Investigation of a-Si:H PH(1)N Color Detector Operation

1998 ◽  
Vol 507 ◽  
Author(s):  
M. Topiĉ ◽  
F. Smole ◽  
J. Furlan
Keyword(s):  
Spectral Response ◽  
Transparent Conducting Oxide ◽  
Light Sensitivity ◽  
Strong Negative Correlation ◽  
Rejection Ratio ◽  
Color Separation ◽  
Transparent Conducting ◽  
Color Detection ◽  
Simulation Results ◽  
Numerical Simulator

ABSTRACTUsing numerical simulator, the operational principle of two-terminal a-Si:H based three-color detectors with the multi-layer multi-bandgap PIN or PIIiN structure is investigated. Two different approaches, which lead to bias-controlled three-color detection, are described and evaluated in terms of spectral response, rejection ratio, color suppression, illumination intensity and bias-light. For both PIIN and PIIN structure, bias-light dependence and intensity dependence is investigated. Numerical simulation results showed strong negative correlation between color separation and bias-light sensitivity. The importance of the transparent conducting oxide for the three-color detection limits is demonstrated.

Fast Color Detection with Two-Terminal P-I-I-N Devices

1996 ◽  
Vol 420 ◽  
Author(s):  
T. Neidlinger ◽  
M. B. Schubert ◽  
G. Schmid ◽  
H. Brummack
Keyword(s):  
Dynamic Range ◽  
Spectral Response ◽  
Hole Transport ◽  
Color Sensor ◽  
Color Separation ◽  
Color Detection ◽  
Color Sensors ◽  
Voltage Transients ◽  
Different Color ◽  
Electric Field Profile

AbstractIn order to overcome the intrinsic speed limitation of amorphous silicon nipin color sensors we present an alternative way of achieving bias-controlled spectral sensitivity of two-terminal thin film devices, piin structures with appropriate band gap and thickness of their single layers can be used as photodetectors that are able to sequentially extract different color signals. Color separation is achieved by controlling the absorption and electric field profile across these piin devices, and thanks to the differences in electron and hole transport properties. Because in contrast to nipin devices there is no need for reverting readout voltages for color separation, this type of sensors can be operated at much higher readout frequencies. Spectral response and bias voltage transients have been analysed up to 20kHz, and preliminiary data are presented on the optimization of speed, dynamic range and color separation by varying bandgap and thickness of p- and i-layers. Furthermore a three-color sensor has been realized by introducing an additional intrinsic layer.

Influence of Transparent Conducting Oxide on Amorphous Silicon Solar Cell Performance

1986 ◽  
Vol 70 ◽  
Author(s):  
Chris Walker ◽  
Russell Hollingsworth ◽  
Joe del Cueto ◽  
Arun Madan
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Spectral Response ◽  
Transparent Conducting Oxide ◽  
Electrical Contacts ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Conducting Oxides ◽  
Amorphous Silicon Solar Cell ◽  
Transparent Conducting

The use of transparent conducting oxides (TCO) as electrical contacts in a-Si:H solar cells has stimulated interest in the multitude of effects that these layers have on a-Si:H solar cell performance. The study of a-Si:H p-i-n junctions using a TCO contact involves many factors such as, interdiffusion, transmission, reflection, and resistivity. In this paper, we attempt to distinguish between these factors through the role they play in determining the solar cell device performance. Devices were characterized via dark and illuminated current vs. voltage (I-V) measurements, and spectral response. It was found that the properties of the TCO have an important role in influencing FF and Jsc in the devices.

scholarly journals Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

2018 ◽  
Vol 2 (4) ◽  
Author(s):  
D. Ali ◽  
M. Z. Butt ◽  
C. Coughlan ◽  
D. Caffrey ◽  
I. V. Shvets ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Transparent Conducting Oxide ◽  
Transparent Conducting ◽  
Doped Zno

Insituinvestigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces

1989 ◽  
Vol 54 (21) ◽  
pp. 2088-2090 ◽  
Author(s):  
B. Drevillon ◽  
Satyendra Kumar ◽  
P. Roca i Cabarrocas ◽  
J. M. Siefert
Keyword(s):  
Amorphous Silicon ◽  
Transparent Conducting Oxide ◽  
Optoelectronic Properties ◽  
Transparent Conducting

Microstructure and Electrical Properties of AZO Films Prepared by RF Magnetron Sputtering

2011 ◽  
Vol 264-265 ◽  
pp. 754-759 ◽  
Author(s):  
Bakri Jufriadi ◽  
Agus Geter E. Sutjipto ◽  
R. Othman ◽  
R. Muhida
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Transparent Conducting Oxide ◽  
Rf Magnetron Sputtering ◽  
Flat Panel Displays ◽  
Emi Shielding ◽  
Transparent Conducting ◽  
Deposition Processes ◽  
Electro Magnetic ◽  
Static Discharge

AZO is an ideal replacement transparent conducting oxide (TCO) for ITO to all corresponding applications. The typical applications include: transparent electrodes for solar cells, flat panel displays, LCD electrodes, electro-magnetic compatibility (RF-EMI shielding) coatings, touch panel transparent contacts, static discharge dissipation. The production of useful and commercially attractive thin films using different deposition processes is very important parameter to investigate. A systematic study of the sputtering condition and their influenced on electrical and structural were studied. In this work, AZO films were deposited by RF magnetron sputtering at 200 °C. The result shows that the deposited time has influenced the characteristic of deposited AZO films. For a longer deposition time, thin film shows a uniform grain growth. The resistivity found minimum at the deposition time of 45 minutes. It can be considered that by reducing of the grain boundaries which enable the electron carries to conduct smoothly.

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