scholarly journals Swelling of SiO2 Quartz Induced by Energetic Heavy Ions

1997 ◽  
Vol 504 ◽  
Author(s):  
C. Trautmann ◽  
J. M. Costantini ◽  
A. Meftah ◽  
K. Schwartz ◽  
J. P. Stoquert ◽  
...  
Keyword(s):  
Energy Loss ◽  
Heavy Ions ◽  
Sample Surface ◽  
Critical Energy ◽  
Electronic Energy ◽  
Step Height ◽  
Border Line ◽  
Projected Range ◽  
Out Of Plane ◽  
Good Agreement

ABSTRACTA pronounced swelling effect occurs when irradiating SiO2 quartz with heavy ions (F, S, Cu, Kr, Xe, Ta, and Pb) in the electronic energy loss regime. Using a profilometer, the out-of-plane swelling was measured by scanning over the border line between an irradiated and a virgin area of the sample surface. The step height varied between 20 and 300 nm depending on the fluence, the electronic energy loss and the total range of the ions. From complementary Rutherford backscattering experiments under channelling condition (RBS-C), the damage fraction and corresponding track radii were extracted. Normalising the step height per incoming ion and by the projected range, a critical energy loss of 1.8 ± 0.5 keV/nm was found which is in good agreement with the threshold observed by RBS-C. Swelling can be explained by the amorphisation induced along the ion trajectories. The experimental results in quartz are compared to swelling data obtained under similar irradiation conditions in LiNbO3

Energy losses of ions implanted in matter

1996 ◽  
Vol 11 (11) ◽  
pp. 2876-2883 ◽  
Author(s):  
J. H. Liang ◽  
K. Y. Liao
Keyword(s):  
Energy Loss ◽  
Nuclear Energy ◽  
Critical Energy ◽  
Carbon Films ◽  
Electronic Energy ◽  
Energy Losses ◽  
Nuclear Energy Loss ◽  
Light Ions ◽  
First Moment ◽  
First Four Moments

A set of simple and accurate formulae for the first four moments of nuclear and electronic energy losses is proposed. A new variable is introduced to include the finite maximum-impact-parameter effect in the nuclear stopping process, which is assumed to be infinite in most studies. A critical energy at which the electronic energy loss is equal to the nuclear energy loss is also defined. It determines whether the nuclear or the electronic stopping process is the dominant mechanism in terms of incident-ion energy. The critical energy increases for heavy ions implanted in heavy target materials during the first moment of energy loss. The second moment of electronic energy loss is important only for light ions implanted at high ion energies. The third and fourth moments of nuclear energy loss are much larger than those of the electronic energy loss for all ion-target combinations. Theoretical predications of the projected ranges and range stragglings for gold ions implanted in carbon films are close to the experimental data when these proposed four moments of nuclear and electronic energy losses are considered.

Electronic energy loss-induced effects in Fe85B15amorphous: Alloys irradiated by high energy heavy ions

1989 ◽  
Vol 110 (1-2) ◽  
pp. 109-112 ◽  
Author(s):  
A. Audouard ◽  
E. Balanzat ◽  
J. C. Jousset ◽  
G. Fuchs ◽  
D. Lesueur ◽  
...  
Keyword(s):  
Energy Loss ◽  
Heavy Ions ◽  
High Energy ◽  
Electronic Energy

Effect of high electronic energy loss of 100MeV gold heavy ions in copper chalcogenides (CuX, X=S, Se) at nanoscale: Opto-electronic properties study

2009 ◽  
Vol 355 (31-33) ◽  
pp. 1653-1658 ◽  
Author(s):  
Ramphal Sharma ◽  
Abhay Abhimanyu Sagade ◽  
Sunil Rameshgir Gosavi ◽  
Yuvraj Ganesh Gudage ◽  
Arindam Ghosh ◽  
...  
Keyword(s):  
Energy Loss ◽  
Electronic Properties ◽  
Heavy Ions ◽  
Electronic Energy ◽  
Copper Chalcogenides

Growth phenomenon in amorphous solids irradiated with GeV heavy ions: Electronic-energy-loss dependence of the initial growth rate

1996 ◽  
Vol 54 (22) ◽  
pp. 15690-15694 ◽  
Author(s):  
A. Audouard ◽  
J. Dural ◽  
M. Toulemonde ◽  
A. Lovas ◽  
G. Szenes ◽  
...  
Keyword(s):  
Growth Rate ◽  
Energy Loss ◽  
Heavy Ions ◽  
Amorphous Solids ◽  
Electronic Energy ◽  
Initial Growth ◽  
Initial Growth Rate ◽  
Growth Phenomenon

Energy-Dependent Deformation of Colloidal Silica Nanoparticles under Room Temperature Irradiation with MeV Si Ions

2009 ◽  
Vol 5 ◽  
pp. 61-67 ◽  
Author(s):  
Juan Carlos Cheang-Wong ◽  
Ulises Morales ◽  
Eder Reséndiz ◽  
Alejandra López-Suárez
Keyword(s):  
Energy Loss ◽  
Room Temperature ◽  
Ion Beam ◽  
Sample Surface ◽  
Silica Particles ◽  
Electronic Energy ◽  
Particle Deformation ◽  
Synthesis Conditions ◽  
Spherical Silica Particles ◽  
Complete Deformation

Spherical submicrometer-sized silica particles were prepared from a reaction mixture containing tetraethoxysilane, ammonia and ethanol, and deposited onto silicon wafers. The properties of these SiO2 particles depend on their size, size distribution and shape. Even if some of these characteristics can be perfectly controlled by appropriate synthesis conditions, several alternative approaches must be explored in order to modify the shape of silica particles. The samples were then irradiated at room temperature with Si ions at different energies (4, 6 and 8 MeV) and fluences up to 5×1015 Si/cm2, at an angle of 45° with respect to the sample surface. After the Si irradiation the spherical silica particles turned into ellipsoidal particles, as a result of the increase of the particle dimension perpendicular to the ion beam and a decrease in the parallel direction. This effect increases with the ion fluence and depends on the electronic energy loss of the impinging ions. We observed that the particle deformation decreases with the beam energy, mainly because our samples were irradiated at room temperature. Thermal effects must be studied in detail in order to elucidate the complete deformation mechanism, as the existence of additional mechanisms related to the electronic energy loss effects can not be excluded.

Effects of electronic energy loss in crystalline and amorphous Ni3B irradiated with high-energy heavy ions

1991 ◽  
Vol 63 (3) ◽  
pp. 727-738 ◽  
Author(s):  
A. Audouard ◽  
E. Balanzat ◽  
J. C. Jousset ◽  
A. Chamberod ◽  
G. Fuchs ◽  
...  
Keyword(s):  
Energy Loss ◽  
Heavy Ions ◽  
High Energy ◽  
Electronic Energy
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