A Comparison of Ferroelectric thin Films Prepared by Sol-Gel, Metalorganic Deposition and Photochemical Methods

1997 ◽  
Vol 495 ◽  
Author(s):  
Y. Shi ◽  
S. L. Blair ◽  
I. Yaroslavsky ◽  
R. H. Hill
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Organic Thin Films ◽  
Amorphous Films ◽  
Photochemical Method ◽  
Photochemical Deposition ◽  
Crystalline Films ◽  
Degree Of Orientation ◽  
Metal Organic ◽  
Metalorganic Deposition

ABSTRACTThe process for generating films of Ba0.5Sr0.5TiO3, and PbZr0.48Ti0.52O3 by photochemical deposition from metal-organic thin films has been investigated. Films have also been prepared by metal-organic and sol-gel deposition for comparison with the photochemical method. All three methods could produce crystalline films of the target materials. Studies of the heating of the amorphous films prepared by each of the methods indicated that similar crystalline films could be prepared by the different methods. Under some conditions the photochemical methods gave the highest degree of orientation of the crystalline films.

PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 THIN FILM ON Pt/Ti/SiO2/Si SUBSTRATE

2010 ◽  
Vol 17 (05n06) ◽  
pp. 445-449 ◽  
Author(s):  
SUHUA FAN ◽  
QUANDE CHE ◽  
FENGQING ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Property ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Si Substrate ◽  
Degree Of Orientation ◽  
Equiaxed Grains

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

The Effect of Hydrolysis Conditions on the Characteristics of PbTiO3 Gels and Thin Films

1986 ◽  
Vol 72 ◽  
Author(s):  
K. D. Budd ◽  
S. K. Dey ◽  
D. A. Payne
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Electronic Ceramics ◽  
Base Catalysts ◽  
Acid And Base ◽  
Crystalline Films ◽  
Continuous Crack ◽  
Free Films ◽  
Hydrolysis Conditions

AbstractSol-gel processing represents a promising method of fabrication for thin films of electronic ceramics which are useful in a number of packaging and device applications. In this study, the influence of acid and base catalysts on the structure of PbTiO3 gels and films (0.1-1.0μm) was investigated, for the purpose of inducing and identifying gel structures which were the most suitable as precursors for thin dielectric layers. Continuous, crack-free films, with dielectric strengths in excess of 106 V/cm were developed. Basic solutions gelled rapidly, phase separated, and were probably more crosslinked than acidic gels. Acidic gels seemed more capable of polymeric rearrangement during drying, yielding denser amorphous structures with microcrystalline regions. High-field dielectric constants (1 MV/m ac) in the range K=30–40, and K=160–170, were determined for amorphous and crystalline films, respectively.

A Study of the Diffusion of Phosphorus in Ni/amorphous NiPx and a-NiPx/a-NiPy. Multilayers

1990 ◽  
Vol 205 ◽  
Author(s):  
C. A. Ross ◽  
L. M. Goldman ◽  
J. A. Barnard ◽  
F. Spaepen
Keyword(s):  
Thin Films ◽  
Grain Boundaries ◽  
Multilayer Thin Films ◽  
Amorphous Films ◽  
Phosphorus Diffusion ◽  
X Ray ◽  
A Value ◽  
Crystalline Films

AbstractAn x-ray technique has been used to measure the diffusion of phosphorus in crystalline Ni/amorphous NiPx and amorphous NiPx/NiPy multilayer thin films produced by electrodeposition. The films have repeat lengths in the range 30–80Å and P contents x, y < 25at.%. A value for the interdiffusivity in amorphous NiPx is derived from measurements on fully amorphous films. The behaviour of partially crystalline films is described in terms of phosphorus diffusion into the nickel grain boundaries.

Ten Analyses Of Sol-Gel Derived And Sputtered PZT Thin Films

1990 ◽  
Vol 200 ◽  
Author(s):  
Cheng-Chen Hsueh ◽  
Martha L. MeCartney
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Ferroelectric Domains ◽  
Metal Organic ◽  
Organic Precursors ◽  
Acid Catalyzed ◽  
Sol Gel Films

ABSTRACTFerroelectric PZT thin films were prepared by sol-gel methods and RF magnetron sputtering. Sputtered PZT fast fired at 650° for 30 minutes showed microporosity. For the sol-gel route, solution precursors had a significant effect on the microstructure of the crystalline PZT films. PZT thin films derived from metal-organic precursors dissolved in n-propanol were observed to have large and microporous spherulitic grains on the order of 2 μm and phase separation in acetic acid-catalyzed films. In contrast, PZT precursors originated from alcohol exchanges with 2-methoxyethanols resulted in dense films with fine grains of ∼0.2 μm and clear evidence of ferroelectric domains. The dense sol-gel films possessed superior dielectric and ferroelectric properties.

Mechanism of the formation of copper-containing fractal-like crystallites in metal-organic thin films: Shape simulation and XANES analysis

2016 ◽  
Vol 253 (11) ◽  
pp. 2217-2224 ◽  
Author(s):  
Galina Yalovega ◽  
Tatiana Myasoedova ◽  
Anton Funik ◽  
Nina Plugotarenko ◽  
Maria Brzhezinskaya ◽  
...  
Keyword(s):  
Thin Films ◽  
Organic Thin Films ◽  
Metal Organic ◽  
Xanes Analysis

Phase Transformations in Sol-Gel PZT Thin Films

2000 ◽  
Vol 623 ◽  
Author(s):  
D.P. Eakin ◽  
M.G. Norton ◽  
D.F. Bahr
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Room Temperature ◽  
Structural Changes ◽  
Sol Gel ◽  
Ex Situ ◽  
Ambient Conditions ◽  
Crystalline Films ◽  
In Situ Heating

AbstractThin films of PZT were deposited onto platinized and bare single crystal NaCl using spin coating and sol-gel precursors. These films were then analyzed using in situ heating in a transmission electron microscope. The results of in situ heating are compared with those of an ex situ heat treatment in a standard furnace, mimicking the heat treatment given to entire wafers of these materials for use in MEMS and ferroelectric applications. Films are shown to transform from amorphous to nanocrystalline over the course of days when held at room temperature. While chemical variations are found between films crystallized in ambient conditions and films crystallized in the vacuum conditions of the microscope, the resulting crystal structures appear to be insensitive to these differences. Significant changes in crystal structure are found at 500°C, primarily the change from largely amorphous to the beginnings of clearly crystalline films. Crystallization does occur over the course of weeks at room temperature in these films. Structural changes are more modest in these films when heated in the TEM then those observed on actual wafers. The presence of Pt significantly influences both the resulting structure and morphology in both in situ and ex situ heated films. Without Pt present, the films appear to form small, 10 nm grains consisting of both cubic and tetragonal phases, whereas in the case of the Pt larger, 100 nm grains of a tetragonal phase are formed.

Solution Synthesis of Thin Films in the SnO2−In2O3System: A Case Study of the Mixing of Sol−Gel and Metal-Organic Solution Processes

2006 ◽  
Vol 18 (3) ◽  
pp. 840-846 ◽  
Author(s):  
Mauro Epifani ◽  
Raül Díaz ◽  
Jordi Arbiol ◽  
Pietro Siciliano ◽  
Joan R. Morante
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Solution Synthesis ◽  
Organic Solution ◽  
Solution Processes ◽  
Metal Organic
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