Progress on 850 nm Flip Chip Bondable VCSEL for Optical Interconnects

1997 ◽  
Vol 486 ◽  
Author(s):  
J. E. Cunningham ◽  
W. Y. Jan ◽  
K. W. Goossen ◽  
A. Krishnamoorthy ◽  
J. A. Walker ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
Flip Chip ◽  
Light Emission

AbstractWe report here efforts to advance 850 nm VCSELs designed specifically for integration to Si- CMOS. Our VCSEL design is based on an oxidized current aperture and oxidized top mirror with the intent that the device operate as a bottom emitter after integration. Our design also employs intercavity contacts and the first non-alloyed buried contact have been realized. The devices produce resonantly enhanced light emission with record output of 70 μW/st.rad.

VLSI Design for Functional Failure Analysis in the < 90 nm and Flip-Chip Era

2003 ◽  
Author(s):  
Yoav Weizman ◽  
Ezra Baruch
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Light Emission ◽  
Vlsi Design ◽  
Optical Resolution ◽  
Critical Issue ◽  
Acquisition Time ◽  
Resolution Limit ◽  
Design Rules ◽  
The Impact

Abstract In recent years, two new techniques were introduced for flip chip debug; the Laser Voltage Probing (LVP) technique and Time Resolved Light Emission Microscopy (TRLEM). Both techniques utilize the silicon’s relative transparency to wavelengths longer than the band gap. This inherent wavelength limitation, together with the shrinking dimensions of modern CMOS devices, limit the capabilities of these tools. It is known that the optical resolution limits of the LVP and TRLEM techniques are bounded by the diffraction limit which is ~1um for both tools using standard optics. This limitation was reduced with the addition of immersion lens optics. Nevertheless, even with this improvement, shrinking transistor geometry is leading to increased acquisition time, and the overlapping effect between adjacent nodes remains a critical issue. The resolution limit is an order of magnitude above the device feature densities in the &lt; 90nm era. The scaling down of transistor geometry is leading to the inevitable consequence where more than 50% of the transistors in 90nm process have widths smaller than 0.4um. The acquisition time of such nodes becomes unreasonably long. In order to examine nodes in a dense logic cuicuit, cross talk and convolution effects between neighboring signals also need to be considered. In this paper we will demonstrate the impact that these effects may have on modern design. In order to maintain the debug capability, with the currently available analytical tools for future technologies, conceptual modification of the FA process is required. This process should start on the IC design board where the VLSI designer should be familiar with FA constraints, and thus apply features that will enable enhanced FA capabilities to the circuit in hand during the electrical design or during the physical design stages. The necessity for reliable failure analysis in real-time should dictate that the designer of advanced VLSI blocks incorporates failure analysis constraints among other design rules. The purpose of this research is to supply the scientific basis for the optimal incorporation of design rules for optical probing in the &lt; 90nm gate era. Circuit designers are usually familiar with the nodes in the design which are critical for debug, and the type of measurement (logic or DC level) they require. The designer should enable the measurement of these signals by applying certain circuit and physical constraints. The implementation of these constraints may be done at the cell level, the block level or during the integration. We will discuss the solutions, which should be considered in order to mitigate tool limitations, and also to enable their use for next generation processes.

1K channel optical interconnects of CMOS-PQR flip chip

2004 ◽  
Author(s):  
O'Dae Kwon ◽  
Kwonsub Lim ◽  
Jungyoun Kim ◽  
Sangkyeom Kim ◽  
Moojin Kim ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
Flip Chip

scholarly journals III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template

2019 ◽  
Vol 8 (1) ◽  
Author(s):  
Yingtao Hu ◽  
Di Liang ◽  
Kunal Mukherjee ◽  
Youli Li ◽  
Chong Zhang ◽  
...  
Keyword(s):  
Dislocation Density ◽  
High Performance ◽  
Flip Chip ◽  
Continuous Wave ◽  
Integration Method ◽  
Light Emission ◽  
Threshold Current ◽  
Photonic Integration ◽  
Practical Applications ◽  
Low Dislocation Density

