Dielectric and Structural Properties of (100) KTa1−xNbxO3 Films Grown on MgO, LaAIO3 and SrTiO3 Substrates by Pulsed Laser Deposition

1997 ◽  
Vol 493 ◽  
Author(s):  
Wontae Chang ◽  
Adriaan C. Carter ◽  
James S. Horwitz ◽  
Steven W. Kirchoefer ◽  
Jeffrey M. Pond ◽  
...  
Keyword(s):  
Dielectric Loss ◽  
Electric Field ◽  
Pulsed Laser Deposition ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Atomic Ratio ◽  
Film Deposition ◽  
Laser Deposition ◽  
Bias Electric Field ◽  
Post Deposition

ABSTRACTKTa1−xNbxO3 (KTN) thin films (-6000 Å) were grown on (100) MgO, (100) LaAlO3 (LAO), and (100) SrTiO3(STO) substrates by pulsed laser deposition (PLD). Deposited films were smooth, single phase and exclusively (100) oriented. KTN films deposited on MgO and LAO substrates were easily cracked after deposition or post deposition heat treatment. The film deformation appeared to be caused by strain due to the lattice mismatch between the film and the substrate. A thin buffer layer of ∼100 Å was used to eliminate the cracking problem. The high volatility of K at the film deposition temperature required excess K to be added to the ablation target. Sintering of the target and post-deposition annealing of the films were done in a sealed Pt coated stainless steel container. Rutherford backscattering showed the films to have a 1 to 1 atomic ratio of K to Ta + Nb. On top of the KTN films, Ag interdigitated capacitors were deposited. Room temperature measurements of capacitance and dielectric loss as a function of bias electric field (0 -80 kV/cm) at 1 to 20 GHz were made. Capacitance and dielectric loss measurements were made as a function of temperature and bias electric field at one MHz and as a function of temperature and frequency at 0V DC bias. The results show the strong potential of KTN for use in frequency agile microwave electronics.

Pulsed Laser Deposition History and Laser-Target Interactions

MRS Bulletin ◽  
1992 ◽  
Vol 17 (2) ◽  
pp. 30-36 ◽  
Author(s):  
Jeff Cheung ◽  
Jim Horwitz
Keyword(s):  
Thin Film ◽  
Laser Beam ◽  
Pulsed Laser Deposition ◽  
Mechanical Energy ◽  
Pulsed Laser ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Deposition ◽  
Small Branch ◽  
The Impact

The laser, as a source of “pure” energy in the form of monochromatic and coherent photons, is enjoying ever increasing popularity in diverse and broad applications from drilling micron-sized holes on semiconductor devices to guidance systems used in drilling a mammoth tunnel under the English Channel. In many areas such as metallurgy, medical technology, and the electronics industry, it has become an irreplaceable tool.Like many other discoveries, the various applications of the laser were not initially defined but were consequences of natural evolution led by theoretical studies. Shortly after the demonstration of the first laser, the most intensely studied theoretical topics dealt with laser beam-solid interactions. Experiments were undertaken to verify different theoretical models for this process. Later, these experiments became the pillars of many applications. Figure 1 illustrates the history of laser development from its initial discovery to practical applications. In this tree of evolution, Pulsed Laser Deposition (PLD) is only a small branch. It remained relatively obscure for a long time. Only in the last few years has his branch started to blossom and bear fruits in thin film deposition.Conceptually and experimentally, PLD is extremely simple, probably the simplest among all thin film growth techniques. Figure 2 shows a schematic diagram of this technique. It uses pulsed laser radiation to vaporize materials and to deposit thin films in a vacuum chamber. However, the beam-solid interaction that leads to evaporation/ablation is a very complex physical phenomenon. The theoretical description of the mechanism is multidisciplinary and combines equilibrium and nonequilibrium processes. The impact of a laser beam on the surface of a solid material, electromagnetic energy is converted first into electronic excitation and then into thermal, chemical, and even mechanical energy to cause evaporation, ablation, excitation, and plasma formation.

