Preparation of Boron Nitride Thin Films by MOCVD

1997 ◽  
Vol 495 ◽  
Author(s):  
Sang-Yeol Lee ◽  
Yong-Gi Jin ◽  
Young-Woo Nam ◽  
Joong Kee Lee ◽  
Dalkeun Park
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Partial Pressure ◽  
Deposition Rate ◽  
Total Pressure ◽  
Deposition Temperature ◽  
Operating Parameters ◽  
Film Characteristics ◽  
Deposited Films ◽  
Reactor Pressure

ABSTRACTBoron nitride thin films were prepared on Si(100) substrate by CVD. Triethylboron and ammonia were employed as precursors and various operating parameters such as reactor pressure, temperature, feed rates of gases were varied to investigate their effects on deposition rate and film characteristics. Total gas pressure in the reactor was varied from atmospheric to I torr. Deposition temperature was in the range 850 – 1,050 °C. Deposition rate increased with partial pressure of TEB but decreased with total pressure in the reactor. Deposited films were examined with SEM, FTIR, XPS, AES, XRD. Prepared films were BN of turbostratic structure.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Effects of C/Si Ratio on the Structure of β-SiC Film by Halide CVD

2014 ◽  
Vol 616 ◽  
pp. 227-231 ◽  
Author(s):  
Ming Xu Han ◽  
Wei Zhou ◽  
Ding Heng Zheng ◽  
Rong Tu ◽  
Song Zhang ◽  
...  
Keyword(s):  
Grain Size ◽  
Deposition Rate ◽  
Total Pressure ◽  
Deposition Temperature ◽  
Preferred Orientation ◽  
Carrier Gas ◽  
Sic Film ◽  
Sic Films

Thick (over 1 mm) β-SiC films were deposited at a deposition temperature of 1823 K and a total pressure of 4 kPa by halide CVD using SiCl4 and CH4as precursors, and H2 as carrier gas. The maximum deposition rate was 1125 μm h−1. The SiC films showed strong (220) preferred orientation. The grain size increased from 20 to 100 μm with increasing C/Si ratio.

Oxygen Atom Induced Deposition of Silicon Dioxide

1992 ◽  
Vol 282 ◽  
Author(s):  
Dimitri A. Levedakis ◽  
Gregory B. Raupp
Keyword(s):  
Silicon Dioxide ◽  
Deposition Rate ◽  
Total Pressure ◽  
Oxygen Radical ◽  
Flow Ratio ◽  
One Dimensional ◽  
Substrate Temperatures ◽  
Oxygen Discharge ◽  
Deposited Films ◽  
Deposition Conditions

ABSTRACTSilicon dioxide was deposited from tetraethylorthosilicate (TEOS) and remote microwave oxygen plasma on a heated silicon substrate in a cold-wall reactor. The deposition rate and film quality were examined as functions of substrate temperature, total pressure, absorbed plasma power and O2:TEOS flow ratio. The deposition reaction exhibited an activation energy of approximately 10 kJ/mol for substrate temperatures in the range of 323–623 K. The deposition rate reached a maximum with increasing total pressure. The rate was found to be a near-linear function of the absorbed microwave power. At fixedabsorbed power the rate reached a maximum with increasing O2:TEOS flow ratio. A one-dimensional mathematical model was developed to predict the oxygen radical concentration at the exit of the afterglow region of the oxygen discharge. Comparisons of the predicted oxygen radical concentrations with the deposition rates at corresponding deposition conditions supports the view that the overall SiO2 deposition reaction is largely controlled by the concentration of oxygen radicals. The average refractive index ofthe deposited films was 1.466 ± 0.011. Fourier transform infra-red (FTIR) transmission spectra showed significant concentrations of hydroxyls in the deposited films.

Influences of deposition rate and oxygen partial pressure on residual stress and microstructure of YSZ thin films

2009 ◽  
Vol 517 (15) ◽  
pp. 4295-4298 ◽  
Author(s):  
Qiling Xiao ◽  
Hongbo He ◽  
Shuying Shao ◽  
Jianda Shao ◽  
Zhengxiu Fan
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Deposition Rate

IMPROVEMENT OF THE SURFACE ROUGHNESS OF LaAlO3 SUBSTRATE BY DEPOSITING ANOTHER LAYER OF LaAlO3

1993 ◽  
Vol 07 (11) ◽  
pp. 743-746
Author(s):  
YONGJUN TIAN ◽  
HUIBIN LU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
ZHENHAO CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Laser Ablation ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality ◽  
Surface Profiles ◽  
Deposited Films

LaAlO 3 thin films have been deposited on (100) LaAlO 3 substrates by pulsed laser ablation. The deposited films showed the (h00) preferential orientations. Surface profiles indicated that the surface roughness of the films decreased with the increase of the oxygen partial pressure. High quality superconducting YBa 2 Cu 3 O 7 thin films have been successfully deposited by laser ablation on the (100) LaAlO 3 substrates with the LaAlO 3 layers.

