The Optical Properties of ION Implanted Silica

1997 ◽  
Vol 504 ◽  
Author(s):  
C. C. Smith ◽  
D. Ila ◽  
E. K. Williams ◽  
D. B. Poker ◽  
D. K. Hensley
Keyword(s):  
Optical Properties ◽  
Absorption Band ◽  
Optical Absorption ◽  
Electron Microscopic ◽  
Absorption Bands ◽  
Optical Absorption Band ◽  
Transmission Electron ◽  
Transmission Electron Microscopic ◽  
Before And After ◽  
Microscopic Techniques

ABSTRACTWe present the results of our investigation of the change in the optical properties of silica, "suprasil", after keV through MeV implantation of copper, tin, silver and gold and after annealing. Suprasil, name brand of silica glass produced by Hereaus Amersil, which is chemically highly pure with well known optical properties. Both linear and nonlinear optical properties of the implanted silica were investigated before and after thermal annealing. All implants showed strong optical absorption bands in agreement with Mie theory. For implants with a measurable optical absorption band we used Doyle's theory and the full width half maximum of the absorption band to calculate the predicted size of the formed nanoclusters at various heat treatment temperatures. These results are compared with those obtained from direct observation using transmission electron microscopic techniques.

Properties of Nano-layers of Nanoclusters of Ag in SiO2 Host produced by MeV Si ion bombardment

2007 ◽  
Vol 1020 ◽  
Author(s):  
C.C. Smith ◽  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
R. A. Minamisawa ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Absorption Band ◽  
Optical Absorption ◽  
Buffer Layer ◽  
Periodic Structure ◽  
Rutherford Backscattering Spectrometry ◽  
Bulk Material ◽  
Ion Bombardment ◽  
Optical Absorption Band ◽  
Before And After

AbstractWe prepared 50 periodic nano-layers of SiO2/AgxSiO2(1-x). The deposited multi-layer films have a periodic structure consisting of alternating layers where each layer is between 1-10 nm thick. The purpose of this research is to generate nanolayers of nanocrystals of Ag with SiO2 as host and as buffer layer using a combination of co-deposition and MeV ion bombardment taking advantage of the electronics energy deposited in the MeV ion track due to ionization in order to nucleate nanoclusters. Our previous work showed that these nanoclusters have crystallinity similar to the bulk material. Nanocrystals of Ag in silica produce an optical absorption band at about 420 nm. Due to the interaction of nanocrystals between sequential nanolayers there is widening of the absorption band. The electrical and thermal properties of the layered structures were studied before and after 5 MeV Si ions bombardment at various fluences to form nanocrystals in layers of SiO2 containing few percent of Ag. Rutherford Backscattering Spectrometry (RBS) was used to monitor the stoichiometry before and after MeV bombardments.

Change in yhe Optical Properties of Sapphire Induced by Ion Implantation

1997 ◽  
Vol 504 ◽  
Author(s):  
D. Ila ◽  
E. K. Williams ◽  
S. Sarkisov ◽  
D. B. Poker ◽  
D. K. Hensley
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Full Width Half Maximum ◽  
Rutherford Backscattering Spectrometry ◽  
Full Width ◽  
Half Maximum ◽  
Transmission Electron ◽  
Before And After ◽  
Linear Optical Properties ◽  
Average Size

ABSTRACTWe have studied the formation of nano-crystals, after implantation of 2.0 MeV gold, 1.5 MeV silver, 160 keV copper and 160 keV tin into single crystal of A12O3. We also studied the change in the linear optical properties of the implanted Al2O3 before and after subsequent annealing by measuring the increase in resonance optical absorption. Applying Doyle's theory and the results obtained from Rutherford backscattering spectrometry (RBS) as well as the full width half maximum of the absorption band from Optical Absorption Photospectrometry (OAP), we measured the average size of the metallic clusters for each sample after heat treatment. The formation and crystallinity of the nanoclusters were also confirmed using transmission electron microscopy (TEM) technique.

SYNTHESIS AND CHARACTERIZATON OF HIGH-QUALITY GaN NANORODS WITH TRIANGULAR CROSS SECTION

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2859-2864 ◽  
Author(s):  
X. X. WU ◽  
J. J. FU ◽  
Y. YANG ◽  
Q. WU ◽  
Z. HU ◽  
...  
Keyword(s):  
Optical Properties ◽  
Cross Section ◽  
Optoelectronic Devices ◽  
Hexagonal Structure ◽  
Electron Microscopic ◽  
High Quality ◽  
Triangular Cross Section ◽  
Transmission Electron ◽  
Transmission Electron Microscopic ◽  
Potential Applications

High-quality GaN nanorods with triangular cross section were synthesized via a simple chloride-assisted vapor phase epitaxy method. High-resolution transmission electron microscopic observations show that the synthesized GaN nanorods are single crystal with wurtzite hexagonal structure. Raman and photoluminescence measurements were also carried out to study the optical properties of the as-prepared GaN nanorods, which suggests the potential applications in optoelectronic devices.

OPTICAL PROPERTIES OF CARBON CLUSTERS EMBEDDED IN SiO2 FILMS

1996 ◽  
Vol 03 (01) ◽  
pp. 1095-1100 ◽  
Author(s):  
S. HAYASHI ◽  
M. KATAOKA ◽  
H. KOSHIDA ◽  
K. YAMAMOTO
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Interstellar Extinction ◽  
Carbon Clusters ◽  
Electron Microscopic ◽  
Carbon Doped ◽  
Transmission Electron ◽  
Transmission Electron Microscopic ◽  
Deposited Films

Raman spectra were measured for carbon-doped SiO 2 thin films prepared by an rf cosputtering method. The changes in the spectra were systematically studied as a function of the annealing temperature. From a detailed analysis of the spectra, the following conclusions were drawn. In the as-deposited films, very small carbon clusters are embedded in the SiO 2 matrices. When the films are annealed at 600°C, graphite-like sp 2 bonds begin to develop in the clusters. Upon annealing with higher temperatures, the size of sp 2 bond clusters increases. However, the growth of graphite microcrystals can be ruled out, since high-resolution transmission electron microscopic images of the samples annealed at 1000°C do not show lattice fringes due to graphite microcrystals. The samples annealed at 1000°C were found to exhibit an extinction hump around 220 nm, very similar to that seen in the interstellar extinction spectra.

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