Electroluminescence Studies Of Si Bulk Materials Using Al-Si Schottky Diodes

1997 ◽  
Vol 486 ◽  
Author(s):  
Chun-Xia Du ◽  
Wei-Xin Ni ◽  
Kenneth B. Joelsson ◽  
Guang-Di Shen ◽  
Göran V. Hansson
Keyword(s):  
Radiative Decay ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Schottky Contacts ◽  
Injection Current ◽  
Bulk Materials ◽  
Temperature Dependent ◽  
Intense Light

AbstractElectroluminescence (EL) of Si bulk materials has been studied using lowly doped substrate with two Al-Si Schottky contacts. By applying a forward bias on the structure, the intense light emissions at 1.094 eV due to the TO-phonon assisted recombination was obtained at 40 K while other TA- and 2TO-associated transitions were also observed. The Si-TO EL peak persists up to RT with a radiative decay of ∼ 5 μs. EL emission mechanisms of these Si Schottky diodes are discussed based on temperature dependent- and injection current-dependent EL measurements.

A New Approach to Temperature Dependent Ideality Factors in Schottky Contacts

1992 ◽  
Vol 260 ◽  
Author(s):  
Zs. J. Horváth
Keyword(s):  
Experimental Data ◽  
Low Temperatures ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Schottky Contacts ◽  
Temperature Dependent ◽  
Model Calculations ◽  
New Approach ◽  
Barrier Heights ◽  
Thermionic Field Emission

ABSTRACTSchottky diodes often exhibit anomalous current-vol tage characteristics at low temperatures (T) with T dependent ideality factors (IF) and apparent barrier heights (BH) evaluated for the thermionic emission. In this paper theoretical expressions are first presented for the T dependences of the IF and the apparent BH for the thermionic-field emission (TFE) including the bias dependence of BH. Model calculations are reported, which has been performed using these expressions, and their results are compared with the available experimental data. It is shown that the T dependence of the 1 Fs and apparent BHs often may be explained self consistently by the TFE with anomalously high characteristic energies Eoo.

scholarly journals Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
V. Rajagopal Reddy ◽  
B. Prasanna Lakshmi ◽  
R. Padma
Keyword(s):  
Barrier Height ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Interface State ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Current Voltage ◽  
State Densities ◽  
Optimum Annealing Temperature

The effect of annealing temperature on electrical characteristics of iridium (Ir) and iridium/gold (Ir/Au) Schottky contacts to n-type InGaN have been investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) techniques. It is observed that the barrier height of Ir/n-InGaN and Au/Ir/n-InGaN Schottky diodes increases after annealing at 300∘C for 1 min in N2 ambient compared to the as-deposited. However, the barrier heights are found to be decreased somewhat after annealing at 500∘C for the both Ir and Ir/Au Schottky contacts. From the above observations, it is clear that the optimum annealing temperature for both Ir and Ir/Au Schottky contacts is 300∘C. Moreover, the barrier height (ϕb), ideality factor (n) and series resistance (RS) are determined using Cheung’s and Norde methods. Besides, the energy distribution of interface state densities are determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. Based on the above results, it is clear that both Ir and Ir/Au Schottky contacts exhibit a kind of thermal stability during annealing.

Electrical Properties of Schottky Contacts of TiW on RTCVD Si1-x-yGexCy Films

1997 ◽  
Vol 470 ◽  
Author(s):  
Jian Mi ◽  
Yilu Zhang ◽  
Patricia Warren ◽  
Cary Y. Yang
Keyword(s):  
Electrical Properties ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Schottky Contacts ◽  
Crystal Defects ◽  
Recombination Centers ◽  
High Series

ABSTRACTHigh-quality epitaxial Si1-x-yGexCy layers were grown on Si by rapid thermal chemical vapor deposition. Schottky diodes of TiW/SiGeC were fabricated using conventional Si processes. I-V and C-V measurements were performed to assess effects of crystal defects in the alloy on the electrical properties. For defective SiGeC films due to non-substitutional carbon, high series resistance and additional tunneling current were measured under forward bias, as well as leakage current under reverse bias. A transport mechanism of deep generation/recombination centers formed by carbon complexes is proposed to explain the I-V characteristics.

