Diamond Coatings on Surface-Modified Carbide Tools Using KrF Pulsed Laser

1997 ◽  
Vol 505 ◽  
Author(s):  
Dong-Gu Lee ◽  
Rajiv K. Singh
Keyword(s):  
Heat Treatment ◽  
Surface Morphology ◽  
Laser Energy ◽  
Diamond Films ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Cemented Carbide ◽  
Tungsten Carbides ◽  
Diamond Coatings

ABSTRACTThe surface of a cemented carbide was modified using a KrF pulsed laser process to achieve a microrough structure, leading to stronger adherence of diamond films to cemented carbide substrates. The surface morphology and roughness were investigated with laser conditions. After the surface modification with the laser and the etching of the modified surface, heat treatment was performed prior to deposition of diamond film in order to observe changes in surface morphology and adhesion. Diamond films were grown by chemical vapor deposition process. The results indicated that the heat treatment of the modified cemented carbide improved the adhesion of diamond films by the recrystallization of tungsten carbides into the fine and long grains. As laser energy for the modification of a cemented carbide increased, the surface roughness increased and tungsten carbide (WC) was transformed to WC1−x(X =0–0.3) and then to W2C.

ENHANCED NUCLEATION AND SMOOTHNESS OF NANOCRYSTALLINE DIAMOND FILMS VIA W-C GRADIENT INTERLAYER

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1676-1682 ◽  
Author(s):  
QIUPING WEI ◽  
ZHIMING YU ◽  
LI MA ◽  
DENGFENG YIN
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Nanocrystalline Diamond ◽  
Cemented Carbide ◽  
Nucleation Density ◽  
Wear Properties ◽  
Nanocrystalline Diamond Films ◽  
And Performance ◽  
Cvd Diamond Coating

CVD diamond coating was deposited on to 13%wt. Co -containing tungsten cemented carbide surfaces using a hot filament chemical vapor deposition (HFCVD) to improve wear properties and performance of WC -13% wt . Co . Prior to the deposition of the diamond films, a W - C gradient intermediate layer had been sputtered on WC -13% wt . Co . The surface and cross-section morphology, phase transformation, and grain size distribution of the samples were investigated by means of field emission scanning electron microscope (SEM), X-ray diffractometer (XRD), and atomic force microscope (AFM), respectively. The results show that W - C gradient intermediate layers can effectively reduce the diffusion of Co in cemented carbide substrates during diamond deposition process, resulting high nucleation density and ultra smooth nanocrystalline diamond films.

Electrical Properties of Thin Film and Bulk Diamond Treated in Hydrogen Plasma

1989 ◽  
Vol 162 ◽  
Author(s):  
Sacharia Albin ◽  
Linwood Watkins
Keyword(s):  
Natural Diamond ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Free Standing ◽  
Before And After ◽  
Type Ia ◽  
Bulk Diamond

ABSTRACTCurrent-voltage characteristics of type Ia synthetic diamond, type IIb natural diamond and free-standing diamond films were measured before and after hydrogenation. The diamond films were polycrystalline, deposited on sacrificial silicon substrates using a microwave chemical vapor deposition process. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I-V characteristics of the samples. The concentration of electrically active hydrogen was determined from the I-V data. Hydrogen passivation of deep traps in diamond is clearly demonstrated.

The Control Of Intrinsic Stresses In Cvd Diamond Films With Multistep Processing

1995 ◽  
Vol 416 ◽  
Author(s):  
S. Nijhawan ◽  
S. M. Jankovsky ◽  
B. W. Sheldon
Keyword(s):  
Thermal Stresses ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Annealing Treatment ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Internal Stresses ◽  
Tensile Stresses ◽  
Si Substrates

ABSTRACTThe role of intrinsic stresses in diamond films is examined. The films were deposited on (100) Si substrates by microwave plasma-enhanced chemical vapor deposition. The total internal stresses (thermal and intrinsic) were measured at room temperature with the bending plate method. The thermal stresses are compressive and arise due to the mismatch in thermal expansion coefficient of film and substrate. The intinsic stresses were tensile and evolved during the deposition process. These stresses increased with increasing deposition time. A 12 hour intermediate annealing treatment was found to reduce the tensile stresses considerably. The annealing treatment is most effective when the diamond crystallites are undergoing impingement and coalescence. This is consistent with the theory that the maximum tensile stresses are associated with grain boundary energetics.

scholarly journals Influence of the Heat Dissipation Mode of Long-Flute Cutting Tools on Temperature Distribution during HFCVD Diamond Films

Crystals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 394
Author(s):  
Zhang ◽  
Qian ◽  
wang ◽  
Huang ◽  
Zhang ◽  
...  
Keyword(s):  
Heat Dissipation ◽  
Focal Point ◽  
Cutting Tools ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Decisive Role ◽  
Diamond Coatings ◽  
The Difference ◽  
The Individual

The distribution of substrate temperature plays a decisive role on the uniformity of polycrystalline diamond films on cemented carbide tools with a long flute, prepared by a hot filament chemical vapor deposition (HFCVD). In this work, the heat dissipation mode at the bottom of tools is a focal point, and the finite volume method (FVM) is conducted to simulate and predict the temperature field of tools, with the various materials of the holder placed under the tools. The simulation results show that the thermal conductivity of the holder affects the temperature difference of the individual tools greatly, but only affects the temperature of different tools at the same XY plane slightly. Moreover, the ceramic holder can reduce the difference in temperature of an individual tool by 54%, compared to a copper one. Afterwards, the experiments of the deposition of diamond films is performed using the preferred ceramic holder. The diamond coatings on the different positions present a highly uniform distribution on their grain size, thickness, and quality.

