Transport Across Silicon Grain Boundaries

1981 ◽  
Vol 5 ◽  
Author(s):  
J. Werner ◽  
W. Jantsch ◽  
K.H. Froehner ◽  
H.J. Queisser
Keyword(s):  
Simple Model ◽  
Grain Boundary ◽  
Density Of States ◽  
Thermionic Emission ◽  
Current Transport ◽  
Boundary Density ◽  
Gap States ◽  
P Type ◽  
First Time

ABSTRACTBy comparison of the capacitance and the conductivity of p–type Si bicrystals, we show quantitatively that current transport occurs through thermionic emission of holes across the potential barrier, which is caused by charged donors in the grain boundary. Starting from this finding, we propose a simple model which allows for the first time a spectroscopic determination of the grain boundary density of states from photocapacitance data. Results indicate the presence of band tails and additional mid-gap states.

Current Transport in Low-Resistance Metal-InP Contacts

1993 ◽  
Vol 300 ◽  
Author(s):  
Thomas Clausen ◽  
Otto Leistiko
Keyword(s):  
Schottky Barrier ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Current Flow ◽  
Thermionic Emission ◽  
Transport Processes ◽  
Potential Difference ◽  
Current Transport ◽  
Diffusion Limited ◽  
P Type

ABSTRACTThe limiting transport processes for current flow across metal-semiconductor (MS) ohmic contacts to n- and p-type InP have been investigated for Au-based metallizations containing the doping elements Germanium and Zinc. It has been found that the Schottky barrier is lowered and in some cases vanishes during annealing. The current flow for an optimal ohmic contact is diffusion limited by a Fermi potential difference between the alloyed metallization and the bulk InP. For non-optimal ohmic contacts the current flow is also limited by thermionic emission across a low effective Schottky barrier.

Electron Scattering with an Atomic Sized Probe

2000 ◽  
Vol 6 (S2) ◽  
pp. 102-103
Author(s):  
J. Silcox
Keyword(s):  
Grain Boundary ◽  
Electron Scattering ◽  
Material Properties ◽  
Boundary Energy ◽  
Hole Density ◽  
Grain Boundary Energy ◽  
Properties Of Materials ◽  
Gap States ◽  
Atomic And Electronic Structure

It is the presence of local variations in atomic and electronic structure that often gives rise to intriguing properties of materials. Control of material properties then rests on detection of the local variations in the materials, determination of the origin of those variations and then understanding how such variations can be controlled to achieve a desired functionality. Recent examples using STEM with an atomic sized probe (∼2.2 Å) include studies of the bonding at grain boundaries in nickel rich Ni3Al doped with boron. EELS measurements revealed changes in the d-hole density-of-states that were used to estimate changes in the electronic contribution to the grain boundary energy. These changes in grain boundary strength correlated with a change in fracture from an intra- to an inter-granular mode. In another example, the observation of metal induced gap states at Cu/MgO interfaces provided evidence that the dipole moment across that interface was relatively low.

Current Transport Mechanism of n-Type Nanocrystalline FeSi2/Intrinsic Si/p-Type Si Heterojunctions Fabricated by Facing-Targets Direct-Current Sputtering

2013 ◽  
Vol 802 ◽  
pp. 199-203 ◽  
Author(s):  
Nathaporn Promros ◽  
Suguru Funasaki ◽  
Ryūhei Iwasaki ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Ideality Factor ◽  
Low Temperatures ◽  
Transport Mechanism ◽  
Carrier Transport ◽  
Thermionic Emission ◽  
Current Transport ◽  
Current Transport Mechanism ◽  
Current Voltage ◽  
P Type ◽  
Direct Current Sputtering

n-Type nanocrystalline FeSi2/intrinsic Si/p-type Si heterojunctions were successfully fabricated by FTDCS and their forward current-voltage characteristics at low temperatures were analyzed on the basis of thermionic emission theory. The analysis of J-V characteristics exhibits an increase in the ideality factor and a decrease in the barrier height at low temperatures. The values of ideality factor were estimated to be 2.26 at 300 K and 9.29 at 77 K. The temperature dependent ideality factortogether with the constant value of parameter A indicated that a trap assisted multi-step tunneling process is the dominant carrier transport mechanism in this heterojunction. At high voltages, the current transport mechanism is dominated by SCLC process.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

Short Channel Poly-Si TFT with Single Grain Boundary by Excimer Laser Annealing on Al-masked a-Si Layer

2002 ◽  
Vol 715 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Jae-Hoon Lee ◽  
Min-Koo Han
Keyword(s):  
Grain Boundary ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Silicon Layer ◽  
Silicon Thin Film ◽  
Short Channel ◽  
Excimer Laser Annealing ◽  
Boundary Density ◽  
Single Grain

AbstractA short channel polycrystalline silicon thin film transistor (poly-Si TFT), which has single grain boundary in the center of channel, is reported. The reported poly-Si TFT employs lateral grain growth method through aluminum patterns, which acts as a selective beam mask and a lateral heat sink during the laser irradiation, on an amorphous silicon layer. The electrical characteristics of the proposed poly-Si TFT have been considerably improved due to grain boundary density lowered. The reported short channel poly-Si TFT with single grain boundary exhibits high mobility as 222 cm2/Vsec and large on/off current ratio exceeding 1 × 108.

