Recent Progress of Amorphous Silicon Solar Cell Technology

1985 ◽  
Vol 49 ◽  
Author(s):  
Y. Hamakawa
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Recent Progress ◽  
Energy Gap ◽  
Low Cost ◽  
Photovoltaic Performance ◽  
Silicon Alloys ◽  
Amorphous Silicon Solar Cell ◽  
Application Fields

AbstractA review is given on recent progress in the amorphous silicon solar cells and their technologies. Firstly, some unique advantages of amorphous silicon as a low cost solar cell material are pointed out, and its significant position in the photovoltaic project are discussed. Secondly, newly developed key technologies for improving the photovoltaic performance are demonstrated from the film quality improvement to new junction structure solar cells with a wide and narrow energy gap amorphous silicon alloys. Then, current state of the art in the cell performance are summarized. In the final part, recent feature of the industrializations in both consumer and power application fields are overviewed.

Recent progress of amorphous silicon solar cell applications and systems

1996 ◽  
Vol 8 (1-4) ◽  
pp. 390-395 ◽  
Author(s):  
Hisaki Tarui ◽  
Shinya Tsuda ◽  
Shoichi Nakano
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Solar Cell ◽  
Recent Progress ◽  
Amorphous Silicon Solar Cell

Amorphous Silicon Alloy Materials and Solar Cells Near the Threshold of Microcrystallinity

1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yang ◽  
S. Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Triple Junction ◽  
High Efficiency ◽  
Spectral Response ◽  
High Quality ◽  
Silicon Alloys ◽  
Solar Cell Performance ◽  
Hydrogen Dilution

AbstractOne of the most effective techniques used to obtain high quality amorphous silicon alloys is the use of hydrogen dilution during film growth. The resultant material exhibits a more ordered microstructure and gives rise to high efficiency solar cells. As the hydrogen dilution increases, however, a threshold is reached, beyond which microcrystallites begin to form rapidly. In this paper, we review some of the interesting features associated with the thin film materials obtained from various hydrogen dilutions. They include the observation of linear-like objects in the TEM micrograph, a shift of the principal Si TO band in the Raman spectrum, a sharp, low temperature peak in the H2 evolution spectrum, a shift of the wagging mode in the IR spectrum, and a narrowing of the Si (111) peak in the X-ray diffraction pattern. These spectroscopic tools have allowed us to optimize deposition conditions to near the threshold of microcrystallinity and obtain desired high quality materials. Incorporation of the improved materials into device configuration has significantly enhanced the solar cell performance. Using a spectral-splitting, triple-junction configuration, the spectral response of a typical high efficiency device spans from below 350 nm to beyond 950 nm with a peak quantum efficiency exceeding 90%; the triple stack generates a photocurrent of 27 mA/cm2. This paper describes the effect of the improved materials on various solar cell structures, including a 13% active-area, stable triple-junction device.

Amorphous Silicon Solar Cell Techniques for High Temperature and/or Reactive Deposition Conditions

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Kanbe ◽  
T. Komaru ◽  
K. Fukutani ◽  
T. Kamiya ◽  
C.M. Fortmann ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Solar Cell ◽  
Hydrogen Diffusion ◽  
Hydrogen Reduction ◽  
Poor Performance ◽  
N Deposition ◽  
Solar Cell Performance ◽  
Amorphous Silicon Solar Cell

AbstractSeveral promising new methods for amorphous silicon solar cell preparation involve high substrate temperatures and/or very reactive atmospheres. When incorporated into solar cells, the performance of these layers has often been less than expected due to enhanced diffusion and/or chemical reactions. This poor performance results from the harsh deposition environments. Deleterious effects include darken of TCO coated glass substrates due to hydrogen diffusion to and hydrogen reduction at the TCO interface when solar cells are prepared in the p-i-n deposition sequence. Alternatively, the deposition of TCO layers onto amorphous layers also involves rather harsh oxidizing conditions that have a deleterious effect on the top most amorphous silicon-based p-layers. Strategic use of blocking layers results in remarkably improved solar cell performance. A thin Cr layer (probably becoming Cr2O3) shows ability to improve the performance of both n-ip and p-i-n solar cells by inhibiting both O and H diffusion.

The Research on Solar Cell of a Novel Ribbon Silicon Material

2013 ◽  
Vol 676 ◽  
pp. 103-107
Author(s):  
Jian Gong Li ◽  
Peng Wu ◽  
Peng Yu ◽  
Shuai Li
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Polycrystalline Silicon ◽  
Low Cost ◽  
Photovoltaic Performance ◽  
Metallurgical Grade Silicon ◽  
Silicon Material ◽  
Theoretical Support ◽  
The Cost ◽  
Diffusion Of Impurities

Ribbon silicon material is specially designed for solar cell wafers. In this paper, a novel ribbon silicon material “dipping method” has been designed in order to lower the cost of solar cell. The principle and procedure of dipping method were described. In addition, the diffusion of impurities in the silicon wafer and its influence on the efficiency of solar cells were investigated. The photovoltaic performance of polycrystalline silicon solar cells which were based on the metallurgical grade silicon substrate with the thickness of 600μm, was simulated by AMPS1-D software. And some import parameters were obtained including I-V characteristic, 17.004% conversion efficiency. This artic is provided theoretical support to the industrial production of solar cells by dipping method, and it will open a new road to production low cost solar cell.

