Electrical Properties of ZnO-Bi2O3 Metal Oxide Heterojunction — A Clue of a Role of Intergranular Layers in ZnO Varistors

1981 ◽  
Vol 5 ◽  
Author(s):  
Kazuo Eda
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Metal Oxide ◽  
Oxide Thin Film ◽  
Thin Film Thickness ◽  
Metal Oxide Thin Film ◽  
Zno Varistors ◽  
Current Characteristics ◽  
Zno Ceramics

ABSTRACTZinc Oxide (ZnO) Ceramics-Bismuth Oxide (Bi2O3) Metal Oxide thin film heterojunction made by sputtering technique showed a highly non-Ohmic property. The voltage-current characteristics and the dielectric properties showed dependence on Bi2O3 metal oxide thin film thickness.In this paper after reviewing and discussing the electrical properties of ZnO varistors, the role of intergranular layers in the ZnO varistor is discussed based on experimental results with the heterojunction.

Laser annealing of metal oxide thin film transistor

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 nm to 2500 nm near-infrared illumination

2022 ◽  
Author(s):  
Ali Sehpar Shikoh ◽  
Gi Sang Choi ◽  
Sungmin Hong ◽  
Kwang Seob Jeong ◽  
Jaekyun Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Near Infrared ◽  
Effective Diffusion ◽  
Band Alignment ◽  
Oxide Thin Film ◽  
Photogenerated Carrier ◽  
Channel Layer ◽  
Metal Oxide Thin Film

Abstract We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based phototransistor exhibited the best performance of near infrared (NIR) detection in terms of response time, sensitivity and detectivity as high as 0.38 s, 3.91 and 4.55 × 107 Jones at room temperature, respectively. This is indebted mainly from the effective diffusion of photogenerated carrier from the PbSe surface to ITZO channel layer as well as from the conduction band alignment between them. Therefore, we believe that our hybrid PbSe/ITZO material platform can be widely used to be in favour of incorporation of solution-processed colloidal light absorbing material into the high-performance metal oxide thin film transistor configuration.

Sign in / Sign up

Export Citation Format

Share Document