Disability as a social phenomenon

2020 ◽  
pp. 22-38
Author(s):  
Natalia Guseva ◽  
Vitaliy Berdutin
Keyword(s):  
Social Protection ◽  
Russian Society ◽  
Stage Model ◽  
High Quality ◽  
Rehabilitation Programs ◽  
Current State ◽  
The Social ◽  
Consistent Solution ◽  
First Time

At present, the problem of establishing disability is a point at issue in Russia. Despite the fact that medical criteria for disability are being developed very actively, high-quality methods for assessing social hallmarks are still lacking. Since disability is a phenomenon inherent in any society, each state forms a social and economic policy for people with disabilities in accordance with its level of development, priorities and opportunities. We have proposed a three-stage model, which includes a system for the consistent solution of the main tasks aimed at studying the causes and consequences of the problems encountered today in the social protection of citizens with health problems. The article shows why the existing approaches to the determination of disability and rehabilitation programs do not correspond to the current state of Russian society and why a decrease in the rate of persons recognized as disabled for the first time does not indicate an improvement in the health of the population. The authors proposed a number of measures with a view to correcting the situation according to the results of the study.

Phytochemical Constituents of Annona reticulata and their Cytotoxic Activity

2020 ◽  
Vol 17 (3) ◽  
pp. 206-210
Author(s):  
Ty Viet Pham ◽  
Thang Quoc Le ◽  
Anh Tuan Le ◽  
Hung Quoc Vo ◽  
Duc Viet Ho
Keyword(s):  
Cytotoxic Activity ◽  
Cell Lines ◽  
Structural Determination ◽  
Phytochemical Investigation ◽  
Ic50 Values ◽  
Phytochemical Constituents ◽  
First Time ◽  
Annona Reticulata

A phytochemical investigation of the leaves of Annona reticulata led to the isolation and structural determination of β-sitosterol (1), ent-pimara-8(14),15-dien-19-oic acid (2), ent-pimara- 8(14),15-dien-19-ol (3), quercetin (4), quercetin 3-O-α-L-arabinopyranoside (5), and a mixture of quercetin 3-O-β-D-galactopyranoside (6a) and quercetin 3-O-β-D-glucopyranoside (6b). Of these, compounds 2 and 3 were isolated from the genus Annona for the first time. Compound 3 showed strong cytotoxicity against SK-LU-1 and SW626 cell lines with IC50 values of 17.64 ± 1.07 and 19.79 ± 1.41 μg mL-1, respectively.

Development of an HPLC-UV Method for Quantification of Stattic

2019 ◽  
Vol 15 (6) ◽  
pp. 568-573
Author(s):  
Soheil Sedaghat ◽  
Ommoleila Molavi ◽  
Akram Faridi ◽  
Ali Shayanfar ◽  
Mohammad Reza Rashidi
Keyword(s):  
High Performance ◽  
Accurate Method ◽  
Plasma Samples ◽  
Promising Target ◽  
Relative Standard ◽  
Dimerization Inhibitor ◽  
Oncogenic Protein ◽  
First Time ◽  
Transcription 3

Background: Signal transducer and activator of transcription 3 (STAT3), an oncogenic protein found constitutively active in many types of human malignancies, is considered to be a promising target for cancer therapy. Objective: In this study for the first time, a simple and accurate method has been developed for the determination of a STAT3 dimerization inhibitor called stattic in aqueous and plasma samples. Methods: A reverse-phase high-performance liquid chromatography (RP-HPLC) composed of C18 column as stationary phase, and the mixture of acetonitrile (60%) and water (40%) as mobile phase with a UV detection at 215 nm were applied for quantification of stattic. The developed method was validated by Food and Drug Administration (FDA) guideline. Results: The method provided a linear range between 1-40 and 2.5-40 µg mL-1 for aqueous and plasma samples, respectively, with a correlation coefficient of 0.999. The accuracy (as recovery) of the developed method was found to be between 95-105% for aqueous medium and 85-115% for plasma samples. The precision (as relative standard deviation) for aqueous and plasma samples was less than 6% and 15%, respectively. The sensitivity of the developed method based on FDA guideline was 1 µg mL-1 for aqueous and 2.5 µg mL-1 for plasma samples. Conclusion: These results show that the established method is a fast and accurate quantification for stattic in aqueous and plasma samples.

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