Efficient AB Initio Tight Binding

1997 ◽  
Vol 491 ◽  
Author(s):  
Andrew Horsfield ◽  
Steven David Kenny

ABSTRACTTight binding is often seen as a middle ground method, lying between accurate ab iniiio methods, and fast empirical potential methods. The challenge is to make tight binding both as fast and as accurate as possible. One way to achieve this is to take established ab initio methods, and apply systematic approximations and efficient numerical techniques to obtain the greatest possible speed. A recently developed method, employing this approach, is described results presented for silicon, and recent developments (including fully self-consistent extensions) are reported.

1997 ◽  
Vol 491 ◽  
Author(s):  
M. Kohyama ◽  
N. Arai ◽  
S. Takeda

ABSTRACTComplex defects in Si and SiC such as coincidence tilt boundaries, planar defects and self-interstitial clusters were dealt with by using the transferable tight-binding method for Si and the self-consistent tight-binding method for SiC. These results have been compared with ab initio calculations of similar configurations. Essential features of the tight-binding results have been supported by the ab initio results. Especially, the agreement on stable atomic configurations is good, although there exits a tendency that energy increases are somewhat overestimated by the tight-binding methods. Serious faults have been found for the electronic structure by the tight-binding method for SiC.


2021 ◽  
pp. 107945
Author(s):  
Ambroise van Roekeghem ◽  
Jesús Carrete ◽  
Natalio Mingo

2005 ◽  
Vol 31 (8) ◽  
pp. 585-595 ◽  
Author(s):  
D. A. Areshkin ◽  
O. A. Shenderova ◽  
J. D. Schall ◽  
D. W. Brenner

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