Kinetics of Reactions Relevant to the Chemical Vapor Deposition of Indium Compounds

1997 ◽  
Vol 495 ◽  
Author(s):  
M. D. Allendorf ◽  
A. H. McDaniel
Keyword(s):  
Molecular Beam ◽  
Flow Reactor ◽  
Chemical Vapor ◽  
Sampling System ◽  
Measured Activation Energy ◽  
Measured Activation ◽  
System Data ◽  
Indium Compounds ◽  
Kinetics Of ◽  
Good Agreement

ABSTRACTThe kinetics of trimethylindium pyrolysis are investigated in a flow reactor equipped with a molecular-beam mass-spectrometric sampling system. Data are analyzed using a new computational approach that accounts for heat and mass transport in the reactor. The measured activation energy, 46.2 kcal mol−1, is in good agreement with previously reported values.

Effect of C and Ge Concentration On The Thermal Stability of RTCVD Grown Si1-x-yGexCy Alloys

1997 ◽  
Vol 470 ◽  
Author(s):  
Patricia Warren ◽  
Stephane Retzmanick ◽  
Martin Gotza ◽  
Marc Begems
Keyword(s):  
Lattice Constant ◽  
Strain Relaxation ◽  
Mechanical Strain ◽  
Chemical Vapor ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Cubic Silicon Carbide ◽  
Kinetics Of ◽  
Good Agreement

ABSTRACTSi / Si1-x-yGexCy / Si heterostructures containing up to 17 at.% Ge and 1.9 at.% C were grown on (001) silicon by low pressure Rapid Thermal Chemical Vapor Deposition, using a mixture of silane, germane and methylsilane, diluted in hydrogen. The samples were then annealed in a Rapid Thermal Processing furnace, under an atmospheric pressure of nitrogen, at temperatures ranging from 900 to 1130 °C.The samples were characterized using infrared spectroscopy and x-ray diffraction. SIMS profiling and TEM observation were performed on some of the samples.Substitutional C gradually disappeared, either precipitating out to form cubic silicon carbide (β-SiC), or simply vanishing into interstitial positions. In any case, the in-plane lattice constant remained constant after annealing, indicating that there was no mechanical strain relaxation by formation of misfit dislocations. The perpendicular lattice constant increased due to the decrease in substitutional C concentration, as well as it decreased due to the germanium out-diffusion. This variation of the strain during annealing was modeled, and allowed the determination of the kinetics of the substitutional carbon disappearance. The same behavior was observed for all samples. Indeed, the Cs disappearance rate was always increased for samples with higher initial Ge and C concentrations. The kinetics of this precipitation was found in very good agreement with previous published results.

Softening Behavior of Ti6Al4V Alloy during Hot Deformation

2015 ◽  
Vol 828-829 ◽  
pp. 407-412 ◽  
Author(s):  
Paul Micheal Souza ◽  
Hossein Beladi ◽  
Bernard Rolfe ◽  
Rajkumar Singh ◽  
Peter D. Hodgson
Keyword(s):  
Strain Rate ◽  
Microstructural Evolution ◽  
Volume Fraction ◽  
Softening Behavior ◽  
Strain And Strain Rate ◽  
Measured Activation Energy ◽  
Average Grain Size ◽  
Measured Activation ◽  
Equiaxed Grains ◽  
Good Agreement

The effect of strain rate and strain on the hot compression behaviour of Ti6Al4V has been analysed to understand the microstructural evolution and restoration behaviour. Cylindrical samples with partially equiaxed grains were deformed in the α+β region at different thermo-mechanical conditions. EBSD has been used to study the microstructural behaviour and the restoration mechanisms. The microstructural evolution showed a complex restoration behaviour, where both fragmentation and nucleation of new grains have been observed. The volume fraction of the equiaxed grains increased with an increase in the strain, but oppositely decreased with the strain rate. At the same time the average grain size of the equiaxed grains decreased with an increase in both the strain and strain rate. The measured activation energy for deformation revealed a good agreement with reported values in the literature.

Gas-Phase Kinetics of the Self Reactions of the Radicals CH2F and CHF2

2000 ◽  
Vol 214 (5) ◽  
Author(s):  
T. Beiderhase ◽  
Walter Hack ◽  
Karlheinz Hoyermann ◽  
Matthias Olzmann
Keyword(s):  
Gas Phase ◽  
Molecular Beam ◽  
Rate Coefficient ◽  
Flow Reactor ◽  
Main Channel ◽  
Low Energy ◽  
The Self ◽  
Gas Phase Kinetics ◽  
Low Energy Electron ◽  
Kinetics Of

Fluorinated hydrocarbon radical-radical reactions in the gas phase have been studied at low pressure (0.5 ≤ p/mbar ≤ 2) and low temperature (253 ≤ T/K ≤ 333) using the discharge flow reactor molecular beam sampling mass spectrometry (MS) technique. Stable and labile species have been detected by MS applying low energy electron impact as well as multiphoton ionisation.For the combination reactionCHthe rate coefficient kCHis the main channel (k(1b)/kFor the CHFCHFthe rate coefficient was measured as kNo pressure dependence of k

Molecular Beam Mass Spectrometry Studies of the Thermal Decomposition of Tetrakis(dimethylamino)Titanium