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

Pulsed Laser Deposition of BaxSr1−xTiO3 Films on MgO, LaAlO3 and SrTiO3 for Tunable Microwave Applications

1998 ◽  
Vol 541 ◽  
Author(s):  
Wontae Chang ◽  
James S. Horwitz ◽  
Won-Jeong Kim ◽  
Jeffrey M. Pond ◽  
Steven W. Kirchoefer ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Electric Field ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Dielectric Constants ◽  
Laser Deposition ◽  
Film Stress ◽  
Donor Acceptor ◽  
Bst Films

AbstractSingle phase BaxSr1−xTiO3 (BST) films (∼0.5-7 μm thick) have been deposited onto single crystal substrates (MgO, LaAlO3, SrTiO3) by pulsed laser deposition. Silver interdigitated electrodes were deposited on top of the ferroelectric film. The room temperature capacitance and dielectric Q (1/tanδ) of the film have been measured as a function of electric field (≤80 kV/cm) at 1 - 20 GHz. The dielectric properties of the film are observed to strongly depend on substrate type and post-deposition processing. After annealing (≤1000° C), it was observed that the dielectric constant and % tuning decreased and the dielectric Q increased for films deposited onto MgO, and the opposite effect was observed for films deposited onto LaA1O3. Presumably, this change in dielectric properties is due to the changes in film stress. Very thin (∼50 Å) amorphous BST films were successfully used as a stress-relief layer for the subsequently deposited crystalline BST (∼5000 Å) films to maximize % tuning and dielectric Q. Films have been deposited from stoichiometric targets and targets that have excess Ba and Sr. The additional Ba and Sr has been added to the target to compensate for deficiencies in Ba and Sr observed in the deposited BST (x=0.5) films. Films deposited from compensated targets have higher dielectric constants than films deposited from stoichiometric targets. Donor/acceptor dopants have also been added to the BST target (Mn, W, Fe ≤4 mol.%) to further improve the dielectric properties. The relationship between the dielectric constant, the dielectric Q, the change in dielectric constant with electric field is discussed.

Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film

2008 ◽  
Vol 368-372 ◽  
pp. 308-311
Author(s):  
F.K. Shan ◽  
G.X. Liu ◽  
Byoung Chul Shin ◽  
Won Jae Lee ◽  
W.T. Oh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Atomic Ratio ◽  
Laser Deposition ◽  
Morphological Properties ◽  
High Quality ◽  
Atomic Force ◽  
Different Temperatures ◽  
Zno Powder

High-quality In2O3 powder and ZnO powder had been used to make the ceramic target and the atomic ratio of 1 to 1 of indium and zinc had been prepared in this study. The alloyed thin films had been deposited on sapphire (001) substrates at different temperatures (100–600°C) by using pulsed laser deposition (PLD) technique. An x-ray diffractometer and an atomic force microscope were used to investigate the structural and morphological properties of the alloyed thin films. It was observed that the alloyed thin films deposited at the temperatures lower than 300°C were amorphous, and the alloyed thin films deposited at high temperatures were crystallized. A spectrophotometer was used to investigate the transmittances of the alloyed thin films. It was found that the alloyed thin films were of high quality. The band gap energies of the alloys were calculated by linear fitting the sharp absorption edges of the transmittance spectra. The Hall measurements were also carried out to identify the electrical properties of the thin films.

SrTiO3 Thin Films Deposition Using Pulsed Laser Deposition Technique

2013 ◽  
Vol 789 ◽  
pp. 72-75
Author(s):  
Pia Dinari ◽  
Christian Chandra ◽  
Joko Suwardy ◽  
Salim Mustofa ◽  
Yudi Darma
Keyword(s):  
Pulsed Laser Deposition ◽  
Thermal Annealing ◽  
Pulsed Laser ◽  
Film Deposition ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Thermal Annealing Process ◽  
Thermal Stability Of

Strontium titanate (SrTiO3) thin film has been deposited on Si (100) substrate using pulsed laser deposition technique. Film deposition was carried out at low temperature (150°C) by maintained the pressure at 10-4 Torr. Nanometer-thick SrTiO3 film on Si substrate was characterized using SEM, AFM, XRD, and Raman Spectroscopy. SEM and AFM images show that SrTiO3 film has growth on Si substrate uniformly. Raman and XRD spectroscopy also support the growth of SrTiO3 film on Si substrate. Furthermore, to investigate the effect of post-deposition thermal annealing, the samples were annealed up to 900°C. Thermal stability of SrTiO3/Si structure was studied by mean XRD spectra. The X-Ray Diffraction pattern indicates the crystallinity improvement through atomic arrangements during thermal annealing process.

Sign in / Sign up

Export Citation Format

Share Document