Formation of Nanocluster Colloids of Tin, Gold and Copper in Magnesium Oxide by MeV Ion Implantation

1997 ◽  
Vol 504 ◽  
Author(s):  
R. L. Zimmerman ◽  
D. Ila ◽  
E. K. Williams ◽  
S. Sarkisov ◽  
D. B. Poker ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Magnesium Oxide ◽  
Room Temperature ◽  
Full Width Half Maximum ◽  
Rutherford Backscattering Spectrometry ◽  
Threshold Fluence ◽  
Full Width ◽  
Half Maximum ◽  
Absorption Bands

ABSTRACTWe have implanted ions of Sn, Au and Cu at energies between 160 keV and 2.0 MeV into single crystals of MgO (100) at room temperature. The formation of nanoclusters was confirmed using photospectrometry, in combination with Mie's theory, which was indirect but nondestructive. Using Doyle's theory, as well as Rutherford Backscattering Spectrometry (RBS), we correlated the full width half maximum of the absorption bands to the estimated size of the metallic nanoclusters between 1–10 nm. These clusters were formed both by over implantation and by a combination of threshold fluence of the implanted species and post thermal annealing. The changes in the estimated size of the nanoclusters, after annealing at temperatures ranging from 500°C to 1000°C, were observed using photospectrometry.

Change in yhe Optical Properties of Sapphire Induced by Ion Implantation

1997 ◽  
Vol 504 ◽  
Author(s):  
D. Ila ◽  
E. K. Williams ◽  
S. Sarkisov ◽  
D. B. Poker ◽  
D. K. Hensley
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Full Width Half Maximum ◽  
Rutherford Backscattering Spectrometry ◽  
Full Width ◽  
Half Maximum ◽  
Transmission Electron ◽  
Before And After ◽  
Linear Optical Properties ◽  
Average Size

ABSTRACTWe have studied the formation of nano-crystals, after implantation of 2.0 MeV gold, 1.5 MeV silver, 160 keV copper and 160 keV tin into single crystal of A12O3. We also studied the change in the linear optical properties of the implanted Al2O3 before and after subsequent annealing by measuring the increase in resonance optical absorption. Applying Doyle's theory and the results obtained from Rutherford backscattering spectrometry (RBS) as well as the full width half maximum of the absorption band from Optical Absorption Photospectrometry (OAP), we measured the average size of the metallic clusters for each sample after heat treatment. The formation and crystallinity of the nanoclusters were also confirmed using transmission electron microscopy (TEM) technique.

Infrared luminescence properties of bismuth-doped barium silicate glasses

2007 ◽  
Vol 22 (7) ◽  
pp. 1954-1958 ◽  
Author(s):  
Jinjun Ren ◽  
Jianrong Qiu ◽  
Danping Chen ◽  
Chen Wang ◽  
Xiongwei Jiang ◽  
...  
Keyword(s):  
Fluorescence Intensity ◽  
Room Temperature ◽  
Full Width Half Maximum ◽  
Wavelength Region ◽  
Silicate Glasses ◽  
Full Width ◽  
Half Maximum ◽  
Infrared Luminescence ◽  
Barium Silicate ◽  
Luminescent Centers

Infrared (IR) luminescence covering 1.1 to ∼1.6 μm wavelength region was observed from bismuth-doped barium silicate glasses, excited by a laser diode at 808 nm wavelength region, at room temperature. The peak of the IR luminescence appears at 1325 nm. A full width half-maximum (FWHM) and the lifetime of the fluorescence is more than 200 nm and 400 μs, respectively. The fluorescence intensity increases with Al2O3 content, but decreases with BaO content. We suggest that the IR luminescence should be ascribed to the low valence state of bismuth Bi2+ or Bi+, and Al3+ ions play an indirect dispersing role for the infrared luminescent centers.

