Integrated Optic Devices in Silicon and Silicon-on-Insulator Materials

1997 ◽  
Vol 486 ◽  
Author(s):  
B. Schüppert ◽  
K. Petermann
Keyword(s):  
Integrated Optics ◽  
Silicon On Insulator ◽  
Material System ◽  
Active Components ◽  
Silicon Material ◽  
Integrated Optic Devices

AbstractThis paper reviews various integrated optics techniques and devices in the silicon material system. Different approaches for waveguides, passive and active components in silicon and the performance of such devices will be discussed.

Deep-Level Dominated Current-Voltage Characteristics of Novel Semiconductor Heterostructures

1989 ◽  
Vol 163 ◽  
Author(s):  
K. Das
Keyword(s):  
Molecular Beam ◽  
Deep Level ◽  
Silicon On Insulator ◽  
Conduction Band Edge ◽  
Material System ◽  
Discrete State ◽  
Sapphire Substrates ◽  
Current Voltage ◽  
Gaas Films ◽  
Current Voltage Characteristics

AbstractCurrent-voltage characteristics of Au contacts formed on buried implanted oxide silicon-on-insulator structures and molecular beam epitaxially grown GaAs on (1012) sapphire and silicon-on-sapphire substrates indicate that the dominant transport mechanism in these films is space-charge-limited current conduction in the presence of deep-level states. The deep-level parameters, determined using an analysis of the current-voltage characteristics, appear to be sensitive to the nature of crystallographic defects present in the grown layers. Conduction in the GaAs film on SOS was dominated by one discrete state located ~ 0.28eV below the conduction band-edge, which is close to the El center uniquely observed in the molecular beam epitaxially grown GaAs-on-Si. Discrete levels are also observed in annealed buried implanted oxide silicon-on-insulator films. In contrast, the GaAs films deposited directly on (1012) sapphire substrates and rapid-thermally annealed high-dose As implanted buried oxide SOI films appear to have a continuous distribution of states. The distributed states in GaAs films deposited directly on sapphire probably arise from the electrical activity of the double-position boundaries present in this material system.

Active Silicon Integrated Optical Circuits

1997 ◽  
Vol 486 ◽  
Author(s):  
Tim D. Bestwick
Keyword(s):  
Integrated Optics ◽  
Single Mode ◽  
Major Product ◽  
Silicon On Insulator ◽  
Integrated Optics Devices ◽  
Silicon Waveguides ◽  
Integrated Optical ◽  
Hybrid Devices ◽  
Optical Circuits ◽  
Integrated Optical Circuits

AbstractActive Silicon integrated Optical Circuits (ASOC™) is a technology based on single-mode rib waveguides formed on silicon-on-insulator that is being used to manufacture commercial integrated optics components. Silicon waveguides have excellent properties for many applications in the 1.3 and 1.55 micron telecommunications bands including relatively low loss. An important aspect of ASOC™ technology is the development of a set of waveguide-based elements that can be assembled into practical integrated optics devices. The fundamental waveguide elements include bends, couplers and fiber-waveguide interfaces, and additional elements include doped structures and waveguide gratings. Discrete lasers and photodetectors are also incorporated into ASOC™ technology to form hybrid devices. The technology is being used to manufacture devices for applications in telecomunications and optical sensing, the first major product being a two-wavelength single-fiber bi-directional optical transceiver.

Passive and Active Nanophotonics

2012 ◽  
Vol 82 ◽  
pp. 9-18
Author(s):  
Yeshaiahu Fainman ◽  
D. Tan ◽  
S. Zamek ◽  
O. Bondarenko ◽  
A. Simic ◽  
...  
Keyword(s):  
Short Pulse ◽  
Silicon On Insulator ◽  
Three Dimensions ◽  
Photonic Integration ◽  
Active Components ◽  
Passive Components ◽  
Active Devices ◽  
Pulse Compressor ◽  
Monolithically Integrated

Dense photonic integration requires miniaturization of materials, devices and subsystems, including passive components (e.g., engineered composite metamaterials, filters, etc.) and active components (e.g., lasers, modulators, detectors). This paper discusses passive and active devices that recently have been demonstrated in our laboratory, including monolithically integrated short pulse compressor utilized with silicon on insulator material platform and design, fabrication and testing of nanolasers constructed using metal-dielectric-semiconductor resonators confined in all three dimensions.

