Dielectric Properties of Sputtered BST on Ir Electrodes

1997 ◽  
Vol 493 ◽  
Author(s):  
B. E. White ◽  
Peir Y. Chu ◽  
Sufi Zafar ◽  
V. Balu ◽  
D. Gentile ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Film Thickness ◽  
Barium Strontium Titanate ◽  
Dielectric Film ◽  
Capacitance Density ◽  
Barium Strontium ◽  
Pt Electrodes ◽  
Interfacial Capacitance

ABSTRACTThe dielectric constant and dispersion of sputtered barium strontium titanate (BST) thin films deposited on Ir electrodes have been measured as a function of frequency and dielectric film thickness. Based on the measured variation in capacitance density with BST film thickness, an interfacial capacitance and thin film capacitance have been extracted. The variation of the interfacial capacitance density and the thin film capacitance density with frequency indicates that the majority of dispersion measured for BST deposited on Ir electrodes is due to the interfacial capacitance, in contrast to results found for Pt electrodes [1]. The temperature dependence of the interfacial capacitance and thin film capacitance has also been measured for these electrodes.

scholarly journals KARAKTERISASI KAPASITOR BARIUM STRONTIUM TITANAT (BST) Ba0,75 Sr0,25 TiO3 , YANG DIBUAT MENGGUNAKAN METODE SOL-GEL

2019 ◽  
Vol 16 (1) ◽  
pp. 65
Author(s):  
Rahmi Dewi ◽  
Tiara Pertiwi ◽  
Krisman Krisman
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Dielectric Constant ◽  
Impedance Spectroscopy ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sol Gel ◽  
Barium Strontium ◽  
Scanning Electron

The thin film of Barium Strontium Titanate (BST) has been studied withcomposition ofby using sol-gel method that annealed in temperature of 600oC and 650oC. The thin film of BST is characterized by using Field Emission Scanning Electron Microscopy (FESEM) and an impedance spectroscopy. The results of  FESEM characterization for samples in temperature of 600oC and 650oC are 55.83 nm and 84.88 nm in thickness respectively. The result of impedance spectroscopy characterization given frequency values obtained by the impedance value of real and imaginary.The capacitance value at a frequency of 20 Hz from a thin film of BST in temperature of 600oC and 650oC are 69.36Fand138.70F. The dielectric constant of the thin film of BST in temperature of 600oC and 650oC are 22.17 dan 131.56 respectively.

Interface Structure and Dielectric Properties of SrTiO3 Thin Film Sputter-Deposited onto Si Substrates

1990 ◽  
Vol 200 ◽  
Author(s):  
S. Matsubara ◽  
T. Sakuma ◽  
S. Yamamichi ◽  
H. Yamaguchi ◽  
Y. Miyasaka
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Film Thickness ◽  
Noble Metals ◽  
Film Surface ◽  
Cross Sectional ◽  
Capacitance Density ◽  
Barrier Layers ◽  
Si Substrates

ABSTRACTSrTiO3 thin film preparation onto Si substrates using RF magnetron sputtering has been studied for a high capacitance density required for the next generation of LSI's. Structural and chemical analysis on the interface between SrTiO3 film and Si was carried out with cross-sectional TEM, EDX, and AES. Dielectric properties were measured on AuTi/SrTiO3/Si/Ti/Au capacitors. The as-grown dielectric films on Si were analyzed and found to consist of three layers; SiO2, amorphous SrTiO3 and crystalline SrTiO3, from interface toward film surface. By annealing at 600 °C, the amorphous SrTiO3 layer was recrystallized, and consequently the capacitance value increased. A typical specific capacitance was 4.7 fF/μm2 and the leakage current was in the order of 10−8 A/cm2, for 180 nm thick SrTiO3 film. The dielectric constant decreased from 147 to 56 with decreasing SrTiO3 film thickness from 480 nm to 80 nm. This is due to the low dielectric constant SiO2 layer (ε=3.9) at the interface. From the film thickness dependence of the ε value, the SiO2 layer thickness was calculated to be 3.9 nm, which agreed well with the value directly observed in the TEM.To avoid SiO2 layer formation, barrier layers between SrTiO3 and Si have been studied. Among various refractory and noble metals, RuSi and a multi-layer of Pt/Ti have been found to be promising candidates for the barrier material. When RuSi film or Pt/Ti film was formed between SrTiO3 film and Si substrate, dielectric constant of about 190 was obtained in dependent of the SrTiO3 film thickness in the range of 80–250 nm. Analysis on the barrier layers was performed by means of RBS, XPS and XRD.