1999 ◽  
Vol 606 ◽  
Author(s):  
Carmela C. Amato-Wierda ◽  
Edward T. Norton ◽  
Derk A. Wierda
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Flow Reactor ◽  
Chemical Vapor ◽  
Molecular Beam Mass Spectrometry ◽  
Gas Phase Chemistry ◽  
Temperature Rate ◽  
Phase Chemistry

AbstractTetrakis(dimethylamino)titanium (TDMAT) is an important precursor for TiN, TiCN, and TiSiN thin films in chemical vapor deposition. In order to better understand how the gas phase chemistry influences the formation of these films, the decomposition of TDMAT has been studied in a high-temperature flow reactor (HTFR) by molecular beam mass spectrometry (MBMS). Two kinetic regimes have been observed as a function of temperature. Rate expressions and mechanistic implications will be presented. Further studies are in progress to identify the gas phase species relevant to the decomposition mechanism of TDMAT.

The Thermal Decomposition of Methane. I. Kinetics of the Primary Decompositionto C2H6 + H2; Rate Constant for the Homogeneous Unimolecular Dissociation of Methane and its Pressure Dependence

1975 ◽  
Vol 53 (23) ◽  
pp. 3580-3590 ◽  
Author(s):  
C.-J. Chen ◽  
M. H. Back ◽  
R. A. Back
Keyword(s):  
Rate Constant ◽  
Flow System ◽  
Quantitative Agreement ◽  
Radical Mechanism ◽  
Unimolecular Dissociation ◽  
Static System ◽  
System Data ◽  
Decomposition Of Methane ◽  
Kinetics Of ◽  
Good Agreement

The pyrolysis of methane has been studied in a static system at temperatures of 995, 1038, 1068, and 1103 K and pressures from 25 to 700 Torr. It was concluded that the initial stages of the reaction can be described by a simple homogeneous, nonchain radical mechanism:[Formula: see text]Initial rates of reaction were measured, based on analysis of hydrogen, ethane, and ethylene, and k1 was found to be pressure dependent and homogeneous. Quantitative agreement was obtained with values of k1 calculated by R.R.K.M. theory. Values of A∞ = 2.8 × 1016 s−1 and E∞ = 107.6 kcal/mol were obtained, the latter appreciably greater than the value of E0 = 103 kcal/mol used in the calculations. Comparison of previous shock-tube and flow-system data at temperatures up to 2200 K showed good agreement with values of k1 obtained by extrapolation of the present R.R.K.M. calculations. It was concluded that in all previous studies, the initial dissociation was in its pressure-dependent region. Estimates were also made of the rate constant for the reverse of [1] and showed fair agreement with recent experimental measurements.

Chemical vapor deposition of copper via disproportionation of hexafluoroacetylacetonato(1,5 -cyclooctadiene)copper(I), (hfac)Cu(1,5-COD)

1992 ◽  
Vol 7 (2) ◽  
pp. 261-264 ◽  
Author(s):  
A. Jain ◽  
K.M. Chi ◽  
M.J. Hampden-Smith ◽  
T.T. Kodas ◽  
J.D. Farr ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Chemical Vapor ◽  
Copper Films ◽  
Temperature Range ◽  
Measured Activation Energy ◽  
Measured Activation ◽  
Related Compounds ◽  
By Products

Hot- and cold-wall chemical vapor deposition (CVD) using the volatile copper(I) compound (hfac)Cu(1,5-COD), where hfac = 1,1,1,5,5,5,-hexafluoroacetylacetonate and 1,5-COD = 1,5-cyclooctadiene, as a precursor was carried out in hot-wall and warm-wall, lamp-heated reactors using SiO2 substrates that had been patterned with Pt or W, over a temperature range 120 °C-250 °C. Deposition was observed onto Pt, W, and SiO2 over this temperature range at rates of up to 3750 Å/min to give copper films that contained no detectable impurities by Auger electron spectroscopy and gave resistivities of 1.9-5.7 μ ohm cm. The volatile by-products formed during deposition were 1,5-COD and Cu(hfac)2 and a mass balance was consistent with the quantitative disproportionation reaction: 2(hfac)Cu(1,5-COD) → Cu + Cu(hfac)2 + 2(1,5-COD). The measured activation energy for this CVD reaction was 26(2) kcal/mol. The absence of selectivity for metal surfaces in the presence of SiO2 is in contrast to CVD results for the related compounds (β-diketonate)Cu(PMe3) where β-diketonate = hfac, 1,1,1-trifluoroacetylacetonate (tfac), and acetylacetonate (acac).

Annealing Kinetics of Neutron?Irradiated Aluminium and Copper

1960 ◽  
Vol 13 (2) ◽  
pp. 347 ◽  
Author(s):  
TH Blewitt ◽  
RR Coltman ◽  
CE Klabunde
Keyword(s):  
Activation Energy ◽  
Activation Energies ◽  
Slope Method ◽  
Measured Activation Energy ◽  
Measured Activation ◽  
Kinetics Of ◽  
Constant Activation Energy

Activation energies for the annealing of copper and aluminium following reactor bombardment near 4 OK have been measured in the range from 10 to 40 OK. Both the change in slope method and the isothermal technique method were utilized with the assumption that a constant activation energy existed. Computations of the number of jumps involved from the measured activation energy result in an impossibly small number. It is obvious that the method for determination of the activation energies is not applicable, probably because of the non-uniqueness of the activation energy.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

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