Stress Characterization of Sputtered PZT Films

1997 ◽  
Vol 505 ◽  
Author(s):  
M. J. Mescher ◽  
M. L. Reed ◽  
T. E. Schlesinger
Keyword(s):  
Lead Zirconate Titanate ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Film Stress ◽  
Intrinsic Stress ◽  
Composite Target ◽  
Fluorescence Measurements ◽  
Wide Range ◽  
Pzt Films ◽  
Sputter Deposited

ABSTRACTIn this work we show that stress in sputter deposited lead zirconate titanate (PZT) films can be controlled by variation of both deposition and annealing temperatures. These films were deposited via reactive rf magnetron sputtering using a Pb1.25Zr. 52Ti. 48 03 composite target and 02 as a reactive gas in an Ar ambient. Variation of stress as a function of deposition and annealing temperature was characterized. The deposited film composition was determined from x-ray fluorescence measurements. There is a strong correlation between film stress, composition, and crystallographic orientation. Stress was determined from the deflection of released SiO 2/Pt cantilever beams. We show that films with a wide range of intrinsic stress can be deposited which still exhibit good piezoelectric properties, making the fabrication of reliable thin film piezoelectric actuators possible.

The effect of oxygen partial pressure during cooling on lead zirconate titanate thin film growth by using rf magnetron sputtering method

1998 ◽  
Vol 13 (12) ◽  
pp. 3442-3448 ◽  
Author(s):  
Dong Joo Kim ◽  
Tae Song Kim ◽  
Jeon Kook Lee ◽  
Hyung Jin Jung
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Lead Zirconate Titanate ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Grain Distribution

The lead zirconate titanate (PZT) thin film was deposited on platinized silicon wafer substrate by the rf magnetron sputtering method. In order to investigate the effect of cooling ambient, oxygen partial pressure was controlled during cooling PZT films. The PZT films cooled at lower oxygen partial pressure had perovskite phase and pyrochlore phase in both as-grown and postannealed films, but in the PZT films cooled at higher oxygen partial pressure, pyrochlore phases were not detected by XRD. As the oxygen partial pressure became lower during cooling, the capacitors had low values of remanent polarization and coercive field for as-grown films. The PZT capacitor with such a low value was recovered by postannealing in air, but its electrical properties had the same tendency before and after annealing. Microstructure was also affected by cooling ambient. Higher oxygen partial pressure on cooling reduced the number of very fine grains, and enhanced uniform grain distribution. Fatigue characteristics were also enhanced by cooling at higher oxygen partial pressure. However, the imprint was negligible irrespective of oxygen partial pressure upon cooling. The cooling procedure at higher oxygen ambients is believed to reduce the amounts of nonferroelectric second phases and oxygen vacancies. We find that oxygen partial pressure during cooling is a considerable process parameter. Therefore, care should be taken in treating the parameter after depositing films.

Lead Zirconate Titanate Films Produced by ‘Facing Targets’ RF-Sputtering

1990 ◽  
Vol 200 ◽  
Author(s):  
R. A. Roy ◽  
K. F. Etzold ◽  
J. J. Cuomo
Keyword(s):  
Lead Zirconate Titanate ◽  
Silicon Oxide ◽  
Rf Sputtering ◽  
Lead Zirconate ◽  
Process Conditions ◽  
Electrical Measurements ◽  
Process Gas ◽  
Zirconate Titanate ◽  
Wide Range ◽  
Pzt Films

ABSTRACTThe growth of ferroelectric lead zirconate titanate (PZT) films by rf-sputtering using facing targets is described. This study has focused on producing thin (<500 nm) PZT films on a wide range of substrates including magnesium oxide, spinel, alumina, silicon oxide, and the respective substrates coated with platinum. Deposition was from two opposed targets separated by 10–15 cm, with the substrate plane normal to the targets and outside the cylinder defined by the two targets. This geometry was chosen to obtain compositional uniformity and avoid ion bombardment effects. The deposition temperatures ranged from RT to 700 °C and the process gas was a mixture of argon and oxygen. Effects of deposition conditions and post-deposition annealing on film composition, microstructure, and properties were evaluated using Rutherford backscattering spectroscopy (RBS), x-ray diffraction, optical and electron microscopy, and various electrical measurements. Optimization of process conditions is discussed in terms of phase purity, preferred orientation, and minimization of electrode interaction.