Influence of Annealing of PCDTBT:PC70BM on the Performance of Polymer Solar Cells

2015 ◽  
Vol 748 ◽  
pp. 45-48
Author(s):  
Shi Yan ◽  
Long Feng Lv ◽  
Yan Bing Hou
Keyword(s):  
Solar Cells ◽  
Molecular Orbital ◽  
Energy Gap ◽  
Bulk Heterojunction ◽  
Polymer Solar Cells ◽  
Low Cost ◽  
Photovoltaic Performance ◽  
Energy Difference ◽  
Large Area ◽  
Donor And Acceptor

Bulk-heterojunction polymer solar cells (BHJ-PSCs) have attracted considerable attention because of their unique advantages of lightweight, low cost, mechanical flexibility and suitable for large-area fabrication [1–3]. In the last decades, much attention has been paid to the donor and acceptor system P3HT:PCBM, However, because of the relatively large bandgap of P3HT (∼1.9 eV) and the relatively small energy difference between the lowest unoccupied molecular orbital (LUMO) of PCBM and the highest occupied molecular orbital (HOMO) of P3HT, the photovoltaic performance of the PSCs based on P3HT:PCBM is still significantly lower than the inorganic solar cells. Recently more work has been done on the novel donor materials which have a reduced energy gap with an ability of harvesting more of the sun’s spectral emission and a high charge carriers mobility for charge transport. One of the most promising new donor polymer is poly [N-9"-hepta-decanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3' -benzothiadiazole)] (PCDTBT) with a HOMO level of 5.5eV which is 0.4 eV down-shifted than that of P3HT. When PCDTBT is blended with the fullerene acceptor PC70BM, it showed excellent photovoltaic performance with a power conversion efficiency of ∼ 6%. [6]

scholarly journals A Review of Different Techniques for Improving the Performance of Amorphous Silicon based Solar Cells

2019 ◽  
Vol 01 (02) ◽  
pp. 172-181 ◽  
Author(s):  
Ahmed Idda ◽  
Leila Ayat ◽  
said Bentouba ◽  
◽  
◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Defect Density ◽  
Low Cost ◽  
Wide Band ◽  
Optimization Techniques ◽  
Absorber Layer ◽  
Window Layer

Hydrogeneted amorphous silicon (a-Si:H) based solar cells are promising candidates for future developments in the photovoltaic industry. In fact, amorphous silicon technology offers significant advantages including low cost fabrication and possibility to deposition on flexible substrat as well as low temperature fabrication. Much progress has been made since the first single junction cell in amorphous silicon made in 1976 by Carlson and Wronski. However, the performance of the solar cells based on a-Si:H is limited by the high defect density and degradation induced by exposure to light, or Staebler-Wronski effect. To become competitive, the performance of the solar cells based on a-Si:H must be improved. In order to improve the performance of a-Si:H solar cells, much research is directed to optimization techniques. The improvement in performance is therefore based on the optimization of the different layers of the solar cell, in particular, the window layer and the absorber layer (intrinsic). The aim of this work is to give an overview on the different techniques and strategies that is used to improve the performance of solar cell. This work is therefore focus in three main areas: first, optimization of window layer, in particular, the p/i interface using wide band gap alloys such as a-SiC:H, second development of high quality absorber layer using band gap engineering, and alloys such as a-SiGe:H. last, optimizing n-type layer and i/n interface.

scholarly journals Nanostructured Inorganic Solar Cells

Green ◽  
2011 ◽  
Vol 1 (1) ◽  
Author(s):  
Kevin P. Musselman ◽  
Lukas Schmidt-Mende
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electricity Generation ◽  
Recent Progress ◽  
Low Cost ◽  
Lower Grade ◽  
Self Assembling ◽  
The Cost

AbstractRecent progress in the development of nanostructured inorganic solar cells is reviewed. Nanostructuring of inorganic solar cells offers the possibility of reducing the cost of photovoltaics by allowing smaller amounts of lower-grade photovoltaic semiconductors to be used. Various fabrication methods used to nanostructure traditional photovoltaic semiconductors are detailed and the performance of resulting devices is discussed. The synthesis of solar cells by solution-based methods using less traditional, abundant materials is identified as a promising route to widescale photovoltaic electricity generation, and nanostructured solar cell geometries are highlighted as essential in this approach. Templating and self-assembling methods used to produce appropriate low-cost nanostructures from solutions are detailed, and the performance of preliminary ultra-low-cost cells made with these structures is reviewed.

Optical Simulations of the Effects of Transparent Conducting Oxide Interface Layers on Amorphous Silicon Solar Cell Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
Gelio M. Ferreira ◽  
Andre S. Ferlauto ◽  
Pablo I. Rovira ◽  
Chi Chen ◽  
Hien V. Nguyen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Cell Structure ◽  
Transparent Conducting Oxide ◽  
Oxide Interface ◽  
Solar Cell Performance ◽  
Beneficial Effects ◽  
Amorphous Silicon Solar Cell ◽  
Interface Layers

ABSTRACTSpectroscopic ellipsometry (SE) analysis of so-called “specular” (macroscopically smooth) and “textured” (macroscopically rough) thin film amorphous silicon (a-Si:H) based solar cell structures demonstrates the need to incorporate interface layers into the multilayer stack in order to simulate the observed Stokes vector of the specularly-reflected beam. In most cases, these layers can be attributed to microscopic roughness (e.g., at the SnO2/p-layer/i-layer interface in a-Si:H p-i-n solar cells), as verified by atomic force microscopy (AFM). In limited cases, the layers may include regions wherein chemical intermixing also occurs (e.g., at the ZnO/Ag interface in back-reflectors), particularly for overlying films prepared by sputtering. In spite of the clear evidence for the existence of interface layers, they have been neglected in previous simulations of the optical quantum efficiency (QE) of the solar cells. In this study, we incorporate the experimentally- observed characteristics of interface layers as input into optical models for the p-i-n solar cell structure. In this way, we demonstrate the beneficial effects of SnO2/p/i interface microroughness as an anti-reflector and the detrimental effects of the ZnO/Ag interlayer as a parasitic absorber.

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