Materials Chemistry and Bulk Crystal Growth of Group III Nitrides in Supercritical Ammonia

1997 ◽  
Vol 495 ◽  
Author(s):  
Joseph W. Kolis ◽  
Steven Wilcenski ◽  
Robert A. Laudise
Keyword(s):  
Crystal Growth ◽  
New Products ◽  
Group Iii Nitrides ◽  
Bulk Crystal ◽  
Materials Chemistry ◽  
Bulk Crystal Growth ◽  
Group Iii ◽  
Gallium Nitrides ◽  
Supercritical Ammonia

ABSTRACTReasonably sized crystals of aluminum and gallium nitrides can be grown in supercritical ammonia using chloride and amide as the mineralizer. Best growth was achieved at 380°C in ammonia at 40,000 psi (270 MPa). Under these conditions crystals as large as 0.4 mm could be grown over several days. Attempts to optimize the identity and concentration of the mineralizer, and the acidity of the solution, led to several new products including A1F3(NH3)2.

Three-Dimensional Computations of Transport and Growth for Crystal Growth Systems

2000 ◽  
Author(s):  
Jeffrey J. Derby ◽  
Andrew Yeckel
Keyword(s):  
Finite Element ◽  
Crystal Growth ◽  
Finite Element Methods ◽  
Three Dimensional ◽  
Bulk Crystal ◽  
Time Dependent ◽  
Engineering Systems ◽  
Bulk Crystal Growth ◽  
Strongly Nonlinear ◽  
Parallel Supercomputers

Abstract Modern finite element methods implemented on parallel supercomputers promise to allow the study of three-dimensional, time-dependent continuum phenomena in many engineering systems. This paper shows several examples of the fruitful application of these approaches to bulk crystal growth systems, where strongly nonlinear coupled phenomena are important.

Erratum to “Modeling of facet formation in SiC bulk crystal growth” [CRYS 266 (2004) 313]

2004 ◽  
Vol 268 (1-2) ◽  
pp. 328 ◽  
Author(s):  
I.D Matukov ◽  
D.S Kalinin ◽  
M.V Bogdanov ◽  
S.Yu Karpov ◽  
D.Kh Ofengeim ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Bulk Crystal ◽  
Bulk Crystal Growth ◽  
Facet Formation

Modeling and bulk crystal growth processes: What is to be learned?

2010 ◽  
Author(s):  
Jeffrey J. Derby ◽  
W. Wang ◽  
Katsuo Tsukamoto ◽  
Di Wu
Keyword(s):  
Crystal Growth ◽  
Bulk Crystal ◽  
Growth Processes ◽  
Bulk Crystal Growth

Growth Kinetics and Thermal Stress in AlN Bulk Crystal Growth

2002 ◽  
Author(s):  
Bei Wu ◽  
Ronghui Ma ◽  
Hui Zhang ◽  
Michael Dudley ◽  
Raoul Schlesser ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Temperature Distribution ◽  
Stress Level ◽  
Grown Crystal ◽  
Power Level ◽  
Chemical Species ◽  
Group Iii Nitrides ◽  
Minor Effect ◽  
Group Iii

Group III nitrides, such as GaN, AlN and InGaN, have attracted a lot of attention due to the development of blue-green and ultraviolet light emitting diodes (LEDs) and lasers. In this paper, an integrated model has developed based on the conservation of momentum, mass, chemical species and energy together with necessary boundary conditions that account for heterogeneous chemical reactions both at the source and seed surfaces. The simulation results have been compared with temperature measurements for different power levels and flow rates in a reactor specially designed for nitride crystal growth at NCSU. It is evident that the heat power level affects the entire temperature distribution greatly while the flow rate has minor effect on the temperature distribution. The results also show that the overall thermal stress level is higher than the critical resolved shear stress, which means thermal elastic stress can be a major source of dislocation density in the as-grown crystal. The stress level is strongly dependent on the temperature gradient in the as-grown crystal. Results are correlated well with defects showing in an X-ray topograph for the AlN wafer.

HIGH PRESSURE BULK CRYSTAL GROWTH OF (Ga,Al)N

2008 ◽  
pp. 21-55
Author(s):  
Peter Geiser ◽  
Jan Jun ◽  
Bertram Batlogg ◽  
Janusz Karpinski
Keyword(s):  
High Pressure ◽  
Crystal Growth ◽  
Bulk Crystal ◽  
Bulk Crystal Growth
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