Strong Blue and Violet Light Emission from Silicon- and Germanium-Implanted Silicon-Dioxide Films

1997 ◽  
Vol 486 ◽  
Author(s):  
L. Rebohle ◽  
I. E. Tyschenko ◽  
J. Von Borany ◽  
B. Schmidt ◽  
R. Grötzschel ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Dioxide ◽  
Light Emission ◽  
Si Substrate ◽  
Oxide Layers ◽  
Naked Eye ◽  
Annealing Temperatures ◽  
Violet Light ◽  
Transmission Electron ◽  
Silicon And Germanium

AbstractPhotoluminescence (PL) and electroluminescence (EL) from Si+- and Ge+-implanted SiO2 layers thermally-grown on a Si substrate were studied. The PL spectra were recorded after annealing at temperatures in the range of 400° to 1200°C. Single-peak PL at 460 nm and doublepeak PL at 420 and 385 nm due to Si+-implanted and Ge+-implanted oxide layers, respectively, reached a maximum following heat treatment at 500°C for 30 min. The EL spectra from the Gerich oxides after annealing at 1000°C correlated very well with the PL signal, and showed a linear dependence on the injection current. The EL emission was strong enough to be readily seen with the naked eye, and the EL efficiency was estimated to be about 5×10−4. High-resolution transmission electron microscopy (HRTEM) analysis showed that the formation of nanocrystals in the implanted oxide layers occurred at annealing temperatures in excess of 800°C. The observed light emission is attributable to the presence of-≡Si-Si≡, ≡Si-Ge≡ and ≡Ge-Ge≡ centres in SiO2.

Fabrication of Multi-Level Buried Oxide Layers by Oxygen-Ion-Implantation into Si/Ge multilayers

1996 ◽  
Vol 438 ◽  
Author(s):  
Toshio Ogino ◽  
Yoshihiro Kobayashi ◽  
Kuniyil Prabhakaran ◽  
Koji sumitomo
Keyword(s):  
Electron Microscopy ◽  
Silicon Dioxide ◽  
Multilayered Structures ◽  
Oxide Layers ◽  
Oxygen Ions ◽  
Novel Technique ◽  
Oxygen Ion ◽  
Transmission Electron ◽  
Multi Level ◽  
Oxygen Ion Implantation

AbstractWe propose a novel technique based on preferential oxidation of Si in the Si/Ge system. Oxygen ions were implanted at 30 keV into Si/Ge multilayers while the substrate temperature was kept below 100°C. Significant oxygen concentration was then observed at the Si/Ge interfaces and at a thin Si layer embedded into the Ge layer. When the samples were then annealed above 400°c, the bonding state of the Si oxide approached that of SiO2. During this process, Ge atoms were expelled from the oxide layers. Transmission electron microscopy confirmed that silicon dioxide layers were formed. This new technique can be used to form semiconductor/insulator multilayered structures from Si/Ge multilayers.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

A crystallographic analysis of the CoSi/Si(111) interface using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 574-575
Author(s):  
A.C. Daykin ◽  
C.J. Kiely ◽  
R.C. Pond ◽  
J.L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Theoretical Method ◽  
Crystallographic Analysis ◽  
Si Substrate ◽  
Transmission Electron ◽  
Theoretical Predictions

When CoSi2 is grown onto a Si(111) surface it can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate and B-type is rotated by 180° degrees about the [111] surface normal.One method of producing epitaxial CoSi2 is to deposit Co at room temperature and anneal to 650°C.If greater than 10Å of Co is deposited then both A and B-type CoSi2 form via a number of intermediate silicides .The literature suggests that the co-existence of A and B-type CoSi2 is in some way linked to these intermediate silicides analogous to the NiSi2/Si(111) system. The phase which forms prior to complete CoSi2 formation is CoSi. This paper is a crystallographic analysis of the CoSi2/Si(l11) bicrystal using a theoretical method developed by Pond. Transmission electron microscopy (TEM) has been used to verify the theoretical predictions and to characterise the defect structure at the interface.

