Mbe Growth And Characterization Of Er/O And Er/F Doped Si Light Emitting Structures

1997 ◽  
Vol 486 ◽  
Author(s):  
W.-X. Ni ◽  
C.-X. Du ◽  
K. B Joelsson ◽  
G. V. Hansson ◽  
G. Pozina ◽  
...  
Keyword(s):  
Fold Increase ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Extended Defects ◽  
Hot Electron ◽  
Laser Applications ◽  
Light Emitting ◽  
Er Doping ◽  
Wide Range ◽  
Er Doped

AbstractBy using a low temperature growth process, Er doping in Si during MBE using Er2O3 or ErF3 as dopant sources has achieved a level of 5 × 1019 cm−3 without precipitation and generation of other extended defects. Luminescence properties of these Er-doped MBE Si structures have been extensively studied using both photon and hot electron impact excitation at a wide range of temperatures (2–300 K). It has been found that by incorporating C into Er/O doped layers, the room temperature EL emission with a FWHM value of 14 meV was ten times more intense than that with lower C doping. Post thermal annealing gave a strong effect on Er/F doped layers, leading to a 7-fold increase of the highest peak intensity while the peak line width reduced to 0.12 meV, which is very important for laser applications.

Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO2 Layers

2007 ◽  
Vol 131-133 ◽  
pp. 595-600
Author(s):  
S. Prucnal ◽  
L. Rebohle ◽  
Wolfgang Skorupa
Keyword(s):  
Rare Earth ◽  
Light Emitting Diode ◽  
Operating Time ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Hot Electron ◽  
Light Emitting ◽  
Hot Electron Injection ◽  
Quenching Process ◽  
Quenching Mechanisms

The temperature quenching mechanisms of the electroluminescence (EL) and the reactivation of the rare earth luminescent centres by the flash lamp annealing (FLA) made after hot electron injection into the SiO2 layer implanted by Tb and Gd was investigated. An increase of the temperature from room temperature up to 150oC reduces the gate voltage of about 3 V and increases the rate of the EL quenching process and the degradation of the Metal-Oxide-Silicon Light Emitting Diode (MOSLED) structure by a of factor of three. On the other hand, the post-injection FLA reactivates the RE centres switched off by electrons trapped around them during hot electron impact excitation, increasing the operating time of the MOSLEDs devices.

Impact Excitation And Auger Quenching Processes In Er Doped Light Emitting Si Devices

1997 ◽  
Vol 486 ◽  
Author(s):  
G. Franzo' ◽  
F. Priolo ◽  
S. Coffa
Keyword(s):  
High Efficiency ◽  
Depletion Region ◽  
Light Signal ◽  
Impact Excitation ◽  
Light Emitting ◽  
Free Carriers ◽  
Heavily Doped ◽  
Excitation Processes ◽  
Er Doped ◽  
Incorporation Method

AbstractA detailed investigation of the Auger non radiative de-excitation processes, which compete with the radiative emission of Er in Si, will be presented. This process, in which the energy released by the Er de-excitation is transferred to free carriers, is demonstrated to be extremely efficient and characterized by an Auger coefficient CA˜4.4×l0−13 cm3/s. This Auger process and an efficient incorporation method have been used to improve the performances of Er implanted light emitting diodes. It will be shown that by exciting Er within the depletion region of reverse biased p+-n+ Si diodes in the breakdown regime, it is possible to avoid Auger quenching and to achieve high efficiency. Moreover, at the switch off of the diode, when the depletion region shrinks, the excited Er ions become suddenly embedded within the neutral heavily doped region. In this region Auger de-excitation with free carriers sets in allowing to modulate the light signal at frequencies as high as a few MHz.

scholarly journals R-matrix electron-impact excitation data for the N-like iso-electronic sequence

2020 ◽  
Vol 643 ◽  
pp. A95
Author(s):  
Junjie Mao ◽  
N. R. Badnell ◽  
G. Del Zanna
Keyword(s):  
Electron Impact ◽  
Plasma Diagnostics ◽  
Spectral Lines ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Atomic Data ◽  
Astrophysical Plasma ◽  
Wide Range ◽  
The Impact ◽  
Effective Collision

Context. Spectral lines from N-like ions can be used to measure the temperature and density of various types of astrophysical plasmas. The atomic databases of astrophysical plasma modelling codes still have room for improvement in their electron-impact excitation data sets for N-like ions, especially for R-matrix data. This is particularly relevant for future observatories (e.g. Arcus), which will host high-resolution spectrometers. Aims. We aim to obtain level-resolved effective collision strengths for all transitions up to nl = 5d over a wide range of temperatures for N-like ions from O II to Zn XXIV (i.e. O+ to Zn23+) and to assess the accuracy of the present work. We also examine the impact of our new data on plasma diagnostics by modelling solar observations with CHIANTI. Methods. We carried out systematic R-matrix calculations for N-like ions, which included 725 fine-structure target levels in both the configuration interaction target and close-coupling collision expansions. The R-matrix intermediate coupling frame transformation method was used to calculate the collision strengths, while the AUTOSTRUCTURE code was used for the atomic structures. Results. We compare the present results for selected ions with those in archival databases and the literature. The comparison covers energy levels, oscillator strengths, and effective collision strengths. We show examples of improved plasma diagnostics when compared to CHIANTI models, which use only distorted wave data as well as some using previous R-matrix data. The electron-impact excitation data are archived according to the Atomic Data and Analysis Structure (ADAS) data class adf04 and will be available in OPEN-ADAS. The data can be used to improve the atomic databases for astrophysical plasma diagnostics.

