Krishna C. Saraswat
Keyword(s):  
Activation Energy ◽  
Amorphous Silicon ◽  
Incubation Time ◽  
Vapor Deposition ◽  
Crystallization Behavior ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Amorphous Silicon Film ◽  
Pressure Chemical ◽  
Si Films

ABSTRACTCrystallization behavior of 100nm amorphous silicon film with and without a 160nm poly-Ge layer on top was investigated. Ge was observed to increase the nucleation rate as well as to increase the incubation time for nucleation in a-Si. Activation energy for nucleation was 2.3eV for Ge-covered Si films as compared to 2.7eV for the control a-Si films with no poly-Ge. Activation energy for incubation is almost unchanged for both the films (-3.3eV). An alternative seeding technique for a-Si films using the increase in the incubation time for nucleation due to presence of poly-Ge is proposed.

scholarly journals Graphene Trails on PECVD Hydrogenated Amorphous Silicon Carbide Films SiC-a: H by Laser Writing at Room Temperature

2020 ◽  
Vol 15 (2) ◽  
pp. 1-4
Author(s):  
Deissy Johanna Feria ◽  
Marcelo Carreño ◽  
Ricardo Rangel ◽  
Ines Pereyra
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Quality ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous

The production of high quality graphene without the need for catalyst metals as in the case of chemical vapor deposition (CVD) techniques remain a challenge. Silicon carbide is one of the materials with potential to form graphene films on its surface through thermal decomposition when subjected to high temperatures and ultrahigh vacuum. This technique is highly desirable since it enables the elimination of corrosion and transfer steps, which can leave residues in the graphene structure and alter its quality, as well as its electrical proprieties, however it is a costly and time consuming method. In this work, we present the production of graphene trails by direct laser radiation writing at room temperature and atmospheric pressure on hydrogenated amorphous silicon carbide films (SiC-a:H) produced by Plasma Enhanced Chemical Vapor Deposition (PECVD).  Graphene trails of approximately 1cm x 4μm were obtained with patterns designed by computer Aided Design (CAD) software. Variations were made in both scanning speed and laser focal length, identifying a great dependence on the graphene quality with these two parameters. The best results of the Raman Spectroscopy Mappings showed high quality graphene with distance between point defects (LD) of 20nm, crystallite size (La) of 25nm and few layers (2-3). In addition, the electrical measurements from Au/Ti (20nm/100nm) electrodes deposited by electron beam evaporation showed high conductivity, with sheet resistances (Rs) from 0.7kΩ to 1.3 kΩ per square. This technique opens a great possibility of manufacturing devices for applications in electronics, being a fast, efficient and low cost method.

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