CVD of Thin Films of Copper and Cobalt from Different Precursors: Growth Kinetics and Microstructure

2000 ◽  
Vol 614 ◽  
Author(s):  
Anil Mane ◽  
K. Shalini ◽  
Anjana Devi ◽  
R. Lakshmi ◽  
M.S. Dharmaprakash ◽  
...  
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Film Growth ◽  
Growth Parameters ◽  
Metal Films ◽  
X Ray ◽  
Cu Films ◽  
Bulk Electrical Conductivity ◽  
Film Microstructure ◽  
Reactor Pressure

ABSTRACTWe have investigated the growth of thin films of Cu and Co by CVD using the β-diketonate complexes of the metals, viz., the respective acetylacetonates, dipivaloylmethanates, and ketocarboxylates. Film growth rate was measured as a function of CVD parameters such as substrate temperature and reactor pressure. Film microstructure was examined by optical microscopy, XRD, SEM, and STM. Electrical resistivity was measured as a function of temperature and film thickness. It was found that film microstructure is a function of the molecular structure of the precursor and of the other growth parameters. For example, Cu films from Cu(II) ethylacetoacetate comprise uniform, fine grains which result in bulk electrical conductivity at a thickness as small as 75nm. Though grown under nearly the same conditions, Cu films from Cu(II) dipivaloylmethanate are porous, with faceted, large crystallites. Cobalt films from Co(II) acetylacetonate are x-ray amorphous even at a deposition temperature of 450°C. It is possible, by choosing CVD parameters, to obtain metal films with microstructures appropriate to devices and to structures of very small dimensions.

OPTICAL AND ELECTRICAL PROPERTIES OF VANADIUM NITRIDE THIN FILMS

1999 ◽  
Vol 13 (07) ◽  
pp. 833-839 ◽  
Author(s):  
M. GHANASHYAM KRISHNA ◽  
A. K. BHATTACHARYA
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Total Pressure ◽  
Optical Constants ◽  
Vanadium Nitride ◽  
Nitrogen Partial Pressure ◽  
Dc Magnetron Sputtering ◽  
Partial Pressures ◽  
Similar Dependence ◽  
Quartz Substrates

Vanadium nitride thin films have been deposited on to quartz substrates by dc magnetron sputtering at two different total pressures and a series of nitrogen partial pressures. The spectral transmittance of these films, in the region 350 to 1500 nm, is strongly dependent on the nitrogen partial pressure during sputtering and relatively insensitive to total pressure. The films became more transparent as the nitrogen partial pressure was decreased at a constant total pressure. The optical constants, refractive index and extinction coefficient, exhibited a similar dependence on the nitrogen partial pressure. The sheet resistivity of the films decreased with increasing nitrogen partial pressure. The values of resistivity indicate that the films are semiconducting rather than metalic.

Comprehensive Approach for the Construction of New Material for Electronic Multipliers

2012 ◽  
Vol 508 ◽  
pp. 215-219 ◽  
Author(s):  
E.S. Vikulova ◽  
K.V. Zherikova ◽  
L.N. Zelenina ◽  
T.P. Chusova ◽  
S.V. Sysoev ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Properties ◽  
Saturated Vapour Pressure ◽  
Saturated Vapour ◽  
New Material ◽  
Temperature Deposition ◽  
Deposition Processes ◽  
Volatile Precursors ◽  
Film Characteristics ◽  
Deposited Films

Volatile Complexes Mg(thd)2(TMEDA) (1) and Cs[Y(ptac)4] (2) (Hthd = 2,2,6,6-Tetramethylheptane-3,5-Dione, TMEDA = N,N,N’,N’-Tetramethylethylenediamine, Hptac = 1,1,1- Trifluoro-5,5-Dimethylhexane-2,4-Dione) Were Synthesized and Characterized. Thermal Properties of (1) and (2) Were Investigated by TG. The Temperature Dependencies of Saturated Vapour Pressure of Compounds Were Measured by Static (for (1)) or Flow (for (2)) Method. The Obtained Data Were Used for Choosing Temperature Parameters of Deposition Mg- and Cs-Containing Films by CVD Using (1) and (2) as Volatile Precursors. MgO Thin Films Were Deposited on Si (100) by Low-Pressure CVD (LPCVD) and Pulse-CVD in Temperature Deposition Range 673-823K. Cs- and Mg,Cs-Containig Films Were Formed by LPCVD. The Deposited Films Were Studied by SEM and AFM, Correlations between Temperature Conditions of Deposition Processes and Film Characteristics Were Found.

Highly (004)-Oriented Texture of γ-LiAlO2 Films by Laser Chemical Vapor Deposition

2014 ◽  
Vol 616 ◽  
pp. 141-144
Author(s):  
Chen Chi ◽  
Hirokazu Katsui ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Total Pressure ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Molar Ratio ◽  
Laser Chemical Vapor Deposition ◽  
Oriented Texture

(004)-oriented γ-LiAlO2films were prepared on poly-crystalline AlN substrates by laser chemical vapor deposition at deposition temperature (Tdep) of 1100–1250 K, molar ratio of Li/Al (RLi/Al) of 1.0–10 and low total pressure (Ptot) of 100–200 Pa. The (004)-oriented γ-LiAlO2films consisted of pyramidal grains with a columnar structure. The deposition rate of (004)-oriented γ-LiAlO2films reached to 65–72 μm h-1.

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