Low-Temperature, Solution-Based Routes to Nanocrystalline InS Powders and Thin Films

1997 ◽  
Vol 495 ◽  
Author(s):  
Jennifer A. Hollingsworth ◽  
William E. Buhro
Keyword(s):  
Low Temperature ◽  
Elemental Sulfur ◽  
Fused Silica ◽  
Silica Substrate ◽  
Potential Applications ◽  
Temperature Solution ◽  
Indium Metal ◽  
Metal Flux ◽  
Indium Film

ABSTRACTWe have developed several solution-based preparations for nanocrystalline orthorhombic InS, which is a mid band gap semiconductor (2.44 eV) with potential applications in photovoltaics. Various reagents were used as indium (t-Bu3In, t-Bu2InCl) and sulfur (H2S, (TMS)2S) sources. Growth of crystalline powders was dependent upon the addition or in-situ generation of indium metal. These reactions represent the first reported use of a Solution-Liquid-Solid (SLS) mechanism by which semiconductors are grown from a molten metal flux for a system other than the III-V family of semiconductors. The studies on powder preparations were used to develop a new, low-temperature (185 °C) chemical-bath process for depositing a polycrystalline InS thin film. The film was deposited from a solution of t-Bu3In and elemental sulfur onto an indium-coated fused-silica substrate; the indium film acted as the crystallization medium.

In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors

2017 ◽  
Vol 5 (10) ◽  
pp. 2524-2530 ◽  
Author(s):  
Ao Liu ◽  
Shengbin Nie ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Chundan Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Naoh Solution ◽  
Temperature Solution ◽  
One Step ◽  
P Type

Solution-processed p-type Cu2O thin films were fabricated via in-situ reaction of CuI film in NaOH solution and their applications in thin-film transistors were successfully demonstrated.

Low-Temperature Solution-Processed Kesterite Solar Cell Based on in Situ Deposition of Ultrathin Absorber Layer

2015 ◽  
Vol 7 (38) ◽  
pp. 21100-21106 ◽  
Author(s):  
Yi Hou ◽  
Hamed Azimi ◽  
Nicola Gasparini ◽  
Michael Salvador ◽  
Wei Chen ◽  
...  
Keyword(s):  
Solar Cell ◽  
Low Temperature ◽  
Absorber Layer ◽  
Solution Processed ◽  
In Situ Deposition ◽  
Temperature Solution

Low temperature synthesis of graphene hybridized surface defective hierarchical core–shell structured ZnO hollow microspheres with long-term stable and enhanced photoelectrochemical activity

RSC Advances ◽  
2016 ◽  
Vol 6 (42) ◽  
pp. 36058-36068 ◽  
Author(s):  
Susanta Bera ◽  
Atanu Naskar ◽  
Moumita Pal ◽  
Sunirmal Jana
Keyword(s):  
Low Temperature ◽  
Solution Process ◽  
Core Shell ◽  
Solid Core ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Photoelectrochemical Activity ◽  
Temperature Solution

Time dependent structural change (solid → core–shell → hollow) of in situ formed ZnO–graphene (ZG) microspheres by low temperature solution process and their photoelectrochemical stability.

Investigation of GaN epilayers growth mechanisms using in-situ reflectance in MOCVD

2000 ◽  
Vol 648 ◽  
Author(s):  
Matthieu Moret ◽  
Olivier Briot ◽  
Sandra Ruffenach-Clur ◽  
Roger-Louis Aulombard
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Growth Parameters ◽  
Green Light ◽  
Blue Laser ◽  
Annealing Atmosphere ◽  
Growth Mechanisms ◽  
Additional Information ◽  
Potential Applications