Multi-layer contacts for organic light-emitting diodes with enhanced injection efficiency

2001 ◽  
Vol 708 ◽  
Author(s):  
Ludmila Bakueva ◽  
Sergei Musikhin ◽  
Edward H. Sargent ◽  
Alexander Shik
Keyword(s):  
Dielectric Layer ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Hot Electron ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Organic Light ◽  
Base Electrode ◽  
Wide Range

ABSTRACTA low level of electron injection is one of the major obstacles to achieving high-efficiency organic light-emitting diodes. With the goal of improving injection characteristics, we fabricated and investigated herein multi-layer contacts which included a tunnel-transparent dielectric layer of nanometer thickness. Polymer layers were prepared by the spin-coating method and dielectric and metallic contact layers grown by vacuum deposition. The voltage drop at this layer shifts the metal Fermi level relative to the polymer molecular orbitals responsible for the carrier transport, increasing the injection efficiency. The introduction of a suitably chosen dielectric layer results in an increase in the injection efficiency by up to a factor of several tens.Further sophistication of the injecting contacts consists in creating and additional intermediate thin metallic layer playing the role of the third, base electrode, similar to hot-electron transistors with metallic base. Additional bias applied to the base electrode permits variable injection efficiency and quantum yield over a wide range.

Electron-impact excitation cross-section measurements at EBITs from 1986 to 2006

2008 ◽  
Vol 86 (1) ◽  
pp. 55-71 ◽  
Author(s):  
H Chen ◽  
P Beiersdorfer
Keyword(s):  
Electron Impact ◽  
Cross Section ◽  
Cross Sections ◽  
Ion Trap ◽  
Spectroscopic Properties ◽  
Highly Charged Ions ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Wide Range ◽  
Charged Ions

This paper reviews the electron-impact excitation (EIE) measurements at electron beam ion trap (EBIT) facilities in the last 20~years. EIE cross sections are important atomic parameters fundamental to understanding the spectroscopic properties of ions. The properties of an EBIT make it an ideal device to measure the EIE cross section of highly charged ions. As a matter of fact, a report of EIE measurement was among the first papers published on the first EBIT ever built, EBIT-I. Since then, a wide range of measurements have been performed for K-shell and L-shell highly charged ions of Ti, V, Cr, Mn, Fe, Xe, and Ba using a combination of crystal spectrometers and solid-state X-ray detectors. In the last few years, the measurements were extended to all strong Fe L-shell lines by using a 6 × 6 pixel array microcalorimeter.PACS Nos.: 32.30.Jc, 32.30.Rj, 34.50.Fa, 32.70.Cs

MOS Light Emitting Devices Based on Rare-Earth Ion Implantation

2008 ◽  
Vol 590 ◽  
pp. 117-138 ◽  
Author(s):  
L. Rebohle ◽  
Wolfgang Skorupa
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Power Efficiency ◽  
Light Emission ◽  
Rare Earth Ions ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Hot Electron ◽  
Rare Earth Ion

In this article we will give an overview of our work devoted to Si-based light emission which was done in the last years. Si-based light emitters were fabricated by ion implantation of rare earth elements into the oxide layer of a conventional MOS structure. Efficient electroluminescence was obtained for the wavelength range from UV to the visible by using a transparent top electrode made of indium-tin oxide. In the case of Tb-implantation the best devices reach an external quantum efficiency of 16 % which corresponds to a power efficiency in the order of 0.3 %. The properties of the microstructure, the IV characteristics and the electroluminescence spectra were evaluated. The electroluminescence was found to be caused by hot electron impact excitation of rare earth ions, and the electric phenomena of charge transport, luminescence centre excitation, quenching and degradation are explained in detail.

The Doping and Characterization of Erbium-Implanted Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
J. T. Torvik ◽  
R. J. Feuerstein ◽  
C. H. Qiu ◽  
J. I. Pankove ◽  
F. Namavar
Keyword(s):  
Room Temperature ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Device Performance ◽  
Hot Electron ◽  
Electron Hole ◽  
Excitation Process ◽  
Electron Hole Pair ◽  
Single Exponential

AbstractStrong room temperature Er-related photoluminescence (PL) and electroluminescence (EL) at 1539 nm was observed from Er and 0 implanted n-type GaN. Good device performance requires that the Er-related excitation and emission processes be efficient. Single exponential PL and EL time decays with l/e lifetimes of 2.33 ms and 1.74 ms indicates highly efficient radiative process. The Er excitation process in GaN was studied by comparing the efficiency of direct Erabsorption, electron-hole pair recombination, and hot electron (impact) excitation. The strongest Er luminescence and the lowest pump power was found using impact excitation.

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