Degradation and Recovery of Si Diodes by 20-Mev Protons And 220-Mev Carbon Particles

1997 ◽  
Vol 487 ◽  
Author(s):  
T. Hakata ◽  
H. Ohyama ◽  
E. Simoen ◽  
C. Claeys ◽  
H. Sunaga ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Reverse Current ◽  
Nuclear Collision ◽  
Electrical Performance ◽  
Fast Neutrons ◽  
Si Substrate ◽  
Recombination Lifetime ◽  
Carbon Particles ◽  
The Difference ◽  
Mev Protons

AbstractResults are presented of a study on the degradation of the electrical performance of Fe contaminated n+p Si diodes, subjected to a 220-MeV carbon irradiation. The reverse current of the diodes increases after irradiation, while the capacitance and hence the doping concentration decreases. The areal and peripheral components of the leakage current are extracted from diodes with different area to perimeter ratios. Both the generation and the recombination lifetime calculated from I/V and C/V characteristics also decrease. The deep levels in the Si substrate induced by the irradiation are mainly responsible for the degradation of the diode performance. The radiation damage is also studied for 1 -MeV electrons and 1 -MeV fast neutrons. The performance degradation for carbon irradiation is three orders of magnitude larger than that for electron irradiation. The differences in the radiation damage are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL), which is attributed to the difference of mass and the possibility of nuclear collision with target Si atoms

Impact of The ge Content on The Radiation Hardness of Hetero-Junction Diodes in Sige Strained Layers

1998 ◽  
Vol 533 ◽  
Author(s):  
H. Ohyama ◽  
E. Simoen ◽  
C. Claeys ◽  
Y. Takami ◽  
K. Hayama ◽  
...  
Keyword(s):  
Reverse Current ◽  
Depletion Region ◽  
Electrical Performance ◽  
Strained Si ◽  
Current Increase ◽  
Strained Layers ◽  
Carbon Particles ◽  
Rate Of Increase ◽  
Order Of Magnitude ◽  
The Difference

AbstractThe degradation of the electrical performance of strained Si1-xGex epitaxial diodes by 220-MeV carbon particles is reported and compared with the effect of 20-MeV alpha rays and 20-MeV protons. The macroscopic damage is studied in a broad fluence range and for different Ge contents, ranging from 8 to 16 %. It is shown that the radiation damage of carbon irradiated diodes is about one order of magnitude larger than that for alpha ray irradiation, which can be explained by considering the difference of the nonionizing energy loss (NIEL). It is observed that the reverse current at a fixed bias increases with increasing fluence, while the rate of increase decreases with increasing fluence and/or Ge content. The fact that a close to square root dependence exists between the boron deactivation in the diode depletion region, derived from capacitance-voltage measurements and the reverse current increase suggests that the device degradation is dominated by radiation induced deep levels associated with interstitial boron complexes.

Degradation and their Recovery Behavior of Irradiated GaAlAs LEDs

2007 ◽  
Vol 131-133 ◽  
pp. 119-124
Author(s):  
H. Ohyama ◽  
K. Takakura ◽  
T. Nagano ◽  
M. Hanada ◽  
S. Kuboyama ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Reverse Current ◽  
Nuclear Collision ◽  
Device Performance ◽  
Fluence Rate ◽  
Light Emitting ◽  
Recovery Behavior ◽  
Dx Center ◽  
The Difference ◽  
Mev Protons

The degradation and recovery behavior of device performance on GaAlAs LEDs (Light emitting diodes) irradiated by 2-MeV electrons and 70-MeV protons are investigated. The reverse current increases after irradiation, while the capacitance decreases. The device performance degradation is proportional with fluence. For electron irradiation, fluence rate is also effective for degradation. Low fluence rate shows more large degradation compared to high fluence rate resulting from heat impact in bulk. DLTS measurement reveals the DX center in epitaxial substrate, and this spectrum increases with fluence. The radiation damage of proton is larger than that of electron irradiation, which is caused by the difference of mass and possibility of nuclear collision for the formation of lattice defects. After irradiation, the device performance recovers by thermal annealing.