Radio Frequency (RF) Magnetron Sputtered Barium Strontium Titanate (BST) Thin Film

2017 ◽  
Vol 727 ◽  
pp. 942-946 ◽  
Author(s):  
Juan Li ◽  
Cong Chun Zhang ◽  
Yan Lei Wang ◽  
Yang Gao ◽  
Xiao Lin Zhao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Perovskite Phase ◽  
Rf Magnetron Sputtering ◽  
Barium Strontium ◽  
Metal Insulator Metal ◽  
Bst Thin Film

Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system. The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated. The dielectric properties of the thin films are investigated. The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric. Perovskite phase can be observed in the thin film annealed in oxygen at 750 °C for 30 min. A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique. The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6×10-6 A/cm2 and 5.35×10-8 A/cm2 respectively.

scholarly journals Study of the Layer-Type BST Thin Film with X-ray Diffraction and X-ray Photoelectron Spectroscopy

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 578
Author(s):  
Agata Lisińska-Czekaj ◽  
Dionizy Czekaj
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Photoelectron Spectroscopy ◽  
Chemical Compositions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barium Strontium ◽  
Bst Thin Film

In the present paper, results of X-ray photoelectron studies of electroceramic thin films of barium strontium titanate, Ba1−xSrxTiO3 (BST), composition deposited on stainless-steel substrates are presented. The thin films were prepared by the sol-gel method. A spin-coating deposition of BST layers with different chemical compositions was utilized so the layer-type structure of (0-2) connectivity was formed. After the deposition, the thin-film samples were heated in air atmosphere at temperature T = 700 °C for 1 h. The surfaces of BST thin films subjected to thermal treatment were studied by X-ray diffraction. X-ray diffraction measurements confirmed the perovskite-type phase for all grown thin-film samples. The oxidation states of the elements were examined by the X-ray photoelectron spectroscopy method. X-ray photoelectron spectroscopy survey spectra as well as high-resolution spectra (photo-peaks) of the main metallic elements, such as Ti, Ba, and Sr, were compared for the layer-type structures, differing in the deposition sequence of the barium strontium titanate layers constituting the BST thin film.

Influence of Strontium Concentration on the Microstructure and Electrical Properties of Sol-Gel Derived Barium Strontium Titanate Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
M.C. Gust ◽  
L.A. Momoda ◽  
M.L. Mecartney
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Grain Size ◽  
Barium Strontium Titanate ◽  
Sol Gel ◽  
Heat Treating ◽  
Si Substrates ◽  
Barium Strontium ◽  
Average Grain Size ◽  
Alkoxide Precursors

AbstractBaxSrl−xTiO3 thin films with varying Sr concentration were prepared on Pt coated Si substrates using methoxypropoxide based alkoxide precursors. Films were crystallized by heat treating at 700°C for 30 minutes in an oxygen atmosphere after deposition of each layer. Film thickness ranged from 230 to 260 nm. No evidence of tetragonality was observed in any of the compositions. Films with higher Sr concentrations had a larger average grain size, larger grain size distribution, and increased (111) orientation on (111) oriented Pt. The highest dielectric constant of ˜400 was found for Ba 0.5Sr0.5TiO3, although no direct correlation could be made between the composition and dielectric properties.

Relation between Electro-Optic Effect and Dielectric Permittivity of Ba0.5Sr0.5TiO3 Thin Films

2013 ◽  
Vol 566 ◽  
pp. 20-24
Author(s):  
Kotaro Takeda ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Permittivity ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
High Tunability ◽  
Barium Strontium ◽  
Electro Optic ◽  
Ionic Mass ◽  
Complex Admittance

The relation between the dielectric tunability and the electro-optic (EO) effect of barium strontium titanate (Ba0.5Sr0.5TiO3) thin film was discussed. The tunability of dielectric permittivity calculated from the complex admittance with planer electrodes reached to 53.1%, and the tunability of birefringence by EO effect was 0.6%. The birefringence change from EO effect was much lower than the tunability of dielectric permittivity. The materials with high tunability do not always exhibit high EO effect. This is concluded to arise due to the ionic mass in the EO materials.

scholarly journals A Highly Tunable Barium Strontium Titanate Thin Film MIM Varactor With Floating Metal

2021 ◽  
Author(s):  
S Nath
Keyword(s):  
Thin Film ◽  
Barium Strontium Titanate ◽  
Coplanar Waveguide ◽  
Frequency Range ◽  
Metal Insulator ◽  
Capacitance Density ◽  
Barium Strontium ◽  
Metal Insulator Metal ◽  
Field Dependent ◽  
Bst Thin Film

A ferroelectric metal insulator metal (MIM) varactor structure incorporating a floating metal and coplanar waveguide (CPW) has been introduced here. The work of the proposed varactor is based on the field-dependent material properties of (Ba,Sr)TiO3 (BST) thin film. A capacitance tunability of 44% has been achieved for the bias voltage of 0 V to 10 V over a frequency range of 1 GHz to 3 GHz. The proposed varactor structure yields a compact area, high capacitance density, and reduced mask process (2 masks)

scholarly journals A Highly Tunable Barium Strontium Titanate Thin Film MIM Varactor With Floating Metal

2021 ◽  
Author(s):  
S Nath
Keyword(s):  
Thin Film ◽  
Barium Strontium Titanate ◽  
Coplanar Waveguide ◽  
Frequency Range ◽  
Metal Insulator ◽  
Capacitance Density ◽  
Barium Strontium ◽  
Metal Insulator Metal ◽  
Field Dependent ◽  
Bst Thin Film

A ferroelectric metal insulator metal (MIM) varactor structure incorporating a floating metal and coplanar waveguide (CPW) has been introduced here. The work of the proposed varactor is based on the field-dependent material properties of (Ba,Sr)TiO3 (BST) thin film. A capacitance tunability of 44% has been achieved for the bias voltage of 0 V to 10 V over a frequency range of 1 GHz to 3 GHz. The proposed varactor structure yields a compact area, high capacitance density, and reduced mask process (2 masks)

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