The alternative route of low-temperature preparation of highly oriented lead zirconate titanate thin films by high gas-pressure processing

2008 ◽  
Vol 23 (11) ◽  
pp. 2846-2853 ◽  
Author(s):  
X.D. Zhang ◽  
X.J. Meng ◽  
J.L. Sun ◽  
T. Lin ◽  
J.H. Ma ◽  
...  
Keyword(s):  
Low Temperature ◽  
Lead Zirconate Titanate ◽  
Perovskite Structure ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
High Oxygen Pressure ◽  
Low Temperature Preparation ◽  
Pzt Films ◽  
Sputter Deposited ◽  
Temperature Preparation

The Pb(ZrxTi1–x)O3(PZT) films sputter deposited on LaNiO3(LNO)/Si(100) substrates were recrystallized to highly (l00)-oriented perovskite structure by high oxygen-pressure processing (HOPP) and high argon-pressure processing (HAPP), which were performed at a relatively low temperature 400 °C compared to the normally required temperature condition above 600 °C. Ferroelectricity of PZT films was investigated by a measurement of P-E hysteresis loop. The P-E hysteresis loops of the PZT(52/48) and PZT(30/70) films after HOPP showed better squareness and larger remnant polarization than those of as-sputtered ones prepared at a high temperature of 600 °C. Although the PZT films with HAPP also showed a high (l00)-oriented perovskite structure and obvious ferroelectricity, their P-E loops suggested relatively poor ferroelectricity compared to those of the PZT films with HOPP. This means that a further optimization for HAPP is needed to improve ferroelectricity of PZT films.

scholarly journals Исследование состава и фазового состояния тонких пленок цирконата-титаната свинца, полученных высокочастотным магнетронным осаждением, при изменении давления рабочего газа

2019 ◽  
Vol 45 (6) ◽  
pp. 3
Author(s):  
Д.М. Долгинцев ◽  
В.П. Пронин ◽  
Е.Ю. Каптелов ◽  
С.В. Сенкевич ◽  
И.П. Пронин
Keyword(s):  
High Temperature ◽  
Lead Zirconate Titanate ◽  
Pyrochlore Structure ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Lead Content ◽  
High Temperature Annealing ◽  
Two Phase ◽  
Sputtering Deposition ◽  
Pzt Films

AbstractVariation of the working gas pressure (from 8 to 2 Pa) during RF magnetron sputtering deposition of thin perovskite lead zirconate titanate (PZT) films revealed strong changes in their lead content, which decreased below the stoichiometric level and led to the formation of a two-phase (perovskite–pyrochlore) structure upon subsequent high-temperature annealing. Measurements of the composition of perovskite islands in the two-phase films showed that the lead content in these islands was equal to or greater than stoichiometric. These results lead to the conclusion that the obtained PZT films are free of lead vacancies.

scholarly journals Microstructure and Properties of PZT Films with Different PbO Content—Ionic Mechanism of Built-In Fields Formation

Materials ◽  
2019 ◽  
Vol 12 (18) ◽  
pp. 2926 ◽  
Author(s):  
Nikolay Mukhin ◽  
Dmitry Chigirev ◽  
Liubov Bakhchova ◽  
Andrey Tumarkin
Keyword(s):  
Lead Zirconate Titanate ◽  
Lead Oxide ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Experimental Studies ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Heterophase Structure ◽  
Pzt Films ◽  
A Charge

Experimental studies were conducted on the effects of lead oxide on the microstructure and the ferroelectric properties of lead zirconate-titanate (PZT) films obtained by the method of radio frequency (RF) magnetron sputtering of a ceramic PZT target and PbO2 powder with subsequent heat treatment. It is shown that the change in ferroelectric properties of polycrystalline PZT films is attributable to their heterophase structure with impurities of lead oxide. It is also shown that, even in the original stoichiometric PZT film, under certain conditions (temperature above 580 °C, duration greater than 70 min), impurities of lead oxide may be formed. The presence of a sublayer of lead oxide leads to a denser formation of crystallization centers of the perovskite phase, resulting in a reduction of the grain size as well as the emergence of a charge on the lower interface. The formation of the perovskite structure under high-temperature annealing is accompanied by the diffusion of lead into the surface of the film. Also shown is the effect of the lead ions segregation on the formation of the self-polarized state of thin PZT films.

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

Sol-Gel Derived PZT Thick Films with Nano-Sized Microstructure

2002 ◽  
Vol 748 ◽  
Author(s):  
C. L. Zhao ◽  
Z. H. Wang ◽  
W. Zhu ◽  
O. K. Tan ◽  
H. H. Hng
Keyword(s):  
Lead Zirconate Titanate ◽  
Electromechanical Coupling ◽  
Thick Films ◽  
Sol Gel ◽  
Essential Element ◽  
Processing Parameters ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Coupling Coefficients ◽  
Pzt Films

ABSTRACTLead zirconate titanate (PZT) films are promising for acoustic micro-devices applications because of their extremely high electromechanical coupling coefficients and excellent piezoelectric response. Thicker PZT films are crucial for these acoustic applications. A hybrid sol-gel technology has been developed as a new approach to realize simple and cost-effective fabrication of high quality PZT thick films. In this paper, PZT53/47 thick films with a thickness of 5–50 μm are successfully deposited on Pt-coated silicon wafer by using the hybrid sol-gel technology. The obtained PZT thick films are dense, crack-free, and have a nano-sized microstructure. The processing parameters of this technology have been evaluated. The microstructure of the film has been observed using field-emission scanning electron microscopy and the crystallization process has been monitored by the X-ray diffraction. The thick films thus made are good candidates for fabrication of piezoelectric diaphragm which will be an essential element of microspeaker and microphone arrays.

