A Thin-Film Silicon Solar Cell: Design and Processing Approach

1997 ◽  
Vol 485 ◽  
Author(s):  
Bhushan L. Sopori ◽  
Wei Chen ◽  
Jamal Madjdpour ◽  
Marta Symko
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Cell Structure ◽  
Back Surface ◽  
Device Structure ◽  
New Device ◽  
Thin Film Silicon ◽  
A Cell

AbstractWe present a new device structure for a high efficiency, thin-film, silicon solar cell. A preliminary design and an approach for fabrication of such a cell are discussed. The cell structure uses interface texturing and a back surface reflector for effective light trapping. A theoretical analysis is applied to determine the major parameters of the cell. These analyses indicate that a cell efficiency of about 18% is attainable with a Si film thickness of 10–15 μm, and grain size of about 50 μm. A method for making a large-grain thin cell is proposed.

A Study of Back Electrode Stacked With Low Cost Reflective Layers For High-Efficiency Thin-Film Silicon Solar Cell

2014 ◽  
Vol 136 (3) ◽  
Author(s):  
Tsung-Wei Chang ◽  
Chao-Te Liu ◽  
Wen-Hsi Lee ◽  
Yu-Jen Hsiao
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
High Performance ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Visible Region ◽  
Particle Diameter ◽  
Solid Content ◽  
Thin Film Silicon

In this study, commercially available white paint is used as a pigmented dielectric reflector (PDR) in the fabrication of a low-cost back electrode stack with an Al-doped ZnO (AZO) layer for thin-film silicon solar cell applications. An initial AZO film was deposited by the radio-frequency magnetron sputtering method. In order to obtain the highest transmittance and lowest resistivity of AZO film, process parameters such as sputtering power and substrate temperature were investigated. The optimal 100-nm-thick AZO film with low resistivity and high transmittance in the visible region are 6.4 × 10−3 Ω·cm and above 80%, respectively. Using glue-like white paint doped withTiO2 nanoparticles as the PDR enhances the external quantum efficiency (EQE) of a microcrystalline silicon absorptive layer owing to the doped white particles improving Fabry–Pérot interference (FPI), which raises reflectance and scattering ability. To realize the cost down requirement, decreasing the noble metal film thickness such as a 30-nm-thick silver reflector film, and a small doping particle diameter (D50 = 135 nm) and a high solid content (20%) lead to FPI improvement and a great EQE, which is attributed to improved scattering and reflectivity because of optimum diameter (Dopt) and thicker PDR film. The results indicate that white paint can be used as a reflector coating in low-cost back-electrode structures in high-performance electronics.

scholarly journals Simulating the performance of a highly efficient CuBi2O4-based thin-film solar cell

2021 ◽  
Vol 3 (5) ◽  
Author(s):  
Adnan Hosen ◽  
Md. Suruz Mian ◽  
Sheikh Rashel Al Ahmed
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Current Density ◽  
High Efficiency ◽  
Defect Density ◽  
Cell Structure ◽  
Short Circuit ◽  
Open Circuit ◽  
Absorber Layer ◽  
Device Structure

AbstractIn this study, copper bismuth oxide (CuBi2O4) absorber-based thin film heterojunction solar cell structure consisting of Al/FTO/CdS/CuBi2O4/Ni has been proposed. The proposed solar cell device structure has been modeled and analyzed by using the solar cell capacitance simulator in one dimension (SCAPS-1D) software program. The performance of the proposed photovoltaic device is evaluated numerically by varying thickness, doping concentrations, defect density, operating temperature, back metal contact work function, series and shunt resistances. The current density–voltage behaviors at dark and under illumination are investigated. To realize the high efficiency CuBi2O4-based solar cell, the thickness, acceptor and donor densities, defect densities of different layers have been optimized. The present work reveals that the power conversion efficiency can be enhanced by increasing the absorber layer thickness. The efficiency of 26.0% with open-circuit voltage of 0.97 V, short-circuit current density of 31.61 mA/cm2, and fill-factor of 84.58% is achieved for the proposed solar cell at the optimum 2.0-μm-thick CuBi2O4 absorber layer. It is suggested that the p-type CuBi2O4 material proposed in the present study can be employed as a promising absorber layer for applications in the low cost and high efficiency thin-film solar cells.

A high efficiency thin film silicon solar cell and module

Solar Energy ◽  
2004 ◽  
Vol 77 (6) ◽  
pp. 939-949 ◽  
Author(s):  
Kenji Yamamoto ◽  
Akihiko Nakajima ◽  
Masashi Yoshimi ◽  
Toru Sawada ◽  
Susumu Fukuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Thin Film Silicon

Single to multi-scale texturing for high efficiency micromorph thin film silicon solar cell

2011 ◽  
Author(s):  
Mathieu Boccard ◽  
Peter Cuony ◽  
Corsin Battaglia ◽  
Simon Hanni ◽  
Sylvain Nicolay ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Multi Scale ◽  
Thin Film Silicon

Case study of failure analysis in thin film silicon solar cell

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1800-1803 ◽  
Author(s):  
D. Mello ◽  
R. Ricciari ◽  
A. Battaglia ◽  
M. Foti ◽  
C. Gerardi
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Failure Analysis ◽  
Silicon Solar Cell ◽  
Thin Film Silicon
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