Abstract Silicon photonics is becoming a mainstream data-transmission solution for next-generation data centers, high-performance computers, and many emerging applications. The inefficiency of light emission in silicon still requires the integration of a III/V laser chip or optical gain materials onto a silicon substrate. A number of integration approaches, including flip-chip bonding, molecule or polymer wafer bonding, and monolithic III/V epitaxy, have been extensively explored in the past decade. Here, we demonstrate a novel photonic integration method of epitaxial regrowth of III/V on a III/V-on-SOI bonding template to realize heterogeneous lasers on silicon. This method decouples the correlated root causes, i.e., lattice, thermal, and domain mismatches, which are all responsible for a large number of detrimental dislocations in the heteroepitaxy process. The grown multi-quantum well vertical p–i–n diode laser structure shows a significantly low dislocation density of 9.5 × 104 cm−2, two orders of magnitude lower than the state-of-the-art conventional monolithic growth on Si. This low dislocation density would eliminate defect-induced laser lifetime concerns for practical applications. The fabricated lasers show room-temperature pulsed and continuous-wave lasing at 1.31 μm, with a minimal threshold current density of 813 A/cm2. This generic concept can be applied to other material systems to provide higher integration density, more functionalities and lower total cost for photonics as well as microelectronics, MEMS, and many other applications.

Uniformity of Light Emission in Micro-area on Mesa of High-power Flip-chip LED Devices with Ceramic Packaging

2021 ◽  
Vol 42 (09) ◽  
pp. 1436-1445
Author(s):  
Xiao-zhen LI ◽  
◽  
Chuan-bing XIONG ◽  
Ying-wen TANG ◽  
Dong-hui HAO
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Light Emission

Polymer flip-chip integrated AlGaAsSb/AlGaSb p-i-n photodetectors for 1550-nm high-speed optical interconnects

2004 ◽  
Author(s):  
Saurabh K. Lohokare ◽  
Christopher A. Schuetz ◽  
Zhaolin Lu ◽  
Dennis W. Prather ◽  
Oleg V. Sulima ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
High Speed ◽  
Flip Chip

Low-crosstalk 10-Gb/s flip-chip array module for parallel optical interconnects

2005 ◽  
Vol 17 (7) ◽  
pp. 1516-1518 ◽  
Author(s):  
Sang Hyun Park ◽  
Sung Min Park ◽  
Hyo-Hoon Park ◽  
Chul Soon Park
Keyword(s):  
Optical Interconnects ◽  
Flip Chip ◽  
Parallel Optical Interconnects

scholarly journals Improving the External Quantum Efficiency of High Power GaN Based Flip-Chip LEDs using Ag/SiO2/DBR/SiO2 Composite ReflectiveStructure

2021 ◽  
Author(s):  
Liang Xu ◽  
Jinglin Zhan ◽  
Huiqing Sun ◽  
Zhizhong Chen ◽  
Zhiyou Guo
Keyword(s):  
Quantum Efficiency ◽  
High Power ◽  
External Quantum Efficiency ◽  
Flip Chip ◽  
Light Emission ◽  
Light Output ◽  
Vertical Direction ◽  
Bragg Reflector ◽  
Light Extraction Efficiency ◽  
Distributed Bragg Reflector

Abstract Improve the light extraction efficiency and light output in the vertical direction of LEDs for high-power applications, flip-chip LEDs (FCLEDs) with an Ag/SiO2/distributed Bragg reflector/SiO2 composite reflection structure (CRS) were fabricated. The enhanced opto-electrical properties were thoroughly investigated. Compared with the normal Ag-based FCLEDs, the light output power of the CRS-FCLEDs is increased by 6.3% at an operational current of 1500 mA, with the corresponding external quantum efficiency improved by 6.0%. Further investigation proved that the CRS structure exhibited higher reflectance compared with the commonly used Ag-mirror reflective structure, which originates from the increased reflective area in the sidewall and partial area of the n-GaN contact holes. Moreover, the light emission intensity distributions and far-field angular light emission measurements show that the CRS-FCLED has a strengthened light output in the vertical direction, which shows great potential for applications in high-power fields, such as headlamps for automobiles.

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