Research of High Performance Polarization-Independent Grating Beam Splitter

2013 ◽  
Vol 310 ◽  
pp. 481-485
Author(s):  
Ke Zhao ◽  
Xiao Min Lei ◽  
Guo Feng Xie ◽  
Wen Hua Xiong
Keyword(s):  
High Performance ◽  
Beam Splitter ◽  
Transverse Electric ◽  
Transverse Magnetic ◽  
Silicon On Insulator ◽  
Material System ◽  
Design And Optimization ◽  
Rigorous Coupled Wave Analysis ◽  
Rigorous Coupled Wave ◽  
Polarization Independent

Based on a silicon-on-insulator (Silicon-on-insulator, SOI) material system design and optimization of a high performance, the polarization independent of 1 × 3 subwavelength grating stars beam splitter. By a rigorous coupled-wave analysis method showed that, in the 1550nm wavelength range, at vertical incidence, the device on the transverse electric field (transverse electric, TE) ,the 0 and ± 1 order transmittance is 31%, 32%, 32%,respectively; cross the magnetic field (transverse magnetic, TM), the 0 and ± 1 transmittance is 33%, 32%, 32%, respectively.

scholarly journals Broadband Terahertz Photonic Integrated Circuit with Integrated Active Photonic Devices

Photonics ◽  
2021 ◽  
Vol 8 (11) ◽  
pp. 492
Author(s):  
Amlan kusum Mukherjee ◽  
Mingjun Xiang ◽  
Sascha Preu
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Near Field ◽  
Single Mode ◽  
Silicon On Insulator ◽  
High Resistivity ◽  
Active Components ◽  
Photonic Integrated Circuit ◽  
Active Devices ◽  
Frequency Coverage

Present-day photonic terahertz (100 GHz–10 THz) systems offer dynamic ranges beyond 100 dB and frequency coverage beyond 4 THz. They yet predominantly employ free-space Terahertz propagation, lacking integration depth and miniaturisation capabilities without sacrificing their extreme frequency coverage. In this work, we present a high resistivity silicon-on-insulator-based multimodal waveguide topology including active components (e.g., THz receivers) as well as passive components (couplers/splitters, bends, resonators) investigated over a frequency range of 0.5–1.6 THz. The waveguides have a single mode bandwidth between 0.5–0.75 THz; however, above 1 THz, these waveguides can be operated in the overmoded regime offering lower loss than commonly implemented hollow metal waveguides, operated in the fundamental mode. Supported by quartz and polyethylene substrates, the platform for Terahertz photonic integrated circuits (Tera-PICs) is mechanically stable and easily integrable. Additionally, we demonstrate several key components for Tera-PICs: low loss bends with radii ∼2 mm, a Vivaldi antenna-based efficient near-field coupling to active devices, a 3-dB splitter and a filter based on a whispering gallery mode resonator.

Materials Requirements for Electro-Optic Polymers (for electronic systems applications)

1992 ◽  
Vol 247 ◽  
Author(s):  
Rick Lytel ◽  
George F. Lipscomb
Keyword(s):  
Thermal Stability ◽  
Integrated Optics ◽  
Polymer Material ◽  
Basic Research ◽  
Polymer Materials ◽  
Core Material ◽  
Electronic Systems ◽  
Material System ◽  
Active Core ◽  
Electro Optic

ABSTRACTThe field of electro-optic (EO) polymer materials for integrated optics has been developing rapidly during the past several years. Recent advances include the formulation of poled crosslinked epoxies and guest-host polyimides exhibiting thermal stability at temperatures significantly higher than that previously achieved with thermoplastic acrylate chemistry. These developments are an essential first step toward achieving practical materials exhibiting stability to manufacture, assembly, and end-use in modern electronic systems applications.Despite these developments, there is still much basic research to be performed to achieve a practical EO polymer material system. A polymer material system for integrated optics consists of a set of three compatible materials: cladding polymers, passive core polymers, and active core polymers. The three materials should ideally be derived from the same base polymer so that the layers of the entire waveguide structure have nearly identical thermal, mechanical, chemical, electrical, and optical properties. In an ideal syst', the active core material would consist of passive materials highly loaded with aligned nonlinear optical moieties exhibiting large hyperpolarizabilities and suitable size and shape for thermal stability.This paper provides a detailed review of the material requirements for EO polymer waveguide devices in electronic systems and points to new areas of research required for practical systems.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

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