Effects of CH4 Concentration on CVD Diamond Coatings Deposited on Cemented Carbide Cutting Cools

2006 ◽  
Vol 532-533 ◽  
pp. 480-483 ◽  
Author(s):  
Wen Zhuang Lu ◽  
Dun Wen Zuo ◽  
Min Wang ◽  
Feng Xu
Keyword(s):  
Residual Stress ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Great Influence ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Cemented Carbide ◽  
Diamond Coatings ◽  
Ch4 Concentration

Chemical vapor deposition (CVD) diamond coatings were deposited on cemented carbide cutting cools by an electron-assisted hot filament chemical vapor deposition (EACVD) equipment developed by the authors. The CVD diamond coatings were studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman). The experimental results show that CH4 concentration in the source gas performs great influence on the micro-structure, surface roughness, composition, residual stress and adhesion of the CVD diamond coatings. The increase of CH4 concentration results the change of diamond crystal from {111} orientation to {100} orientation, the decrease of the surface roughness and the increase of sp2 carbon in the CVD diamond coatings. A residual compressive stress exists in the CVD diamond coatings. The residual stress decreases with increasing CH4 concentration. A higher or lower CH4 concentration tends to reduce adhesion stress of the continuous CVD diamond coatings.

Electrical Properties of Pulsed Laser Deposited ZnO Thin Films

2009 ◽  
Vol 67 ◽  
pp. 121-125
Author(s):  
Chattopadhyay Sourav ◽  
Kumar Nath Tapan
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Hall Mobility ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Zno Thin Films ◽  
Zno Films ◽  
Visible Absorption ◽  
Substrate Temperatures

Epitaxial Single-crystal ZnO thin films have been grown on c-plane (0001) sapphire by Pulsed Laser Deposition process at different substrate temperatures (300 – 800 °C) with 10-1 mbar oxygen pressure. The thicknesses of the films have been varied by varying number of pulses with a repetition rate of 10 pulse/sec. It is found that the sheet resistivity of ZnO thin films grown on c-plane sapphires are in the order of 10-2 Ω-cm and it increases with increasing substrate temperatures and film thickness. The carrier concentrations and Hall mobility are found to be in the order of 1017 cm-3 and ~195 cm2/V-s, respectively. The Hall mobility slightly decreases with increase of substrate temperature and thickness of the films. It is also found that the ZnO films are structurally uniform and well oriented with perfect wurtzite structure with c/a ratio 5.1. We have also deposited non-epitaxial ZnO films on (100) p-Silicon substrates at the same conditions. From HR FE-SEM micrographs, surface morphology of ZnO films grown at lower substrate temperature are found to be uniform compared to the films grown at higher temperatures showing non-uniformity and misoriented wurtzite structures. However, the surface morphology of ZnO flims grown epitaxially on (0001) sapphire are found to be more uniform and it does not change much with growth temperature. The resistivity of the films grown on p-Silicon at higher temperatures is in the order of 103 Ω-cm whereas films grown at lower substrate temperatures show comparatively lower resistivities (~ 102 Ω-cm). From the recorded UV-Visible absorption spectrum the band gap of the film has been estimated to be 3.38 eV.

Effect of Boron Concentration on Adhesion and Cutting Performance of Diamond-Coated Cemented Carbide Tools

2008 ◽  
Vol 375-376 ◽  
pp. 138-142 ◽  
Author(s):  
Cheng Zhi Yao ◽  
Fang Hong Sun ◽  
Zhi Ming Zhang ◽  
Ming Chen
Keyword(s):  
Surface Morphology ◽  
Adhesive Strength ◽  
Boron Concentration ◽  
Diamond Films ◽  
Indentation Test ◽  
Cutting Performance ◽  
Cemented Carbide ◽  
Average Grain Size ◽  
Cemented Carbide Tools ◽  
Coated Cemented Carbide

Diamond thin films doped with various boron concentrations were grown on WC-Co cemented carbide tools by hot-filament-assisted chemical vapor deposition (HFCVD). The trimethyl borate dissolved in acetone solution was used as the boron resource (B/C=0%, 0.1%, 0.3%, 0.5%). The surface morphology of diamond films with different boron contents was investigated by Scanning electron microscopy, the adhesive strength was calculated by means of indentation test under a load of 1500N. A real cutting performance was carried out on Al metal matrix composites material (20vol%SiC, 15μm), and the insert flank wear was examined by measuring the scars that appeared on the cutting edge with tool microscope. The research results shown the surface morphology and structure of the diamond films changed owing to boron doping. As the doping levels increased, the average grain size of the films decreased from 10 to 2μm. A significant improvement in adhesion and cutting performance were observed as the boron contents increased from 0% to 0.5%. The adhesion and cutting performance were best when the boron concentration was 0.3%. Adequate boron can effectively suppress the cobalt diffusion to the substrate surface and avoid the catalytic effect of cobalt at the high temperature. It is of great significance for improvement of the adhesive strength and cutting performance of diamond-coated tools using above method.

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