An Enhanced Photoresponse at Dislocation Subgrain Boundaries Revealed by X-Ray Topography of Polysilicon Solar Cells

MRS Proceedings ◽

10.1557/proc-5-179 ◽

1981 ◽

Vol 5 ◽

Author(s):

S.M. Johnson ◽

R.W. Armstrong ◽

R.G. Rosemeier ◽

G.M. Storti ◽

H.C. Lin ◽

...

Keyword(s):

Solar Cells ◽

Dislocation Density ◽

Grain Boundaries ◽

Minority Carrier ◽

Diffusion Length ◽

Junction Depth ◽

Twin Boundaries ◽

Pure Material ◽

Minority Carrier Diffusion Length ◽

X Ray

ABSTRACTAn enhanced photoresponse at dislocation subgrain boundaries (in comparison with grain boundaries and dislocation-associated twin boundaries) is attributed to an increased junction depth at their positions relative to the value of the minority carrier diffusion length, Ln. For reasonably pure material, Ln is determined by the dislocation density. The dislocation microstructure of polysilicon solar cells is advantageously studied by means of the several x-ray topography techniques.

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Effect of grain boundaries on the minority carrier diffusion length in InP solar cells

Solar Cells ◽

10.1016/0379-6787(82)90051-5 ◽

1982 ◽

Vol 7 (3) ◽

pp. 281-290 ◽

Cited By ~ 5

Author(s):

L. Tarricone ◽

E. Don ◽

N.M. Pearsall ◽

T.J. Coutts

Keyword(s):

Solar Cells ◽

Grain Boundaries ◽

Minority Carrier ◽

Diffusion Length ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion

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Bias Light Wavelength Dependence of Minority Carrier Diffusion Length of EFG Silicon Ribbon Solar Cells

Japanese Journal of Applied Physics ◽

10.1143/jjap.21.l558 ◽

1982 ◽

Vol 21 (Part 2, No. 9) ◽

pp. L558-L560 ◽

Cited By ~ 2

Author(s):

Ryuichi Shimokawa ◽

Yutaka Hayashi

Keyword(s):

Solar Cells ◽

Minority Carrier ◽

Diffusion Length ◽

Wavelength Dependence ◽

Light Wavelength ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Silicon Ribbon

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One shot mapping of minority carrier diffusion length in polycrystalline silicon solar cells using electroluminescence

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference 2005 PVSC-05 ◽

10.1109/pvsc.2005.1488390 ◽

2005 ◽

Cited By ~ 3

Author(s):

T. Fuyuki ◽

H. Kondo ◽

Y. Kaji ◽

T. Yamazaki ◽

Y. Takahashi ◽

...

Keyword(s):

Solar Cells ◽

Polycrystalline Silicon ◽

Minority Carrier ◽

Diffusion Length ◽

Silicon Solar Cells ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion

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Effect of grain boundaries in silicon on minority‐carrier diffusion length and solar‐cell efficiency

Applied Physics Letters ◽

10.1063/1.90250 ◽

1978 ◽

Vol 33 (12) ◽

pp. 1009-1011 ◽

Cited By ~ 36

Author(s):

T. Daud ◽

K. M. Koliwad ◽

F. G. Allen

Keyword(s):

Solar Cell ◽

Grain Boundaries ◽

Minority Carrier ◽

Diffusion Length ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Solar Cell Efficiency ◽

Cell Efficiency

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Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence

Applied Physics Letters ◽

10.1063/1.1978979 ◽

2005 ◽

Vol 86 (26) ◽

pp. 262108 ◽

Cited By ~ 322

Author(s):

Takashi Fuyuki ◽

Hayato Kondo ◽

Tsutomu Yamazaki ◽

Yu Takahashi ◽

Yukiharu Uraoka

Keyword(s):

Solar Cells ◽

Polycrystalline Silicon ◽

Minority Carrier ◽

Diffusion Length ◽

Silicon Solar Cells ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion

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Measurement of minority carrier diffusion length from spectral response of thin film polycrystalline silicon solar cells

Solar Cells ◽

10.1016/0379-6787(88)90052-x ◽

1988 ◽

Vol 25 (1) ◽

pp. 1-13 ◽

Cited By ~ 4

Author(s):

R. Kishore ◽

M. Barbe ◽

J.L. Pastol ◽

M. Caymax ◽

J.E. Bouree ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Polycrystalline Silicon ◽

Minority Carrier ◽

Diffusion Length ◽

Spectral Response ◽

Silicon Solar Cells ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion

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Comment on ‘‘Evaluation of the minority carrier diffusion length and edge surface‐recombination velocity in GaAs p/n solar cells’’ [J. Appl. Phys. 72, 2919 (1992)]

Journal of Applied Physics ◽

10.1063/1.354502 ◽

1993 ◽

Vol 74 (5) ◽

pp. 3620-3621

Author(s):

Keung L. Luke

Keyword(s):

Solar Cells ◽

Minority Carrier ◽

Diffusion Length ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Edge Surface ◽

Recombination Velocity

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Study of minority carrier diffusion length in multicrystalline silicon solar cells using photoassisted Kelvin probe force microscopy

Applied Physics Letters ◽

10.1063/1.3264081 ◽

2009 ◽

Vol 95 (19) ◽

pp. 191908 ◽

Cited By ~ 16

Author(s):

Masaki Takihara ◽

Takuji Takahashi ◽

Toru Ujihara

Keyword(s):

Solar Cells ◽

Minority Carrier ◽

Diffusion Length ◽

Kelvin Probe Force Microscopy ◽

Multicrystalline Silicon ◽

Silicon Solar Cells ◽

Kelvin Probe ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Force Microscopy

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Measurements of minority-carrier diffusion length in heterojunction solar cells

Solar Energy Materials ◽

10.1016/0165-1633(79)90029-7 ◽

1979 ◽

Vol 2 (1) ◽

pp. 45-52 ◽

Cited By ~ 7

Author(s):

L. Tarricone ◽

E. Gombia

Keyword(s):

Solar Cells ◽

Minority Carrier ◽

Diffusion Length ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Heterojunction Solar Cells

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Gettering of Dissolved and Segregated Impurities in Multicrystalline Silicon Wafers

MRS Proceedings ◽

10.1557/proc-262-975 ◽

1992 ◽

Vol 262 ◽

Cited By ~ 1

Author(s):

M. Stemmer ◽

I. Perichaud ◽

S. MartiNuzzi

Keyword(s):

Grain Boundaries ◽

Light Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Extended Defects ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Cast Ingot ◽

Crystallographic Defects ◽

Homogeneous Regions

ABSTRACTPhosphorus gettering by diffusion from a POCl3 source was applied to matched wafers cut out of the same region of a cast ingot. Light Beam Induced Current mappings with wavelengths in the range between 840 and 980 nm lead to follow the variation of minority carrier diffusion length after gettering at 900°C for 120 and 240 mn, especially near extended crystallographic defects like dislocations and grain boundaries.The mappings show that after the gettering treatments, the local values of L increase due to the reduction of the recombination strength of extended defects and to the improvement of the homogeneous regions of the grains.As SIMS analyses indicate that Fe, Cu and Ni atoms are gettered, it is reasonable to assume that these impurities were initially dissolved in the grains and also segregated at the extended defects.

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