AbstractGaN is a wide gap semiconductor which is now used to produce blue and green light emitting diodes, blue laser diodes and which has numerous other potential applications, like high frequency HEMT transistors, UV sensors, etc. A complicated two step process, using a low temperature buffer layer, subsequently annealed and followed by the deposition of the monocrystalline semiconductor was developed, and due to the excellent results obtained following this method, a rush towards applications resulted. There is now a need to investigate in more detail the growth mechanisms, and the influence of the growth parameters, in order to ensure a better reproducibility of the results. In this paper, we report an investigation of the growth mechanisms and the influence of the growth parameters using in-situ reflectance experiments. The reflectance measurements allow us to follow the growth rates, and the changes in the surface morphology (transitions between islands growth and 2D growth). Additional exsitu measurements (AFM ) were performed at different stages of the growth process to ensure additional information. As a result, we demonstrate that the recrystallization of the low temperature buffer layer is a critical step, which is drastically influenced by the composition of the annealing atmosphere (amount of ammonia present in the gas phase), while the deposition temperature and buffer thickness have a moderate effect. We will discuss here the growth mechanisms which may be involved to explain such a behavior.

SEM analysis of DC magnetron sputtered beryllium films

1988 ◽  
Vol 46 ◽  
pp. 960-961
Author(s):  
E. F. Lindsey ◽  
C. W. Price ◽  
E. L. Pierce ◽  
E. J. Hsieh
Keyword(s):  
Fine Structure ◽  
Electron Emission ◽  
Secondary Electron ◽  
Low Voltage ◽  
Ion Beam ◽  
Secondary Electron Emission ◽  
Sem Analysis ◽  
Fused Silica ◽  
Grain Structure ◽  
Silica Substrate

Columnar structures produced by DC magnetron sputtering can be altered by using RF biased sputtering or by exposing the film to nitrogen pulses during sputtering, and these techniques are being evaluated to refine the grain structure in sputtered beryllium films deposited on fused silica substrates. Beryllium is brittle, and fractures in sputtered beryllium films tend to be intergranular; therefore, a convenient technique to analyze grain structure in these films is to fracture the coated specimens and examine them in an SEM. However, fine structure in sputtered deposits is difficult to image in an SEM, and both the low density and the low secondary electron emission coefficient of beryllium seriously compound this problem. Secondary electron emission can be improved by coating beryllium with Au or Au-Pd, and coating also was required to overcome severe charging of the fused silica substrate even at low voltage. The coating structure can obliterate much of the fine structure in beryllium films, but reasonable results were obtained by using the high-resolution capability of an Hitachi S-800 SEM and either ion-beam coating with Au-Pd or carbon coating by thermal evaporation.

In situ Tensile Experiments at Low Temperatures on Niobium Single Crystals by H.V.E.M.

1975 ◽  
Vol 33 ◽  
pp. 58-59
Author(s):  
F. H. Louchet ◽  
L. P. Kubin
Keyword(s):  
Electron Microscope ◽  
Transition Temperature ◽  
Low Temperature ◽  
Slip System ◽  
Low Temperatures ◽  
Tensile Axis ◽  
Image Intensifier ◽  
Screw Dislocations ◽  
Source Operation

Experiments have been carried out on the 3 MeV electron microscope in Toulouse. The low temperature straining holder has been previously described Images given by an image intensifier are recorded on magnetic tape.The microtensile niobium samples are cut in a plane with the two operative slip directions [111] and lying in the foil plane. The tensile axis is near [011].Our results concern:- The transition temperature of niobium near 220 K: at this temperature and below an increasing difference appears between the mobilities of the screw and edge portions of dislocations loops. Source operation and interactions between screw dislocations of different slip system have been recorded.

An in situ and ex situ TEM study of the formation of thin cobalt silicide films by molecular beam epitaxy on the silicon (100) surface

1988 ◽  
Vol 46 ◽  
pp. 884-885
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Metal Base ◽  
In Situ Experiments ◽  
Potential Applications

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.

Role of boundaries in the crystallization of amorphous films

1988 ◽  
Vol 46 ◽  
pp. 626-627
Author(s):  
D. A. Smith
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Nucleation And Growth ◽  
Amorphous Films ◽  
Island Nucleation ◽  
Surface Steps ◽  
Transmission Electron ◽  
Component Systems ◽  
Temperature Deposition

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.

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