RED LIGHT EMITTING SCHOTTKY DIODES ON p-TYPE GaN/AlN/Si(111) SUBSTRATE

2010 ◽  
Vol 24 (09) ◽  
pp. 1129-1135 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Thin Film ◽  
Ohmic Contacts ◽  
Light Emission ◽  
Hole Concentration ◽  
Schottky Diodes ◽  
Red Light ◽  
Forward Bias ◽  
Schottky Contacts ◽  
Electroluminescent Devices ◽  
Light Color

High quality GaN layers doped with Mg were grown on Si (111) substrates using high temperature AlN as buffer layer by radio-frequency molecular beam epitaxy. From the Hall measurements, fairly uniform high hole concentration as high as (4–5) × 1020 cm -3 throughout the GaN was achieved. The fabrication of the device is very simple. Nickel ohmic contacts and Schottky contacts using indium were fabricated on Mg -doped p-GaN films. The light emission has been obtained from these thin film electroluminescent devices. Thin film electroluminescent devices were operated under direct current bias. Schottky and ohmic contacts used as cathode and anode were employed in these investigations. Alternatively, two Schottky contacts could be probed as cathode and anode. Thin film electroluminescent devices were able to emit light. However, electrical and optical differences could be observed from the two different probing methods. The red light color could be observed when the potential between the electrodes was increased gradually under forward bias of 8 V at room temperature. Electrical properties of these thin film electroluminescent devices were characterized by current–voltage (I–V) system, the heights of barriers determined from the I–V measurements were found to be related to the electroluminescence.

Temperature-dependent characteristics of Pt Schottky contacts on n-type HgInTe

2008 ◽  
Vol 23 (10) ◽  
pp. 105005 ◽  
Author(s):  
X L Zhang ◽  
W G Sun ◽  
L Zhang ◽  
Z X Lu
Keyword(s):  
Schottky Contacts ◽  
Temperature Dependent

On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes

2006 ◽  
Vol 83 (3) ◽  
pp. 577-581 ◽  
Author(s):  
M.M. Bülbül ◽  
S. Zeyrek ◽  
Ş. Altındal ◽  
H. Yüzer
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Dependent Series

Temperature Sensors Based on AlN/4H-SiC Diodes

2021 ◽  
Vol 13 (7) ◽  
pp. 1318-1323
Author(s):  
Myeong-Cheol Shin ◽  
Dong-Hyeon Kim ◽  
Seong-Woo Jung ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Temperature Sensors ◽  
Electrical Characteristics ◽  
Voltage Range ◽  
Radio Frequency Sputtering ◽  
Sensing Applications ◽  
Current Voltage ◽  
Dc Bias

ABSTRACTThis study report on the formation of AlN/SiC heterostructure Schottky diodes for use of temperature sensing applications enhance the sensitivity. We analyzed the sensitivity of the AlN/SiC Schottky diode sensor depending on the annealing temperature. AlN/4H-SiC Schottky diodes were fabricated by depositing aluminum nitride (AlN) thin film on 4H/SiC by radio frequency sputtering. The forward bias electrical characteristics were determined under DC bias (in the voltage range of 0–1.5 V). The ideality factor, barrier height, and sensitivity were derived through current–voltage–temperature (I–V–T) measurements in the temperature range of 300–500 K. The sensitivity of the AlN/4H-SiC Schottky barrier diode ranged from 2.5–5.0 mV/K.

Analysis of Forward Surge Performance of SiC Schottky Diodes

2018 ◽  
Vol 924 ◽  
pp. 621-624 ◽  
Author(s):  
Rahul Radhakrishnan ◽  
Nathanael Cueva ◽  
Tony Witt ◽  
Richard L. Woodin
Keyword(s):  
Silicon Carbide ◽  
Failure Analysis ◽  
Ohmic Contact ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Device Failure ◽  
Electrical Failure ◽  
The Impact ◽  
Surge Current

Silicon Carbide JBS diodes are capable, in forward bias, of carrying surge current of magnitude significantly higher than their rated current, for short periods. In this work, we examine the mechanisms of device failure due to excess surge current by analyzing variation of failure current with device current and voltage ratings, as well as duration of current surge. Physical failure analysis is carried out to correlate to electrical failure signature. We also quantify the impact, on surge current capability, of the resistance of the anode ohmic contact to the p-shielding region.

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