PIEZOELECTRIC PROPERTIES OF PZT FILMS PREPARED BY HYDROTHERMAL METHOD

2006 ◽  
Vol 20 (25n27) ◽  
pp. 3805-3810 ◽  
Author(s):  
NOBUYOSHI FUJIWARA ◽  
KAZUHIRO KUSUKAWA ◽  
KHAIRUNISAK ABDUL RAZAK ◽  
WEI GAO
Keyword(s):  
Hydrothermal Method ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Compressive Loading ◽  
Pure Titanium ◽  
Lead Zirconate ◽  
Loading Frequency ◽  
X Ray Diffraction ◽  
Pzt Films ◽  
Transverse Effect

Lead zirconate titanate (PZT) thin films of 5 μm thick were produced by a hydrothermal method on pure titanium substrates. ZrOCl 2-8 H 2 O , Pb ( NO 3)2 and TiO 2 were used as precursors and KOH as a promoter. The hydrothermal synthesis of PZT includes nucleation and crystal growth processes at 120°C or 140°C. The crystallization states were investigated by using scanning electron microscopy and X-Ray diffraction. Piezoelectric properties were evaluated from unimorph cantilever type actuators made of the films. The relationships between the deflection of the actuator due to piezoelectric transverse effect and applied electric field in the direction of thickness of the films showed good linearity. The output voltage from the films under cyclic compressive loading increased with increasing loading frequency, and is saturated at 10 Hz. The PZT films produced by the present methods are satisfactory as a smart material, and are better than the films produced using TiCl 4 as Ti precursor.

Microstructure of Compositionally Graded PZT films Grown by Pulsed Laser Deposition

2008 ◽  
Vol 14 (S3) ◽  
pp. 53-56
Author(s):  
S.A.S. Rodrigues ◽  
A. Khodorov ◽  
M. Pereira ◽  
M.J.M. Gomes
Keyword(s):  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Film Growth ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Composition Gradient ◽  
Complex Structures ◽  
Pzt Films

Ferroelectric films with a composition gradient have attracted much attention because of their large polarization offset present in the hysteresis loops. Lead Zirconate Titanate (PZT) films were deposited on Pt/TiO2/SiO2/Si substrates by Pulsed Laser Deposition (PLD) technique, using a Nd:YAG laser (Surelite) with a source pulse wavelength of 1064 nm and duration of 5-7 ns delivering an energy of 320 mJ per pulse and a laser fluence energy about 20 J/cm2. The film growth is performed in O2 atmosphere (0,40 mbar) while the substrate is heated at 600°C by a quartz lamp. Starting from ceramic targets based on PZT compositions and containing 5% mol. of excess of PbO to compensate the lead evaporation during heat treatment, three films with different compositions Zr/Ti 55/45, 65/35 and 92/8, and two types of complex structures were produced. These complex structures are in the case of the up-graded structure (UpG), with PZT (92/8) at the bottom, PZT (65/35) on middle and PZT (55/45) on the top, and for down-graded (DoG) one, that order is reversed.

Mist Deposition of Micron-Thick Lead Zirconate Titanate Films

2003 ◽  
Vol 784 ◽  
Author(s):  
Mark D. Losego ◽  
Susan Trolier-McKinstry
Keyword(s):  
Lead Zirconate Titanate ◽  
Chemical Deposition ◽  
Lead Zirconate ◽  
Limiting Factors ◽  
Process Time ◽  
Silicon Substrates ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Chamber Temperature ◽  
Thick Lead

ABSTRACTA majority of the work published on liquid source misted chemical deposition (LSMCD) has focused on the fabrication of thin ferroelectric films for random access memory (RAM) applications. However, the ability of LSMCD to combine the characteristically good stoichiometry control of a chemical solution deposition process with good film conformality, makes this a desirable technique for other applications, including microactuators and integrated passive components. For these applications, though, LSMCD is limited by its low throughput. This paper describes the feasibility of depositing micron-thick lead zirconate titanate (PZT) films using the LSMCD tool. PZT films of 52/48 composition were deposited on both platinized silicon and platinized alumina substrates. The chamber temperature and the delivery geometry of the LSMCD tool were identified as limiting factors in the rate at which micron-thick samples can be prepared. By switching to a focused nozzle delivery geometry and increasing the chamber temperature from room temperature to 60°C, the total process time for 1 μm thick films can be reduced from 480 min to 90 min. Polarization hysteresis measurements indicated a 75% higher remanent polarization for PZT films deposited on platinized alumina substrates (35 μC/cm2) compared to those deposed on platinized silicon substrates (20 μC/cm2). The polarization loop for the silicon substrate sample was also tilted. These observations are evidence of higher tensile stresses in the PZT films deposited on silicon substrates due to a larger mismatch in the thermal expansion coefficients of the film and the substrate.

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