Photo—Conductive Amorphous Silicon Carbide Prepared by Intermediate Species SiF2 and Cf4 Mixture

1985 ◽  
Vol 49 ◽  
Author(s):  
Hideki Matsumura ◽  
Takashi Uesugi ◽  
Hisanori Ihara
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Optical Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Gas Mixture ◽  
Intermediate Species ◽  
Amorphous Silicon Carbide ◽  
New Type ◽  
Conductive Properties ◽  
Hydrogenated Amorphous

AbstractA new type of hydro—fluorinated amorphous silicon—carbide (a-SiC:F:H) is produced by the glow discharge decomposition of gas mixture of CF4, H2 and intermediate species SiF2. The electrical, optical and structural properties of this a—SiC:F:H are studied and the results are compared with the similar results for a—SiC:F:H produced from gas mixture of CH4, H2 and SiF2 and also for hydrogenated amorphous silicon carbide (a—SiC:H) produced from CH4 and SiH4 gas mixture. It is found that the optical band gap can be increased without degradation of photo—conductive properties only when amorphous silicon carbide is produced from CF4, H2 and SiF2 gas mixture.

FULL-COLOR PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC SOURCE

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1057-1061 ◽  
Author(s):  
JUN XU ◽  
TIANFU MA ◽  
XIAOHUI HUANG ◽  
LI WANG ◽  
WEI LI ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous ◽  
Electro Luminescence ◽  
Organic Source

A series of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films (0 < x ≤ 1) were grown by using an organic source, xylene (C8H10), instead of methane (CH4) in a conventional plasma enhanced chemical vapor deposition system. The optical band gap of these samples was altered over a wide range by changing the gas ratio of C8H10 to SiH4, the maximum value can be reached as high as 3.6eV. Photoluminescence (PL) measurements were carried out at room temperature by using a Xe lamp as an excitation light. It was found that the PL peak is blue shifted with increasing optical band gap. The xylene-based a-SiC:H electro-luminescence (EL) device structure was also fabricated and room temperature EL behavior was investigated. It was found that the EL peak depended on the band gap of a-C:H films and a stable emission can be obtained by using the suitable structure parameters.

Sign in / Sign up

Export Citation Format

Share Document