High Performance Vanadium Oxide Thin Film Electrodes for Rechargeable Lithium Batteries

1997 ◽  
Vol 496 ◽  
Author(s):  
Ji-Guang Zhang ◽  
Ping Liu ◽  
C. Edwin Tracy ◽  
David K. Benson ◽  
John A. Turner

ABSTRACTPlasma Enhanced Chemical Vapor Deposition (PECVD) was used to prepare vanadium oxide thin films as cathodes for rechargeable lithium batteries. The reactants consisted of a high vapor pressure liquid source of vanadium (VOCl3) and hydrogen and oxygen gas. Deposition parameters such as the flow rates of H2, O2 and VOCl3, the substrate temperature and the Rf power were optimized, and high deposition rate of 11 Å/s was obtained. Vanadium oxide films with high discharge capacities of up to 408 mAh/g were prepared. The films also showed a superior cycling stability between 4 and 1.5 V at a C/0.2 rate for more than 4400 cycles. The films were amorphous up to a deposition temperature of 300°C, however, deposition on to substrates with textured surfaces facilitated the formation of crystalline films. We demonstrate that both the vanadium oxide material and the PECVD deposition method are very attractive for constructing thin-film rechargeable lithium batteries with high capacity and long-term cyclic stability.

2010 ◽  
Vol 2010 ◽  
pp. 1-27 ◽  
Author(s):  
Michael Lorenz ◽  
Holger Hochmuth ◽  
Christoph Grüner ◽  
Helena Hilmer ◽  
Alexander Lajn ◽  
...  

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.


2008 ◽  
Vol 255 (5) ◽  
pp. 2859-2863 ◽  
Author(s):  
Zhi-Yang Li ◽  
Fuchun Xu ◽  
Qi-Hui Wu ◽  
Jing Li

2014 ◽  
Vol 909 ◽  
pp. 91-94
Author(s):  
Jun Gou ◽  
Hui Ling Tai ◽  
Jun Wang ◽  
De En Gu ◽  
Xiong Bang Wei ◽  
...  

A high selectivity patterning technology of vanadium oxide (VOx) thin film was suggested in this paper. VOxthin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VOxetch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N2. High resolution and low roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VOxetch rate of 74 nm/min, a PR selectivity of 0.96, a Si3N4selectivity of 5 and a SiO2selectivity of 10.


Sign in / Sign up

Export Citation Format

Share Document