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Low Dose ◽  
Correlation Method ◽  
High Dose ◽  
Tetrahedral Sites ◽  
Time Differential ◽  
Before And After ◽  
Beryllium Foil

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

Photoluminescence of Erbium-Diffused Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
H. Horiguchi ◽  
T. Kinone ◽  
R. Saito ◽  
T. Kimura ◽  
T. Ikoma
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Luminescence Spectra ◽  
Main Peak ◽  
Silicon Substrates ◽  
Annealing Atmosphere ◽  
Full Width ◽  
Half Maximum ◽  
Strong Luminescence ◽  
Fine Structures

AbstractErbium films are evaporated on crystalline silicon substrates and are thermally diffused into silicon in an Ar+02 or H2 flow. Very sharp Er3+-related luminescence peaks are observed around 1.54 μ m.The main peak as well as the fine structures of the luminescence spectra depend on the annealing atmosphere, suggesting different luminescence centers. The full width at half maximum (FWHM) of the main peaks is ≤ 0.5nm at 20K. Thermal diffusion with Al films on top of the Er films is found to increase the intensity of the Er3+-related peaks greatly. The temperature dependence between 20 K and room temperature is relatively small, and a strong luminescence is obtained at room temperature.

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Defect Concentration ◽  
Double Crystal ◽  
X Ray ◽  
Positive Strain ◽  
Independent Coefficient ◽  
The Relationship ◽  
Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

scholarly journals Observation of strong excitonic magneto-chiral anisotropy in twisted bilayer van der Waals crystals

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shoufeng Lan ◽  
Xiaoze Liu ◽  
Siqi Wang ◽  
Hanyu Zhu ◽  
Yawen Liu ◽  
...  
Keyword(s):  
Time Reversal ◽  
Room Temperature ◽  
Photochemical Reactions ◽  
Full Width ◽  
Half Maximum ◽  
A Value ◽  
Device Applications ◽  
Spectral Splitting ◽  
Iron Garnet ◽  
Spontaneous Magnetic Moment

AbstractThe interplay between chirality and magnetism generates a distinct physical process, the magneto-chiral effect, which enables one to develop functionalities that cannot be achieved solely by any of the two. Such a process is universal with the breaking of parity-inversion and time-reversal symmetry simultaneously. However, the magneto-chiral effect observed so far is weak when the matter responds to photons, electrons, or phonons. Here we report the first observation of strong magneto-chiral response to excitons in a twisted bilayer tungsten disulfide with the amplitude of excitonic magneto-chiral (ExMCh) anisotropy reaches a value of ~4%. We further found the ExMCh anisotropy features with a spectral splitting of ~7 nm, precisely the full-width at half maximum of the excitonic chirality spectrum. Without an externally applied strong magnetic field, the observed ExMCh effect with a spontaneous magnetic moment from the ferromagnetic substrate of thulium iron garnet at room temperature is favorable for device applications. The unique ExMCh processes provide a new pathway to actively control magneto-chiral applications in photochemical reactions, asymmetric synthesis, and drug delivery.

The Effect of Modified Crucible Design and Seed Attachment on SiC Crystal Grown by PVT

2013 ◽  
Vol 740-742 ◽  
pp. 77-80
Author(s):  
Jung Young Jung ◽  
Sang Il Lee ◽  
Mi Seon Park ◽  
Doe Hyung Lee ◽  
Hee Tae Lee ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Single Crystals ◽  
Crystal Quality ◽  
Full Width ◽  
Half Maximum ◽  
Radial Temperature Gradient ◽  
Radial Temperature ◽  
Better Than

The present research was focused to investigate the effect of internal crucible design that influenced the 4H-SiC crystal growth onto a 6H-SiC seed by PVT method. The crucible design was modified to produce a uniform radial temperature gradient in the growth cell. The seed attachment was also modified with a use of polycrystalline SiC plate. The crystal quality of 4H-SiC single crystals grown in modified crucible and grown with modified seed attachment was revealed to be better than that of crystal grown in conventional crucible. The full width at half maximum (FWHM) values of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 285 arcsec, 134 arcsec and 128 arcsec, respectively. The micropipe density (MPD) of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 101ea/cm^2, 81ea/cm^2 and 42ea/cm^2, respectively.

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