Improvement of Thermal Stability of Metal/Oxide Interface for Electronic Devices
Keyword(s):
ABSTRACTThe nano-meter controlled iron/iron-oxide multilayer materials have been successfully obtained by the pulse reactive sputtering method with high deposition rate. These multilayer demonstrated a good thermal stability of its structure and magnetic properties up to 500°C when a small amount of Si was doped in the structure, whereas the non-doped multilayer degraded at above 300°C. The difference of the oxidation energy between Fe and Si increases the thermal stability of the interface between Fe and Fe-O layer.
2016 ◽
Vol 689
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pp. 959-968
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Keyword(s):
1998 ◽
Vol 08
(PR2)
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pp. Pr2-63-Pr2-66
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2015 ◽
Vol 123
(2)
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pp. 1281-1291
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2012 ◽
Vol 512-515
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pp. 1018-1021
2011 ◽
Vol 197-198
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pp. 606-609
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