Electric Field Profile in Jic-Si:H P-I-N Devices

1998 ◽  
Vol 507 ◽  
Author(s):  
N. Wyrsch ◽  
N. Beck ◽  
J. Meier ◽  
P. Torres ◽  
A. Shah
Keyword(s):  
Electric Field ◽  
Physical Functioning ◽  
Spectral Response ◽  
Forward Bias ◽  
Charge Collection ◽  
Field Profile ◽  
Microcrystalline Silicon ◽  
Forward Bias Voltage ◽  
Electric Field Profile ◽  
Insight Into

ABSTRACTSolar cells based on microcrystalline silicon (ptc-Si:H) have demonstrated remarkable efficiencies and have been successfully incorporated in tandem structures; however, little work has so far been devoted to the understanding of these devices. The objective of this paper is to obtain more insight into their physical functioning by extensive characterisation of μc-Si:H devices. Charge-collection experiments shows that high electric field E(x) is present throughout the entire i-layer of thick p-i-n device. Furthermore, from capacitance studies, one concludes that the electric field profile is partly concentrated at grain boundaries. In contrast with these two observations, spectral response under forward bias voltage show that thick [tc-Si:H p-i-n devices are (unlike a-Si:H p-i-n devices) not fully field-controlled.

Internal Electric Field Profile in Thin Film Hydrogenated Amorphous Silicon Diodes Studied by the Transient-Null-Current Method

1997 ◽  
Vol 467 ◽  
Author(s):  
Daxing Han ◽  
Chenan Yeh ◽  
Keda Wang ◽  
Qiwang
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Space Charge ◽  
Forward Bias ◽  
Current Method ◽  
Internal Field ◽  
Total Charge ◽  
Internal Electric Field ◽  
Field Profile ◽  
Electric Field Profile

ABSTRACTWe demonstrate that the internal field of a thin a-Si:H pin solar cells can be measured using the transient-null-current method. This method was previously developed to measure the internal field profile in a-Si alloy Schottky barrier. The internal electric field profile was determined by measuring the forward-bias voltages that tune the transient photocurrents generated by a pulsed laser at a various wavelengths to zero. We adopt the same technique to a-Si:H p-i-n solar cells. In the case of p-i-n structure, we need to consider both space charge contributed by photogenerated carriers and carrier recombination which disturb the internal field. We use two critical conditions to minimize these effects. (1) To limit the contribution of photocarriers to space-charge distribution, the total charge collected is less than 10−10 C per pulse, and a repetition rate 1 Hz is used to ensure that the diode remains close to its equilibrium state. (2) The measuring time window is about 1 – 6 μs following the displacement current. Typically the RC constant of diode is < 1 μs and the rise time of the forward-bias recombination current is 6.0 × μs. We apply the signal average to process the forward-bias voltage. The error is within ± 0.05 V. With this technique we can study the effect of variety of structure design or processing on the device performance.

Electric Field Profile and Charge Collection in a-Si:H Solar Cells

1991 ◽  
pp. 173-176
Author(s):  
R. Könenkamp ◽  
S. Muramatsu ◽  
H. Itoh ◽  
S. Matsubara ◽  
T. Shimada
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Charge Collection ◽  
Field Profile ◽  
Electric Field Profile

Electric-field profile and current control of a long epitaxial GaAs n layer

1972 ◽  
Vol 8 (4) ◽  
pp. 93 ◽  
Author(s):  
G.A. Swartz ◽  
A. Gonzalez ◽  
A. Dreeben
Keyword(s):  
Electric Field ◽  
Current Control ◽  
Field Profile ◽  
Epitaxial Gaas ◽  
Electric Field Profile

scholarly journals Electric potential differences across auroral generator interfaces

2013 ◽  
Vol 31 (2) ◽  
pp. 251-261 ◽  
Author(s):  
J. De Keyser ◽  
M. Echim
Keyword(s):  
Electric Field ◽  
High Altitude ◽  
Electric Fields ◽  
Electric Potential ◽  
Equilibrium Configuration ◽  
Potential Difference ◽  
Field Profile ◽  
Electric Potential Difference ◽  
Electric Field Profile

Abstract. Strong localized high-altitude auroral electric fields, such as those observed by Cluster, are often associated with magnetospheric interfaces. The type of high-altitude electric field profile (monopolar, bipolar, or more complicated) depends on the properties of the plasmas on either side of the interface, as well as on the total electric potential difference across the structure. The present paper explores the role of this cross-field electric potential difference in the situation where the interface is a tangential discontinuity. A self-consistent Vlasov description is used to determine the equilibrium configuration for different values of the transverse potential difference. A major observation is that there exist limits to the potential difference, beyond which no equilibrium configuration of the interface can be sustained. It is further demonstrated how the plasma densities and temperatures affect the type of electric field profile in the transition, with monopolar electric fields appearing primarily when the temperature contrast is large. These findings strongly support the observed association of monopolar fields with the plasma sheet boundary. The role of shear flow tangent to the interface is also examined.

Transport parameters and electric field profile in amorphous silicon solar cells

1991 ◽  
Vol 23 (2-4) ◽  
pp. 273-281
Author(s):  
R. Könenkamp ◽  
S. Muramatsu ◽  
H. Itoh ◽  
S. Matsubara ◽  
T. Shimada
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Field Profile ◽  
Transport Parameters ◽  
Electric Field Profile

Effect of the Electric Field Profile on the Accuracy of E-FISH Measurements in Ionization Waves

2021 ◽  
Author(s):  
Tat Loon Chng ◽  
David Z. Pai ◽  
Olivier Guaitella ◽  
Svetlana M Starikovskaia ◽  
Anne Bourdon
Keyword(s):  
Electric Field ◽  
Intermediate Phase ◽  
Second Harmonic ◽  
Strong Dependence ◽  
Field Profile ◽  
Test Configuration ◽  
True Value ◽  
Field Evolution ◽  
Electric Field Profile ◽  
Fish Signal

Abstract Electric field induced second harmonic (E-FISH) generation has emerged as a versatile tool for measuring absolute electric field strengths in time-varying, non-equilibrium plasmas and gas discharges. Yet recent work has demonstrated that the E-FISH signal, when produced with tightly focused laser beams, exhibits a strong dependence on both the length and shape of the applied electric field profile (along the axis of laser beam propagation). In this paper, we examine the effect of this dependence more meaningfully, by predicting what an E-FISH experiment would measure in a plasma, using 2D axisymmetric numerical fluid simulations as the true value. A pin-plane nanosecond discharge at atmospheric pressure is adopted as the test configuration, and the electric field evolution during the propagation of the ionization wave (IW) is specifically analyzed. We find that the various phases of this evolution (before and up to the front arrival, immediately behind the front and after the connection to the grounded plane) are quite accurately described by three unique electric field profile shapes, each of which produces a different response in the E-FISH signal. As a result, the accuracy of an E-FISH measurement is generally predicted to be comparable in the first and third phases of the IW evolution, and significantly poorer in the second (intermediate) phase. Fortunately, even though the absolute error in the field strength at certain time instants could be large, the overall shape of the field evolution curve is relatively well captured by E-FISH. Guided by the simulation results, we propose a procedure for estimating the error in the initial phase of the IW development, based on the presumption that the starting field profile mirrors that of its corresponding Laplacian conditions before evolving further. We expect that this approach may be readily generalized and applicable to other IW problems or phenomena, thus extending the utility of the E-FISH diagnostic.

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