Radiation Damage in Si Avalanche Photodiodes by 1-Mev Fast Neutrons and 220-Mev Carbon Particles

1997 ◽  
Vol 487 ◽  
Author(s):  
H. Ohyama ◽  
T. Hakata ◽  
E. Simoen ◽  
C. Claeys ◽  
Y. Takami ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Dark Current ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Avalanche Photodiodes ◽  
Fast Neutrons ◽  
Device Performance ◽  
Carbon Particles ◽  
Transient Spectroscopy ◽  
Photo Current

AbstractResults are presented of a study on the degradation of the electrical and optical performance of n+p Si avalanche photodiodes, subjected to 1-MeV fast neutrons and to a 220-MeV carbon irradiation. The dark current increases after irradiation, while the photo current decreases. Two dominant hole capture levels, which are responsible for the degradation of performance, are after irradiation observed by DLTS (Deep Level Transient Spectroscopy). The degradation caused by neutron irradiation is smaller than that for carbon irradiation. The differences in the radiation damage are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

Radiation damage of BGO crystals due to low energy γ rays, high energy protons and fast neutrons

1983 ◽  
Vol 206 (1-2) ◽  
pp. 107-117 ◽  
Author(s):  
Masaaki Kobayashi ◽  
Kenjiro Kondo ◽  
Hiromi Hirabayashi ◽  
Shin-ichi Kurokawa ◽  
Mitsuhiko Taino ◽  
...  
Keyword(s):  
Radiation Damage ◽  
High Energy ◽  
Low Energy ◽  
Fast Neutrons ◽  
Γ Rays

RADIATION DAMAGE OF PAPER SAMPLES IN IN-AIR PIXE ANALYSIS

1999 ◽  
Vol 09 (01n02) ◽  
pp. 47-50 ◽  
Author(s):  
S. Matsuyama ◽  
H. Endo ◽  
K. Ishii ◽  
H. Yamazaki ◽  
Y. Tokai ◽  
...  
Keyword(s):  
Radiation Dose ◽  
Radiation Damage ◽  
Beam Irradiation ◽  
Pixe Analysis ◽  
Japanese Paper ◽  
Mev Protons

Degradation of paper caused by beam irradiation was investigated from a viewpoint of discoloration in PIXE analysis and its application to the paper samples of archaeology. Two types of paper (Japanese paper and fine quality paper) were tested in in-air PIXE analysis with 3 MeV protons. The degree of discoloration was quantitatively measured by the use of a calorimeter. The degree of discoloration was different for each tested paper and corresponded to the radiation dose of ions. It is resulted that even the in-air PIXE analysis should be carefully applied to archaeological treasures. Because discoloration of all tested paper decreased gradually at first but then increased after a few weeks. However, this phenomenon can be used to develop a technique of funny coloration.

Epoxy Cure Monitoring With An Interdigitated Gate Electrode Field Effect Transistor (IGEFET)

1997 ◽  
Vol 503 ◽  
Author(s):  
E. S. Kolesar ◽  
J. M. Wiseman
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Pulse Signal ◽  
Oxide Semiconductor ◽  
Electrical Performance ◽  
Gate Electrode ◽  
Electrode Structure ◽  
Difference Spectra ◽  
Effect Transistor ◽  
The Difference

ABSTRACTAn interdigitated gate electrode field-effect transistor (IGEFET) was designed, fabricated and used to monitor the cure of a common epoxy. The IGEFET sensor consists of an interdigitated gate electrode structure which is coupled to the gate contact of a conventional metal-oxide-semiconductor field-effect transistor (MOSFET). The epoxy was deposited on the interdigitated gate electrode, and the IGEFET's electrical performance was observed as the epoxy cured. The cross-linking chemical reaction during epoxy cure caused electrical impedance changes that were quantified when the IGEFET was operated with a periodic voltage pulse signal. Charge transferred through the chemically-active epoxy is manifested as a temporally-dependent potential applied to the MOSFET's gate contact. By operating the MOSFET as a linear amplifier, a potential corresponding to the temporally-dependent gate voltage was directly measured at the amplifier's output. The Fourier transform of the IGEFET's time-domain response at specific time increments was computed. The resulting epoxy cure spectra were compared to a reproducible baseline spectrum, and an ensemble of difference spectra were computed to reveal the epoxy's chemical state at specific instances of time. The difference spectra features yield valuable information concerning the state of the epoxy's cure.

Radiation damage and dose rate linearity response of a p-Si detector in 70 MeV protons

1983 ◽  
Vol 217 (3) ◽  
pp. 501-505 ◽  
Author(s):  
Göran Rikner ◽  
Erik Grusell ◽  
Valerij Kostjuchenko ◽  
Victor Lukjashin ◽  
Michail Lomanov
Keyword(s):  
Dose Rate ◽  
Radiation Damage ◽  
Mev Protons

Radiation damage in InGaAs photodiodes by 1MeV fast neutrons

1998 ◽  
Vol 53 (6) ◽  
pp. 597-602 ◽  
Author(s):  
H. Ohyama ◽  
J. Vanhellemont ◽  
Y. Takami ◽  
T. Kudou ◽  
H. Sunaga
Keyword(s):  
Radiation Damage ◽  
Fast Neutrons
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