The Burstein-Moss Shift in Quantum Dots of III-V, II-VI and IV-VI Semiconductors Under Parallel Magnetic Field

1997 ◽  
Vol 484 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
P. K. Bose ◽  
Gautam Majumder
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Film Thickness ◽  
Parallel Magnetic Field ◽  
Theoretical Results

AbstractIn this paper, we have investigated the Burstein-Moss shift(BMS) in QDs of III-V, II-VI and IV-VI semiconductors in the presence of a parallel magnetic field on the basis of newly formulated carrier disperson laws. It is found, taking QDs of InSb, Cds and CdTe as examples that the BMS increases with increasing doping and decreasing film thickness in ladder like manners. The numerical values of the BMS in QDs are much greater than that of their corresponding values for bulk specimens. The theoretical results as presented here are in agreement with the experimental observations as reported in literature.

Thermoelectric Power in Quantum Confined Bismuth Under Classically Large Magnetic Field

1990 ◽  
Vol 216 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Well ◽  
Film Thickness ◽  
Quantum Wells ◽  
Thermoelectric Power ◽  
Large Magnetic Field ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

ABSTRACTIn this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

On the Thermoelectric Power in Quantum Dots of Non-Parabolic Semiconductors in Thr Presence of a Classically Large Field

1990 ◽  
Vol 198 ◽  
Author(s):  
Ktamkahya P. Ghatak ◽  
B. De ◽  
M. Mondal ◽  
S.N. Biswas
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Film Thickness ◽  
Thermoelectric Power ◽  
Experimental Observation ◽  
Electron Concentration ◽  
Large Field ◽  
Large Magnetic Field ◽  
Theoretical Results

ABSTRACTWe have studied the thermoelectric power in quantum dots (QDs) of non-parabolic semiconductors in the presence of a classically large magnetic field and we have taken A3N B2V, ternary chalcopyrite, II-VI and III-V semiconductors. It is found that the thermopower increases with increasing film thickness and decreasing electron concentration respectively in all the cases. The numerical values are greatest for Cd3As2 and least for InAs and the theoretical results are in ageement with the experimental observation as reported elsewhere.

Thermoelectric Power in Quantum Confined Optoelectronic Materials under Classically Large Magnetic Field

1990 ◽  
Vol 181 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. De ◽  
M. Mondal ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Wells ◽  
Thermoelectric Power ◽  
Optoelectronic Materials ◽  
Large Magnetic Field ◽  
Dispersion Law ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

ABSTRACTWe shall study the thermoelectric power under classically large magnetic field (TPM) in optoelectronic materials of quantum wells (QWs), quantum well wires (QWW’s), quantum dots (QDs) and compare the same with the hulk specimens of optoelectronic materials by formulating the respective electron dispersion law. The TPM increases with decreasing electron concentration in an oscillatory manner in all the cases, taking n-Hg1-xC dxTe as an example. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

MAGNETORESISTANCE OF A SILICON MOSFET ON THE (111) SURFACE IN A PARALLEL MAGNETIC FIELD

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1529-1534 ◽  
Author(s):  
A. GOLD ◽  
O. ANTONIE
Keyword(s):  
Magnetic Field ◽  
Electron Gas ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Zero Temperature ◽  
Parallel Magnetic Field ◽  
Interface Roughness Scattering ◽  
Dimensional Electron Gas ◽  
Passivated Silicon ◽  
Theoretical Results

In comparison with silicon (100) we argue that the silicon (111) surface is a surface with higher mobility and stronger Coulomb interaction effects. For the resistance of the two-dimensional electron gas we discuss the effects of a magnetic field parallel to the surface: for zero temperature we present theoretical results for the magnetoresistance of an electron gas at the surface of silicon (111) with a six-fold valley degeneracy. Impurity scattering and interface roughness scattering are taken into account. A recent study of a hydrogen-passivated silicon (111) surface showed a mobility proportional to the electron density. We present, using a model for neutral impurities, predictions for the magnetoresistance of this sample in a parallel magnetic field.

Influence of Quantum Confinement on the Photoemission From Nonlinear Optical Materials

1997 ◽  
Vol 484 ◽  
Author(s):  
Amakhya P. Ghatak ◽  
P. K. Bose ◽  
Gautam Majumder
Keyword(s):  
Quantum Dots ◽  
Film Thickness ◽  
Quantum Confinement ◽  
Optical Materials ◽  
Nonlinear Optical ◽  
Nonlinear Optical Materials ◽  
Dispersion Law ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

Abstractwells (QWs), quantum well wires (QWWs) and quantum dots (QDs) of nonlinear optical materials, respectively on the basis of a newly derived electron dispersion law considering all types of anisotropies within the framework of k.p. formalism. It is found, taking CdGeAs2, GaAs and InAs, as exmaples, that the photoemission increase with increasing photon energy in a ladder like manner and also exhibits oscillatory dependences with changing electron concentration with film thickness respectively for all types of quantum confinement. The photoemission current density is greatest in QDs and least in QWWs. In addition, the theoretical results are in agreement with the experimental observation as reported elsewhere.

On thon the Photoemission from Quantum Confined Strained III–V Systems

1995 ◽  
Vol 379 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. Nag ◽  
G. Mazumder
Keyword(s):  
Quantum Dots ◽  
Film Thickness ◽  
Quantum Wells ◽  
Electron Concentration ◽  
Quantum Confinement ◽  
Dispersion Law ◽  
Quantum Confined ◽  
Electron Dispersion ◽  
Lattice Matched ◽  
Theoretical Results

ABSTRACTIn this paper we have studied the photoemission from quantum wells (QW), quantum wells wires (QWWs) and quantum dots (QDs) of quantum confined strained III–V compounds on the basis of a newly formulated electron dispersion law. It is found taking such quantum confined Hg1–xCdxTe and In1–xGaxAsyP1–y lattice matched InP as examples that the photoemission increases with increasing energy of the incident photons in a ladder like manner and also exhibits oscillatory dependences with changing electron concentration and film thickness respectively for all types quantum confinement. The photoemitted current is greatest in strained QDs and least in unstrained QWs. In addition the theoretical results are in agreement with the experimental datas as given elsewhere.

On The Photoemission From Quantum Confined Compound Semiconductors

1991 ◽  
Vol 228 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. De
Keyword(s):  
Quantum Dots ◽  
Film Thickness ◽  
Quantum Wells ◽  
Electron Concentration ◽  
Quantum Confinement ◽  
Compound Semiconductors ◽  
Dispersion Law ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

ABSTRACTIn this paper, we have studied the photoemission from quantum wells (QWs), quantum well wires (QWWs) and quantum dots (QDs) of degenerate Kane-type semiconductors, on the basis of a newly derived electron dispersion law considering all types of anisotropies within the framework of k.p formalism. It is found, taking n-Cd3 As2 as an example, that the photoemission increases with increasing photon energy in a ladder-like manner and also exhibits oscillatory dependences with changing electron concentration and with film thickness, for all types of quantum confinement. The photoemission current density is greatest in QDs and least in QWWs. In addition, the theoretical results are in agreement with the experimental observation as reported elsewhere.

Parallel magnetic-field-induced conductance fluctuations in one- and two-subband ballistic quantum dots

2003 ◽  
Vol 68 (24) ◽  
Author(s):  
C. Gustin ◽  
S. Faniel ◽  
B. Hackens ◽  
S. Melinte ◽  
M. Shayegan ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Parallel Magnetic Field ◽  
Conductance Fluctuations
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