A Novel Scheme for Accurate Md Simulations of Large Systems

1997 ◽  
Vol 491 ◽  
Author(s):  
Alessandro De Vita ◽  
Roberto Car

ABSTRACTWe present a simple and informationally efficient approach to electronic-structure-based simulations of large material science systems. The algorithm is based on a flexible embedding scheme, in which the parameters of a model potential are fitted at run time to some precise information relevant to localised portions of the system. Such information is computed separately on small subsystems by electronic-structure “black box” subprograms, e.g. based on tight-binding and/or ab initio models. The scheme allows to enforce electronic structure precision only when and where needed, and to minimise the computed information within a desired accuracy, which can be systematically controlled. Moreover, it is inherently linear scaling, and highly suitable for modern parallel platforms, including those based on non-uniform processing. The method is demonstrated by performing computations of tight-binding accuracy on solid state systems in the ten thousand atoms size scale.

1997 ◽  
Vol 482 ◽  
Author(s):  
Derrick E. Boucher ◽  
Zoltán A. Gál ◽  
Gary G. DeLeo ◽  
W. Beall Fowler

AbstractThe electronic structure, geometry and energetics of Ga vacancy pairs and N vacancy pairs in both wurtzite and zincblende GaN are investigated via molecular dynamics (MD) simulations using an empirical tight-binding (TB) model with total energy capabilities and supercells containing up to 216 atoms. Our calculations suggest that, by pairing, N vacancies, which in isolation act as shallow donors, can lower their collective formation energy by about 5 eV. In doing so, however, these N vacancies lose their shallow-donor character as the lattice relaxes in response to this aggregation. Contrasting with the N vacancies, the Ga vacancies are found to retain their isolated shallow acceptor behavior and do not gain significant energy upon aggregation. The possible implications for larger aggregate defects are discussed.


1996 ◽  
Vol 446 ◽  
Author(s):  
Martina E. Bachlechner ◽  
Ingvar Ebbsjö ◽  
Rajiv K. Kalia ◽  
Priya Vashishta

AbstractStructural correlations at the Si(111)/Si3N4(0001) interface are studied using the molecular dynamics (MD) method. In the bulk, Si is described by the Stillinger-Weber potential and Si3N4 by an interaction potential which contains two-body (steric, Coulomb, electronic polarizabilities) and three-body (bond bending and stretching) terms. At the interface, the charge transfer from silicon to nitrogen is taken from LCAO electronic structure calculations. Using these Si, Si3N4 and interface interactions in MD simulations, the interface structure (atomic positions, bond lengths, and bond angles) is determined. Results for fracture in silicon are also presented.


1997 ◽  
Vol 11 (20) ◽  
pp. 2405-2423 ◽  
Author(s):  
Kazumoto Iguchi

A tight-binding model is formulated for the calculation of the electronic structure of a double strand of deoxyribonucleic acid (DNA). The theory is applied to DNA with a particular structure such as the ladder and decorated ladder structures. It is found that there is a novel type of metal–insulator transitions due to the hopping anisotropy of the system. A metal-semimetal-semiconductor transition is found in the former and an effective semiconductor-metal transition at finite temperature in the latter, as the effect of base paring between two strands of DNA is increased. The latter mechanism may be responsible for explaining the Meade and Kayyem's recent observation.


Sign in / Sign up

Export Citation Format

Share Document