Post Oxidation Anneal and Re-Oxidation Effects in 5 nm SiO2 Films

1986 ◽  
Vol 76 ◽  
Author(s):  
L. Dori ◽  
M. Arienzo ◽  
Y. C. Sun ◽  
T. N. Nguyen ◽  
J. Wetzel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Oxygen Vacancies ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Oxide Charge ◽  
Transmission Electron ◽  
Redistribution Of Hydrogen ◽  
Transmission Electron Microscopy Cross

ABSTRACTUltrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.

Void Morphology In NiAl

2000 ◽  
Vol 646 ◽  
Author(s):  
M. Zakaria ◽  
P.R. Munroe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Energy ◽  
Annealing Temperature ◽  
Void Formation ◽  
Dislocation Climb ◽  
Annealing Temperatures ◽  
Relative Incidence ◽  
Transmission Electron ◽  
Void Shape

ABSTRACTVoid formation in stoichiometric NiAl was studied through controlled heat treatments and transmission electron microscopy. Voids formed at temperatures as low as 400°C, but dissolved during annealing at 900°C. Both cuboidal and rhombic dodecahedral voids were observed, often at the same annealing temperature. At higher annealing temperatures (>800°C) extensive dislocation climb was noted. The relative incidence of void formation and dislocation climb can be related to the mobility of vacancies at each annealing temperature. Further, differences in void shape can be described in terms of their relative surface energy and mode of nucleation.

Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Near Infrared Light ◽  
Transmission Electron ◽  
Doped Zno ◽  
Er Doped

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Defects in Germanium Nanocrystals Produced by Ion Implantation

2013 ◽  
Vol 709 ◽  
pp. 148-152
Author(s):  
Yu Juan Zhang ◽  
Lei Shang
Keyword(s):  
Electron Microscopy ◽  
Light Emission ◽  
Stacking Faults ◽  
Implantation Dose ◽  
Defect Structures ◽  
High Temperature Annealing ◽  
Planar Defects ◽  
Transmission Electron ◽  
Microstructural Defects ◽  
Germanium Nanocrystals

Germanium nanocrystals (Ge-nc) were produced by the implantation of Ge+ into a SiO2 film deposited on (100) Si, followed by a high-temperature annealing. High-resolution transmission electron microscopy (HRTEM) has been used to investigate the defect structures inside the Ge-nc produced by different implantation doses (1×1016, 2×1016, 4×1016 and 8×1016 cm-2). It has been found that the planar defects such as nanotwins and stacking faults (SFs) are dominant in Ge-nc (60%) for the samples with implantation doses higher than 2×1016 cm-2, while for the sample with an implantation dose lower than 1×1016 cm-2, fewer planar defects are observed in the Ge-nc (20%). The percentages of nanotwins in the planar defects are 87%, 77%, 67% and 60% in four samples, respectively. The twinning structures include single twins, double twins and multiple twins. We also found that there are only SFs in some nanocrystals, and in others the SFs coexist with twins. These microstructural defects are expected to play an important role in the light emission from the Ge-nc.

CoSi2 Precipitate Coarsening During Formation of Buried Epitaxial Cosi2 Layers By Ion Beam Synthesis

1990 ◽  
Vol 201 ◽  
Author(s):  
R. Jebasinski ◽  
S. Mantl ◽  
K. Radermacher ◽  
P. Fichtner ◽  
W. Jăger ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Activation Energy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Microstructural Evolution ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Precipitate Coarsening ◽  
Annealing Temperatures ◽  
Transmission Electron

AbstractThe coarsening of CoSi2 precipitates and the microstructural evolution of (111) Si implanted with 200 keV Co+ ions at 350°C and fluences of 1×1016cm−2 and 6×1016cm−2 were investigated as a function of depth, annealing temperature and annealing time using Rutherford Backscattering Spectroscopy (RBS) and Transmission Electron Microscopy (TEM). After annealing cross-section TEM micrographs show a layered array of platelet-shaped precipitates with preferred facets on {111} planes. The fraction of Co-atoms, that were redistributed during the different annealing temperatures and times, has been used to determine an activation energy for the precipitate coarsening. By applying the Meechan-Brinkman and the change-of-slope methods, we obtained activation energies in the range of 3.2 – 3.6 eV.

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